Highly Efficient Nondoped Blue Organic Light-emitting Diode Using MoO3 as Anode Buffer Layer

NI Wei-de; WU You-zhi; ZHANG Wen-lin; ZHANG Cai-rong; ZHANG Ding-jun

doi:null

您当前的位置：

首页 >

文章列表页 >

Highly Efficient Nondoped Blue Organic Light-emitting Diode Using MoO₃ as Anode Buffer Layer

paper | 更新时间：2020-08-12

- Highly Efficient Nondoped Blue Organic Light-emitting Diode Using MoO₃ as Anode Buffer Layer
- Chinese Journal of Luminescence Vol. 32, Issue 12, Pages: 1271-1275(2011)
- 作者机构：
  
  1. 甘肃省有色金属新材料省部共建国家重点实验室, 兰州理工大学材料科学与工程学院,甘肃兰州,730050
  2. 兰州理工大学理学院应用物理系,甘肃兰州,730050
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN383.1
- Received：01 September 2011，
  
  Revised：12 October 2011，
  
  Published Online：22 December 2011，
  
  Published：22 December 2011
- 稿件说明：
移动端阅览
倪蔚德, 吴有智, 张文林, 张材荣, 张定军. MoO3为缓冲层的高效非掺杂蓝色有机发光二极管[J]. 发光学报, 2011,32(12): 1271-1275

NI Wei-de, WU You-zhi, ZHANG Wen-lin, ZHANG Cai-rong, ZHANG Ding-jun. Highly Efficient Nondoped Blue Organic Light-emitting Diode Using MoO3 as Anode Buffer Layer[J]. Chinese Journal of Luminescence, 2011,32(12): 1271-1275
倪蔚德, 吴有智, 张文林, 张材荣, 张定军. MoO3为缓冲层的高效非掺杂蓝色有机发光二极管[J]. 发光学报, 2011,32(12): 1271-1275 DOI：

NI Wei-de, WU You-zhi, ZHANG Wen-lin, ZHANG Cai-rong, ZHANG Ding-jun. Highly Efficient Nondoped Blue Organic Light-emitting Diode Using MoO3 as Anode Buffer Layer[J]. Chinese Journal of Luminescence, 2011,32(12): 1271-1275 DOI：

摘要

以典型蓝色发光材料-联苯乙烯衍生物(4

4'-bis(2

2'-diphenylvinyl)- 1

1'-biphenyl

DPVBi)为发光层

采用MoO

为阳极缓冲层制备了结构简单的非掺杂型蓝色有机电致发光器件。在电流密度为20 mA/cm

、 MoO

缓冲层厚度为0.5 nm对器件效率约为无缓冲层器件效率的18倍

为通常酞菁铜(Copper phthalocyanine

CuPc)缓冲层器件效率的1.2倍。器件启亮电压为3.3 V

最高外量子效率为3.1％

最高亮度达到16 000 cd/m

器件CIE色坐标(Commission Internationale de l'Eclairage co-ordinates)为(0.15

0.15)。器件性能的提升归因于MoO

缓冲层的插入在阳极/有机层间形成了良好的欧姆接触。

Abstract

Contact properties between electrodes and organic layers play a key role for the performance of an organic device. Ohmic contacts at electrode/organic interfaces are required for an ideal device. In order to improve performance of 4

4'-bis(2

2'-diphenylvinyl)-1

1'-biphenyl (DPVBi

a typical blue organic luminescent material) based organic light-emitting diode

MoO

was introduced at anode interface as a buffer layer and a highly efficient bright nondoped blue electroluminescent device with low driving voltage was fabricated. Luminescent efficiency of the device with a 0.5-nm-thick MoO

buffer layer is 18 times higher than that of the device without buffer layer

and 1.2 times higher than that of the device with a conventional copper phthalocyanine (CuPc) buffer layer at a current density of 20 mA/cm

. Turn-on voltage

maximum external quantum efficiency and luminance of the device are 3.3 V

3.1% and 16000 cd/m

respectively. Commission Internationale de l'Eclairage (CIE) co-ordinates are (0.15

0.15). Realization of excellent device performance is attributed to formation of ohmic contact between anode and organics by insertion of MoO

关键词

Keywords

references

Hung L S, Tang C W, Mason M G. Enhanced electron injection in organic electroluminescent devices using an Al/LiF electrode [J]. Appl. Phys. Lett., 1997, 70 (2):152-154.[2] Brown T M, Friend R H, Millard I S, et al. Electronic line-up in light-emitting diodes with alkali-halide/metal cathodes [J]. J. Appl. Phys., 2003, 93 (10):6159-6172.[3] VanSlyke S A, Chen C H, Tang C W. Organic electroluminescent devices with improved stability [J]. Appl. Phys. Lett., 1996, 69 (15):2160-2162.[4] Elschner A, Bruder F, Heuer H W, et al. PEDT/PSS for efficient hole-injection in hybrid organic light-emitting diodes [J]. Synth. Met., 2000, 111-112 (1):139-143.[5] Liao Y Q, Gan Z H, Liu X Y. Highly efficient blue phosphorescent organic light emitting devices with SrF2 doped hole transporting layer [J]. Chin. J. Lumin.(发光学报), 2011, 32 (8):803-808 (in Chinese).[6] Huang J S, Pfeiffer M, Werner Blochwitz-Nimoth J, et al. Low-voltage organic electroluminescent devices using pin structures [J]. Appl. Phys. Lett., 2002, 80 (1):139-141.[7] D'Anderade B W, Forrest S R, Chwang A B. Operational stability of electrophosphorescent devices containing p and n doped transport layers [J]. Appl. Phys. Lett., 2003, 83 (19):3858-3860.[8] Zhang H M, Dai Y F, Ma D G, et al. High efficiency tandem organic light-emitting devices with Al/WO3/Au interconnecting layer [J]. Appl. Phys. Lett., 2007, 91 (12):123504-1-3.[9] Cao J, Jiang X Y, Zhang Z L. MoOx modified Ag anode for top-emitting organic light-emitting devices [J]. Appl. Phys. Lett., 2006, 89 (25):252108-1-3.[10] Wu Y Z, Zheng X Y, Sun R G, et al. Highly efficient distyrylarylene (DSA) derivative blue organic electroluminescent device with improved color purity [J]. Acta Optica Sinica(光学学报), 2004, 24 (8):1120-1125 (in Chinese).[11] Hosokawa C, Higashi H, and Nakamura H, et al. Highly efficient blue electroluminescence from distyrylarylene emitting layer with a new dopant [J]. Appl. Phys. Lett., 1995, 67 (26):3853-3855.[12] Zhang Y, Li Y, Duan L, et al. Efficient organic light-emitting diode using lithium tetra-(8-hydroxy-quinolinato) boron as the electron injection layer [J]. Acta Phys. Chim. Sin. (物理化学学报), 2007, 23 (4):455-458 (in Chinese).[13] Hou Y B, Yang X H, Li Y B, et al. Electric field induced quenching of photoluminescence of poly(N-vinylarbaole) (PVK) doped with dyes [J]. Thin Solid Films, 2000, 363 (1-2):248-251.[14] Stampor W, Kalinowski J, Di P, et al. Electric field effect on luminescence efficiency in 8-hydroxyquinoline aluminum (Alq3) thin films [J]. Appl. Phys. Lett., 1997, 70 (15):1935-1937.[15] Matsushima T, Kinoshita Y and Murata H. Formation of Ohmic hole injection by inserting an ultrathin layer of molybdenum trioxide between indium tin oxide and organic hole-transporting layers [J]. Appl. Phys. Lett., 2007, 91 (25):253504-253506.

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Electroplex in Organic Light-emitting Diodes

Modification Effect of NPB Film Thickness on Charge Carrier Recombination Zone of Heterostructure OLEDs

Efficiency Improvement of Organic Electroluminescent Devices by Using Liq as an Electron Injection Layer

Related Author

CHEN Hong

GAO Jie

FAN Yi

TIAN Miao-miao

LI Lu

JIANG Ya-dong

LI Wei

LI Wei-zhi

Related Institution

Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences

Graduate School of Chinese Academy of Sciences

School of Optoelectronic Information, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China (UESTC)

School of Material Science and Engineering, Shanghai University

R & D Center for OLED, Shanghai University

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰