Dry Etching of InP Material Based on Inductivity Coupled Plasma

WANG Qi; ZHANG Jin-long; WANG Li-jun; LIU Yun

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Dry Etching of InP Material Based on Inductivity Coupled Plasma

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- Dry Etching of InP Material Based on Inductivity Coupled Plasma
- Chinese Journal of Luminescence Vol. 32, Issue 12, Pages: 1276-1280(2011)
- 作者机构：
  
  1. 中国科学院激发态重点实验室长春光学精密机械与物理研究所,吉林长春,130033
  2. 中国科学院研究生院北京,100039
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN248.4
- Received：24 July 2011，
  
  Revised：21 September 2011，
  
  Published Online：22 December 2011，
  
  Published：22 December 2011
- 稿件说明：
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王琪, 张金龙, 王立军, 刘云. 基于电感耦合等离子体的InP基半导体材料干法刻蚀的研究[J]. 发光学报, 2011,32(12): 1276-1280

WANG Qi, ZHANG Jin-long, WANG Li-jun, LIU Yun. Dry Etching of InP Material Based on Inductivity Coupled Plasma[J]. Chinese Journal of Luminescence, 2011,32(12): 1276-1280
王琪, 张金龙, 王立军, 刘云. 基于电感耦合等离子体的InP基半导体材料干法刻蚀的研究[J]. 发光学报, 2011,32(12): 1276-1280 DOI：

WANG Qi, ZHANG Jin-long, WANG Li-jun, LIU Yun. Dry Etching of InP Material Based on Inductivity Coupled Plasma[J]. Chinese Journal of Luminescence, 2011,32(12): 1276-1280 DOI：

摘要

研究了基于电感耦合等离子体(ICP)刻蚀系统的InP基半导体材料的干法刻蚀。采用Cl

/Ar/H

混合刻蚀气体

分别研究了氯气体积分数和ICP功率与刻蚀速率之间的关系

及镍、二氧化硅和二者结合型掩膜版的适用范围。获得有效的刻蚀速率为450～1200 nm/min

InP对金属镍的选择性刻蚀比值为175～190。掩膜版的选择与制备方法适用于基于ICP系统的任何半导体材料的干法刻蚀工艺。

Abstract

Dry etching of InP material based on inductivity coupled plasma(ICP) was thoroughly studied

/Ar/H

gas mixture was adopted

and the etching depth could reach 10 m with a vertical and a smooth surface. The gas percentages of the total gas versus etching rate

and the applicable regions of Ni

SiO

and the combination of Ni and SiO

were studied

respectively. The regions of the effective etching rate and selectivity against Ni are 450~1200 nm/min and 175~190

respectively. The choosing and fabrication approaches adopted are highly suitable for any semiconductor material based on ICP system.

关键词

Keywords

references

Zhao W, Bae J W, Adesida I, et al. Effect of mask thickness on the nanoscale sidewall roughness and optical scattering losses of deep-etched InP/InGaAsP high mesa waveguides [J]. J. Vac. Sci. Technol. B, 2005, 23 (5):2041-2045.[2] Sun C Z, Zhou Q W, Xiong B, et al. Vertical and smooth etching of InP by Cl2/Ar/CH4 inductively coupled plasma at room temperature [J]. Chin. Phys. Lett., 2003, 20 (8):1312-1314.[3] Park S, Kim S S, Wan L W, et al. InGaAsP-InP nanoscale waveguide-coupled microring lasers with submilliampere threshold current using Cl2/N2-based high-density plasma etching [J]. IEEE J. Quantm. Electron., 2005, 41 (3):351-356.[4] Adesida I, Nummila K, Andideh E, et al. Nanostructure fabrication in InP and related compounds [J]. J. Vac. Sci. Technol. B, 2002, 8 (6):1357-1360.[5] Hahn Y B, Hays D C, Cho H, et al. Effect of inert gas additive species on Cl2 high density plasma etching of compound semiconductors Part Ⅱ. InP, InSb, InGaP and InGaAs [J]. Appl. Surf. Sci., 1999, 144 (1-4):215-221.[6] MatsutanA I, Ohtsuki H, Koyama F, et al. Vertical and smooth etching of InP by Cl2/Xe inductively coupled plasma [J]. 1999, 38 (7A):4260-4261.[7] Rommel S L , Jang J H, Lu W, et al. Effect of H2 on the etch profile of InP/InGaAsP alloys in Cl2/Ar/H2 inductively coupled plasma reactive ion etching chemistries for photonic device fabrication [J]. J. Vac. Sci. Technol. B, 2002, 20 (4):1327-1330.[8] Jang J H, Zhao W, Bae J W , et al. Study of the evolution of nanoscale roughness from the line edge of exposed resist to the sidewall of deep-etched InP/InGaAsP heterostructures [J]. J. Vac. Sci. Technol. B, 2004, 22 (5):2538-2541.[9] Jang J H, Zhao W, Bae J W, et al., Direct measurement of nanoscale sidewall roughness of optical waveguides using an atomic force microscope [J]. Appl. Phys. Lett., 2003, 83 (20):4116-4118.[10] Lee C W, Nie D, Mei T, et al. Study and optimization of room temperature inductively coupled plasma etching of InP using Cl2/CH4/H2 and CH4/H2 [J]. J. Cry. Grow., 2006, 288 (1):213-216.[11] Gmachl C, Capasso F, Sivco D, et al. Recent progress in quantum cascade lasers and applications [J]. Rep. Prog. Phys., 2001, 64 (11):1553-1601.

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