Luminescent Performances of Green InGaN/GaN MQW LED Employing Superlattices Strain Adjusting Structures

WANG Xiao-li; WANG Wen-xin; JIANG Yang; MA Zi-guang; CUI Yan-xiang; JIA Hai-qiang; SONG Jing; CHEN Hong

doi:null

您当前的位置：

首页 >

文章列表页 >

Luminescent Performances of Green InGaN/GaN MQW LED Employing Superlattices Strain Adjusting Structures

paper | 更新时间：2020-08-12

- Luminescent Performances of Green InGaN/GaN MQW LED Employing Superlattices Strain Adjusting Structures
- Chinese Journal of Luminescence Vol. 32, Issue 11, Pages: 1152-1158(2011)
- 作者机构：
  
  1. 中国科学院物理研究所清洁能源前沿研究重点实验室北京,100190
  2. 天津中环新光科技有限公司天津,300385
- 作者简介：
- 基金信息：
  
  973"
- DOI：
  CLC： O482.31
- Received：19 May 2011，
  
  Revised：2011-6-30，
  
  Published Online：22 November 2011，
  
  Published：22 November 2011
- 稿件说明：
移动端阅览
王小丽, 王文新, 江洋, 马紫光, 崔彦翔, 贾海强, 宋京, 陈弘. 具有超晶格应力调制结构的绿光InGaN/GaN多量子阱的发光特性[J]. 发光学报, 2011,32(11): 1152-1158

WANG Xiao-li, WANG Wen-xin, JIANG Yang, MA Zi-guang, CUI Yan-xiang, JIA Hai-qiang, SONG Jing, CHEN Hong. Luminescent Performances of Green InGaN/GaN MQW LED Employing Superlattices Strain Adjusting Structures[J]. Chinese Journal of Luminescence, 2011,32(11): 1152-1158
王小丽, 王文新, 江洋, 马紫光, 崔彦翔, 贾海强, 宋京, 陈弘. 具有超晶格应力调制结构的绿光InGaN/GaN多量子阱的发光特性[J]. 发光学报, 2011,32(11): 1152-1158 DOI：

WANG Xiao-li, WANG Wen-xin, JIANG Yang, MA Zi-guang, CUI Yan-xiang, JIA Hai-qiang, SONG Jing, CHEN Hong. Luminescent Performances of Green InGaN/GaN MQW LED Employing Superlattices Strain Adjusting Structures[J]. Chinese Journal of Luminescence, 2011,32(11): 1152-1158 DOI：

摘要

研究了具有InGaN/GaN超晶格(SL)插入结构的绿光InGaN/GaN多量子阱(MQW)的发光特性。结构测试表明

SL插入结构并没有引起MQW中平均In组份的增加

而是改变了In组份的分布

形成了高In组份的量子点和低In组份量子阱。其电致发光(EL)谱和光致发光(PL)谱均出现了双发光峰。我们认为这两个峰分别来自于量子点和量子阱

且存在着载流子从阱向点转移的输运机制。最后变温PL积分强度的Arrhenius 拟合表明

SL插入结构并没有在MQW中引入新的缺陷

使其发光效率下降。

Abstract

Green InGaN/GaN multiple quantum well(MQW) LEDs employing InGaN/GaN superlattice(SL) structure were studied. The distribution of indium within the MQWs is changed by inserting the InGaN/GaN SL. Meanwhile

the average indium content of MQW does not change. Two InGaN-related peaks that were clearly found in the electroluminescence(EL) and photoluminescence(PL) spectrum

which are assigned to In-rich quantum dots(QD) and the InGaN matrix

respectively. It is suggested that the carrier drifts from the InGaN matrix to the In-rich QD. It could be concluded that employing SL structures is an effective way to adjust the wavelength of InGaN/GaN MQW without introducing new defects in the MQWs.

关键词

Keywords

references

Nakamura S, Mukai T, Senoh M. Candela-class high-brightness InGaN/AlGaN double-heterostructure blue light-emitting diodes [J]. Appl. Phys. Lett., 1994, 64 (13):1687-1689.[2] Nakamura S. The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes [J]. Science, 1998, 281 (5379):956-961.[3] Viswanath A K, Lee J I, Kim S T, et al. Growth of good quality InGaN multiple quantum wells by MOCVD [J]. Journal of Crystal Growth, 2004, 260 (3-4):322-326.[4] Lu Huimin, Chen Genxiang. Influence of polarization effect on optoelectronic properties of InGaN/GaN multiple quantum well [J]. Chin. J. Lumin.(发光学报), 2011, 32 (3):266-271 (in Chinese).[5] Miller D A B, Chemla D S, Damen T C, et al. Band-edge electroabsorption in quantum well structures:The quantum-confined stark effect [J]. Phys. Rev. Lett., 1984, 53 (22):2173-2176.[6] Miller D A B, Chemla D S, Damen T C, et al. Electric field dependence of optical absorption near the band gap of quantum-well structures [J]. Phys. Rev. B, 1985, 32 (2):1043-1060.[7] Niu Nanhui, Wang Huaibing, Liu Jianping, et al. Enhanced luminescence of InGaN/GaN multiple quantum wells by strain reduction [J]. Solid-State Electronics, 2007, 51 (6):860-864.[8] Lu Chihfeng, Huang Chifeng, Chen Yungsheng, et al. Phosphor-free monolithic white-light LED [J]. IEEE Journal of Selected Topics in Quantum Electronics, 1999, 15 (4):1210-1217.[9] Huang Lirong, Wen Feng, Tong Liangzhu, et al. Wavelength red-shift of long wavelength InGaN/GaN multi-quantum well by using an InGaN underlying layer [J]. Chin. Phys. Lett., 2009, 26 (7):078502-1-4.[10] Xing Bing, Cao Wenyu, Du Weimin. Temperature-dependent PL of InGaN/GaN multiple quantum wells with variable content of In [J]. Chin. J. Lumin.(发光学报), 2010, 31 (6):864-869 (in Chinese).[11] Wang Xiaohui, Jia Haiqiang, Guo Liwei, et al. White light-emitting diodes based on a single InGaN emission layer [J]. Appl. Phys. Lett., 2007, 91 (16):161912-1-3.[12] Fang H, Sang L W, Zhao L B, et al. Luminescent properties in the strain adjusted phosphor-free GaN based white light-emitting diode [J]. Appl. Phys. Lett., 2008, 93 (26):261117-1-3.[13] Xing Yanhui, Deng Jun, Han Jun, et al. Improving the quantum well properties with n-type InGaN/GaN superlattices layer [J]. Acta Physics Sinica (物理学报), 2009, 58 (1):590-595 (in Chinese).[14] Narukawa Y, Kawakami Y, Funato M, et al. Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm [J]. Appl. Phys. Lett., 1997, 70 (8):981-983.[15] Nistor L, Bender H, Vantomme A, et al. Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer [J]. Appl. Phys. Lett., 2000, 77 (4):507-509.[16] Wang T, Nakagawa D, Wang J, et al. Photoluminescence investigation of InGaN/GaN single quantum well and multiple quantum wells [J]. Appl. Phys. Lett., 1998, 73 (24):3571-3573.[17] Eliseev P G, Perlin P, Lee J, et al. "Blue" temperature-induced shift and band-tail emission in InGaN-based light sources [J]. Appl. Phys. Lett., 1997, 71 (5):569-571.[18] Bimberg D, Sondergeld M, Grobe E. Thermal eissociation of excitons bounds to neutral acceptors in high-purity GaAs [J]. Phys. Rev. B, 1971, 4 (10):3451-3455.[19] Gotz W, Johnson N M, Chen C, et al. Activation energies of Si donors in GaN [J]. Appl. Phys. Lett., 1996, 68 (22):3144-3146.[20] Teo K L, Colton J S, Yu P Y, et al. An analysis of temperature dependent photoluminescence line shapes in InGaN [J]. Appl. Phys. Lett., 1998, 73 (12):1697-1699.

Views

562

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Electroluminescence and Photoluminescence of Polyimide Films

Theoretical Investigation on Novel Donor-acceptor Materials with Organic Light-emitting Diodes Based on α-Cinnamoyl Cyclic Ketene Dithioacetals

OPTICAL PROPERTIES OF ZnS：TM(TM=Mn,Cu)NANOPARTICLES

FABRICATION OF MULTIPLE PERIODIC ORGANIC THIN FILMS AND ITS LUMINESCENCE PROPERTIES

ELECTROLUMINESCENT PROPERTIES OF POLY(9-BUTYLFLORENE) POLYMER

Related Author

LI Cai-xia

LIN Jia-qi

NI Hai-fang

WANG Xiao-feng

LI Hui-xue

YUAN Kun

DONG Xiao-ning

LI Xiao-dong

Related Institution

School of Applied Science,Harbin University of Science and Technology

College of Life Science and Chemistry, Tianshui Normal University

State Key Laboratory of Rare Earth Material Chemistry and Applications, Peking University

State Key Laboratory on Integrated Optoelectronics, Jilin University

Key Laboratory of Supermolecular Structure and Spectra, Jilin University

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰