Deposition of AlN Film for AR Coating of Semiconductor Lasers

ZHOU Lu; WANG Yun-hua; JIA Bao-shan; BAI Duan-yuan; ZHANG Si-yu; QIAO Zhong-liang; GAO Xin

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Deposition of AlN Film for AR Coating of Semiconductor Lasers

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- Deposition of AlN Film for AR Coating of Semiconductor Lasers
- Chinese Journal of Luminescence Vol. 32, Issue 12, Pages: 1292-1296(2011)
- 作者机构：
  
  长春理工大学高功率半导体激光国家重点实验室,吉林长春,130022
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN248.4
- Received：03 August 2011，
  
  Revised：2011-10-27，
  
  Published Online：22 December 2011，
  
  Published：22 December 2011
- 稿件说明：
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周路, 王云华, 贾宝山, 白端元, 张斯钰, 乔忠良, 高欣, 薄报学. 半导体激光器腔面增透膜AlN薄膜的制备[J]. 发光学报, 2011,32(12): 1292-1296

ZHOU Lu, WANG Yun-hua, JIA Bao-shan, BAI Duan-yuan, ZHANG Si-yu, QIAO Zhong-liang, GAO Xin, BO Bao-xue. Deposition of AlN Film for AR Coating of Semiconductor Lasers[J]. Chinese Journal of Luminescence, 2011,32(12): 1292-1296
周路, 王云华, 贾宝山, 白端元, 张斯钰, 乔忠良, 高欣, 薄报学. 半导体激光器腔面增透膜AlN薄膜的制备[J]. 发光学报, 2011,32(12): 1292-1296 DOI：

ZHOU Lu, WANG Yun-hua, JIA Bao-shan, BAI Duan-yuan, ZHANG Si-yu, QIAO Zhong-liang, GAO Xin, BO Bao-xue. Deposition of AlN Film for AR Coating of Semiconductor Lasers[J]. Chinese Journal of Luminescence, 2011,32(12): 1292-1296 DOI：

摘要

提出了一种新的半导体激光器增透膜AlN膜

并用matlab软件模拟分析了不同腔面反射率对激光器输出功率的影响

得到激光器最大输出功率时前后腔面的反射率的最佳值。采用反应磁控溅射技术

利用高纯铝靶(99.999％)和N

+Ar的混合气体在K9玻璃基片上沉积了AlN薄膜。利用Filmetrics系统对薄膜进行光学性能测试

分析了不同工艺参数对薄膜沉积速率和折射率的影响。将最优条件下制得的AlN单层增透膜用于半导体激光器上

光学灾变损伤阈值和器件输出功率都得到了很大的提高。

Abstract

The relationship between output power and reflectance of the cavity surface was simulated. Simulation results showed that

when the reflectance of cavity surface coatings took the optimum value

the output power of the semiconductor lasers diode reached the maximum. AlN film were deposited on K9 glass substrates by magnetron sputtering using high-purity Al target and N

+Ar. The influence of sputtering conditions

including working pressure

nitrogen concentration

sputtering power on its deposition rate and optical properties has been studied. The optimized AlN coating was used in semiconductor lasers

we found that the COD threshold and the output power have been greatly improved.

关键词

Keywords

references

Ziegler M, Tomm J W, Reeber D, et al. Catastrophic optical mirror damage in diode lasers monitored during single-pulse operation [J]. Appl.Phys. lett., 2009, 94 (19):191101-1-4.[2] Silfvenius C, Sun Y T, Blixt P, et al. Nitride facet passivation raises reliability, COMD and enables high temperature operation of InGaAs and InAlGaAs lasers [J]. SPIE, 2005, 5711 :189-199.[3] Li Z J, Hu L M,Wang Y, et al. Coating for 808 nm Al-containing semiconductor laser diodes [J]. Optics and precision Engineering (光学精密工程), 2010, 18 (6):1258-1263(in Chinese).[4] Cao X, Luo J S, Chen T S. AlN/GaAs Interface analyses by anger electron spectroscopy and X-ray photoelectron spectroscopy [J]. Chin. J. Semiconductors(半导体学报), 1999, 20 (7):539-542 (in Chinese).[5] Jiang Jianping. Semiconductor Laser [M]. Beijing: Electronic Industry Press, 2001:153-155.[6] Monch W. Growth of AlN on GaAs (110) by reactive molecular beam deposition [J]. Vacuum Science & Technology,1992, 10 (4):1735-1739.[7] Tang Jinfa, Gu peifu, Liu Xu. Morden Optical Film Technology [M]. Hangzhou: Zhejiang University Press, 1983.[8] Zhao S X, Wackelgard E. The optical properities of sputtered composite of Al-AlN [J]. Solar Energy Materials & Solar Cells, 2006, 13 (90):1861-1874[9] Tong H B, Ba D C,Wen L S. Sputtering conditions and optical properties of AlN films [J].Chin. J. Vacuum Science and Technology (真空科学与技术学报), 2007, 27 (4):332-335(in Chinese).

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