Improvement of OLED Performance by Using DPVBi as Hole-blooking Layer

LIAO Ya-qin; GAN Zhi-hong; LIU Xing-yuan

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Improvement of OLED Performance by Using DPVBi as Hole-blooking Layer

paper | 更新时间：2020-08-12

- Improvement of OLED Performance by Using DPVBi as Hole-blooking Layer
- Chinese Journal of Luminescence Vol. 32, Issue 10, Pages: 1041-1045(2011)
- 作者机构：
  
  1. 中国科学院研究生院北京,100049
  2. 中国科学院激发态物理重点实验室长春光学精密机械与物理研究所,吉林长春,130033
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN383.1
- Received：20 March 2011，
  
  Revised：16 June 2011，
  
  Published Online：22 October 2011，
  
  Published：22 October 2011
- 稿件说明：
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廖亚琴, 甘至宏, 刘星元. DPVBi空穴阻挡层对OLED性能的优化[J]. 发光学报, 2011,32(10): 1041-1045

LIAO Ya-qin, GAN Zhi-hong, LIU Xing-yuan. Improvement of OLED Performance by Using DPVBi as Hole-blooking Layer[J]. Chinese Journal of Luminescence, 2011,32(10): 1041-1045
廖亚琴, 甘至宏, 刘星元. DPVBi空穴阻挡层对OLED性能的优化[J]. 发光学报, 2011,32(10): 1041-1045 DOI：

LIAO Ya-qin, GAN Zhi-hong, LIU Xing-yuan. Improvement of OLED Performance by Using DPVBi as Hole-blooking Layer[J]. Chinese Journal of Luminescence, 2011,32(10): 1041-1045 DOI：

摘要

研究了宽带隙有机小分子材料DPVBi作为空穴阻挡层对OLED器件效率和亮度的优化作用。DPVBi的引入有效地改善了以PEDOT∶PSS做空穴注入层的OLED器件的空穴过剩问题。实验结果表明:通过优化DPVBi的厚度

插入30 nm厚的DPVBi空穴阻拦层可以有效地平衡OLED器件的电子和空穴浓度

降低器件的工作电压

优化器件的各项性能。该器件的效率和亮度分别是器件结构为ITO/PEDOT∶PSS/NPB/Alq

/LiF/Al参比器件的1.2倍和1.87倍。

Abstract

High performance organic light emitting devices (OLEDs) should have a low operating voltage

high efficiency and relatively good stability. Inserting of a hole blocking layer (HBL) between hole transporting layer (HTL) and electron transporting layer (ETL) is one of the effective method to improve device performances. In this paper

a DPVBi HBL was incorporated in OLED between the PEDOT∶PSS hole injection layer (HIL) and Alq

ETL. Such a structure helps to reduce the hole-leakage of the cathode

which resulting an enhanced device performances. The optimized device with a thickness of 30 nm DPVBi HBL shows a signi-ficantly improved current efficiency (5.2 cd/A) and luminance (24 350 cd/m

)

which is 20% and 87% higher compared with those data of reference device with the structure of ITO/PEDOT∶PSS/NPB/Alq

/LiF/Al.

关键词

Keywords

references

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