WEN Jing, ZHUANG Wei, WEN Yu-mei, LI Ping, ZHAO Xue-mei, MA Yue-dong. Influence of Optical/Electrical Excitating Style on The Deality Factor of AlGaInP and GaN-based LEDs[J]. Chinese Journal of Luminescence, 2011,32(10): 1057-1063
WEN Jing, ZHUANG Wei, WEN Yu-mei, LI Ping, ZHAO Xue-mei, MA Yue-dong. Influence of Optical/Electrical Excitating Style on The Deality Factor of AlGaInP and GaN-based LEDs[J]. Chinese Journal of Luminescence, 2011,32(10): 1057-1063DOI:
Influence of Optical/Electrical Excitating Style on The Deality Factor of AlGaInP and GaN-based LEDs
The electrical characteristic of AlGaInP and InGaN/GaN-based LEDs were measured and explored under optical and electrical excitation. One of the significant parameter of LED characteristic
n
was mainly taken into consideration under the two varied excitation styles. The results showed that both junction temperature and injecting intensity of carrier influenced
n
. The essential performance of devices was gained within injecting intensity range where the action of space-charge region plays the most important role on current transferring. We found
n
obtained in different motivation conditions
is independent on the excitation ways. Therefore
optical excitation can be applied to take place of electrical excitation for the non-contact detection of
n
in LEDs.
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references
Seo J W, Oh H S, Kwak J S. High-efficiency vertical AlGaInP light-emitting diodes with conductive omni-derectional reflectors [J]. Current Applied Physics, 2011(1):00074-1-14.[2] Yi Juemin, Li Hongbo, Tang Fangqiong, et al. White-lighting LEDs from InGaN blue LEDs and CdTe nanocrystals [J]. Chin. J. Lumin. (发光学报), 2008, 29 (6):1071-1074 (in Chinese).[3] Liu Li, Wu Qing, Huang Xian, et al. Promoting of the phosphor-based white-LED and optical properties [J]. Chin. J. Lumin. (发光学报), 2007, 28 (6):890-894 (in Chinese).[4] Zhu D, Xu J, Noemaun A N, et al. The origin of the high diode-ideality factor in GaInN/GaN multiple quantum well light-emitting diodes [J]. Appl. Phys. Lett., 2009, 94 (8):081113-1-3.[5] Masui H. Diode ideality factor in modern light-emitting diodes [J]. Semicond. Sci. Tech., 2011, 26 (7):075011(1-6).[6] Shah J M, Li Y L, Gessmann Th, et al. Experimental analysis and theoretical model for anomalously high ideality factors (n2) in AlGaN/GaN p-n junction diodes [J]. J. Appl. Phys., 2003, 94 (4):2627-2630.[7] Masui H, Nakamura S, DenBaars S P, et al. Technique to evaluate the diode ideality factor of light-emitting diodes [J]. Appl. Phys. Lett., 2010, 96 (7):073509-1-3.[8] Wei Guohua, Wang Bin, Li Junmei, et al. Temperature dependence of the photoluminescence properties and the research on the mechanism of In0.2Ga0.8As/GaAs single quantum well [J]. Chin. J. Lumin. (发光学报), 2010, 31 (5):619-623 (in Chinese).[9] Wen Jing, Wen Yumei, Li Ping, et al. Domiant factor impacting the photoluminescence and electroluminescence spectra in AlInGaP LEDs [J]. OptoelectronicsLaser (光电子激光), 2010, 21 (5):659-663 (in Chinese).[10] Guo X, Schubert E F. Current crowding in GaN/InGaN light emitting diodes on insulating substrates [J]. J. Appl. Phys., 2001, 90 (8):4190-4195.[11] Neamen D A. Semiconductor Physics and Devices [M]. Boston: McGraw-Hill, 2003:245-254.[12] Acharya Y B. Effect of temperature dependence of band gap and device constant on I-V characteristics of junction diode [J]. Solid State Electronics, 2001, 45 (7):1115-1119.[13] Sah C T, Noyce R N, Shockley W. Carrier generation and recombination in p-n junctions and p-n junction characteristics [J]. Proc. IRE, 1957, 45 :1228-1243.[14] Yan D W, Lu H, Chen D J, et al. Forward tunneling current in GaN-based blue light-emitting diodes [J]. Appl. Phys. Lett., 2010, 96 (8):083504-1-3.[15] Vashni Y P. Temperature dependence of the energy gap in semiconductor [J]. Physical, 1967, 34 (1):149-154.