The Aging Characteristics of High-power GaN-based White Light-emitting Diodes

ZHOU Zhou; FENG Shi-wei; ZHANG Guang-chen; GUO Chun-sheng; LI Jing-wan

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The Aging Characteristics of High-power GaN-based White Light-emitting Diodes

paper | 更新时间：2020-08-12

- The Aging Characteristics of High-power GaN-based White Light-emitting Diodes
- Chinese Journal of Luminescence Vol. 32, Issue 10, Pages: 1046-1050(2011)
- 作者机构：
  
  北京工业大学电子信息与控制工程学院北京,100124
- 作者简介：
- 基金信息：
  
  863"
- DOI：
  CLC： TN383.1
- Received：24 June 2011，
  
  Revised：20 July 2011，
  
  Published Online：22 October 2011，
  
  Published：22 October 2011
- 稿件说明：
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周舟, 冯士维, 张光沉, 郭春生, 李静婉. GaN基大功率白光LED的高温老化特性[J]. 发光学报, 2011,32(10): 1046-1050

ZHOU Zhou, FENG Shi-wei, ZHANG Guang-chen, GUO Chun-sheng, LI Jing-wan. The Aging Characteristics of High-power GaN-based White Light-emitting Diodes[J]. Chinese Journal of Luminescence, 2011,32(10): 1046-1050
周舟, 冯士维, 张光沉, 郭春生, 李静婉. GaN基大功率白光LED的高温老化特性[J]. 发光学报, 2011,32(10): 1046-1050 DOI：

ZHOU Zhou, FENG Shi-wei, ZHANG Guang-chen, GUO Chun-sheng, LI Jing-wan. The Aging Characteristics of High-power GaN-based White Light-emitting Diodes[J]. Chinese Journal of Luminescence, 2011,32(10): 1046-1050 DOI：

摘要

对大功率GaN基白光LED在85 ℃下进行了高温加速老化实验。经6 500 h的老化

样品光通量退化幅度为28%~33%。样品的

I-V

特性变化表明其串联电阻和反向漏电流不断增大

原因可归结为芯片欧姆接触的退化及芯片材料中缺陷密度的提高。样品的热特性变化显示出各结构层热阻均明显增大

这是由散热通道上各层材料的老化及焊料层出现大面积空洞引起的。分析表明

高温老化过程中芯片和封装材料的退化共同导致了LED的缓变失效。

Abstract

Accelerated aging test at the temperature of 85 ℃ were carried out on high-power GaN-based white light-emitting diodes. The degradation of main performance parameters was investigated. After 6 500 h

the luminous flux rate of the samples was declined about 28% to 33%. Series resistance and reverse leakage current increased with the aging time

which were caused by the degradation of ohmic contact and the increase of the defect density

respectively. The thermal resistance components of LEDs increased gradually. Based on the C-SAM measurement

some voids appeared in the die attach. The experiment results suggested that the degradation both in chip and packaging lead to the invalidation devices.

关键词

Keywords

references

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