2 600 W High Efficiency Laser Diode Source with Polarization Coupling

PENG Hang-yu; LIU Yun; SHAN Xiao-nan; ZHANG Jun-long; FU Xi-hong; TONG Cun-zhu

doi:null

您当前的位置：

首页 >

文章列表页 >

2 600 W High Efficiency Laser Diode Source with Polarization Coupling

paper | 更新时间：2020-08-12

- 2 600 W High Efficiency Laser Diode Source with Polarization Coupling
- Chinese Journal of Luminescence Vol. 32, Issue 10, Pages: 1036-1040(2011)
- 作者机构：
  
  1. 中国科学院研究生院北京,100039
  2. 中国科学院激发态物理重点实验室长春光学精密机械与物理研究所,吉林长春,130033
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN248.4
- Received：08 April 2011，
  
  Revised：26 May 2011，
  
  Published Online：22 October 2011，
  
  Published：22 October 2011
- 稿件说明：
移动端阅览
彭航宇, 单肖楠, 马军龙, 付喜宏, 佟存柱, 王立军. 2 600 W偏振耦合高效率半导体激光光源[J]. 发光学报, 2011,32(10): 1036-1040

PENG Hang-yu, LIU Yun, SHAN Xiao-nan, ZHANG Jun-long, FU Xi-hong, TONG Cun-zhu, WANG Li-jun. 2 600 W High Efficiency Laser Diode Source with Polarization Coupling[J]. Chinese Journal of Luminescence, 2011,32(10): 1036-1040
彭航宇, 单肖楠, 马军龙, 付喜宏, 佟存柱, 王立军. 2 600 W偏振耦合高效率半导体激光光源[J]. 发光学报, 2011,32(10): 1036-1040 DOI：

PENG Hang-yu, LIU Yun, SHAN Xiao-nan, ZHANG Jun-long, FU Xi-hong, TONG Cun-zhu, WANG Li-jun. 2 600 W High Efficiency Laser Diode Source with Polarization Coupling[J]. Chinese Journal of Luminescence, 2011,32(10): 1036-1040 DOI：

摘要

将两个中心波长为808 nm

输出功率为1 500 W的半导体激光叠阵

经过快慢轴准直后

利用半波片将其中一个叠阵的偏振方向旋转90

使用偏振分光平板的耦合功能

将两个偏振方向相互垂直的激光耦合到一个光路。扩束后再通过焦距为100 mm的聚焦镜组聚焦

提高激光器的亮度。在工作电流为75 A时

输出功率达到了2 600 W

电光转换效率为48%

聚焦后的光斑尺寸为1 mm2 mm

功率密度为130 kWcm

-2

可直接应用于熔覆、表面硬化等加工领域。

Abstract

As the increasing applications of laser diodes in laser cladding and laser hardening

the single laser diode optical power can not meet the actual requirements. An improvement of the power and power density is necesary and it can be achieved by beam shaping and beam combination such as polarization coupling. The polarization coupling technology is used to couple two laser beams with thin-film plate polarizer. In this paper

two 808 nm vertically stacked arrays with an output power of 1 500 W was achieved. After fast axis and slow axis collimated

the polarization direction of one stacked arrays is rotated 90 through a half wave plate

thus

the polarization directions of two laser stack are vertical. The beams of two lasers are incident on thin-film plate polarizer; one transmits through it

and the other is reflected on it. Finally

two beams combine to one. Polarization coupling of two bars increases the power by a factor of 1.6

and the output power is 2 600 W

electro-optical conversion efficiency is more than 48%. The spot size is about 1 mm 2 mm. This source reaches an intensity of 130 kWcm

-2

. This laser can be directly applied to cladding

surface hardening and other fields.

关键词

Keywords

references

Ma Xiangzhu, Huo Jin, Qu Yi, et al. Thermal-resistor analysis of the laser chips with different size in C-mount package [J]. Chin. J. Lumin. (发光学报), 2011, 32 (2):184-187 (in Chinese).[2] Lin Zhiqi, Zhang Yang, Lang Yonghui, et al. Constant temperature control of semiconductor laser based on temperature characteristics of pn junction [J]. Chin. J. Lumin. (发光学报), 2009, 30 (2):223-227 (in Chinese).[3] Grenier P, Taillon Y, Labranche B, et al. Symmetrization device and laser diode system provided with the same:US,7260131 . 2007-08-01.[4] Spaeth W, Groetsch S, Moser R, et al. Microoptical device with mirrors: US,5808323 . 1998-09-15.[5] Gao Xin, Shinoda K, Saitoh M, et al. Laser light source and an optical system for shaping light from a laser-bar-stack:US,6943957 . 2005-09-13.[6] Feng Guangzhi, Gu Yuanyuan, Shan Xiaonan, et al. 808 nm high power diode laser stack with polarization coupling [J]. Chin. J. Lumin.(发光学报), 2008, 29 (4):695-720 (in Chinese).[7] Gu Yuanyuan, Feng Guangzhi, Shan Xiaonan, et al. 808 nm and 980 nm high power laser diode stack with wavelength coupling [J]. Opt. Precision Eng.(光学精密工程), 2009, 17 (1):8-13 (in Chinese).[8] Ding Peng, Cao Yinhua, Su Guoqiang, et al. 1 kW high power diode laser with polarization coupling by Gran-Tylor prism [J]. Chinese Journal of Lasers (中国激光), 2009, 36 (2):290-293 (in Chinese).[9] Haake J M, Zediker M S. High power direct diode laser successes [J]. SPIE, 2004, 5336 :107-115.

Views

104

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Highly Efficient Perovskite Solar Cells and Modules Enabled by In-situ Modification of Buried Interface

Machine Learning Assisted Optimization of Perovskite Thin Film Fabrication Process and Assessment of Feature Importance

Co-assembled Monolayers Modified Nickel Oxide for High Efficient Perovskite Solar Cells and Modules

Low Temperature 808 nm High Efficiency Semiconductor Laser

Experimental Study on High Efficiency Double Frequency Laser with LD Dual Pump Nd:YAG

Related Author

LIU Chong

GONG Jian

CHEN Qian

YANG Huidong

MA Meng’en

LI Weile

WANG Yao

CHEN Qian

Related Institution

Faculty of Intelligent Manufacturing， Wuyi University

Institute of New Energy Technology， College of Information Science and Technology， Jinan University

College of Physics and Optoelectronic Engineering， Jinan University

State Key Laboratory of Transient Optics and Photonics, Xi'an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences

College of Physics and Electronic Engineering, Key Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, Hainan Normal University

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰