As-doped p-type ZnMgO Films Grown by MOCVD

ZHAO Long; YIN Wei; XIA Xiao-chuan; WANG Hui; SHI Zhi-feng; ZHAO Wang; WANG Jin; DONG Xin; Z

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As-doped p-type ZnMgO Films Grown by MOCVD

paper | 更新时间：2020-08-12

- As-doped p-type ZnMgO Films Grown by MOCVD
- Chinese Journal of Luminescence Vol. 32, Issue 10, Pages: 1020-1023(2011)
- 作者机构：
  
  1. 集成光电子学国家重点联合实验室吉林大学电子科学与工程学院, 吉林长春 130012
  2. 大连理工大学物理与光电工程学院, 辽宁大连 116024
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN304.2
- Received：12 May 2011，
  
  Revised：2011-6-30，
  
  Published Online：22 October 2011，
  
  Published：22 October 2011
- 稿件说明：
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赵龙, 殷伟, 夏晓川, 王辉, 史志锋, 赵旺, 王瑾, 董鑫, 张宝林, 杜国同. 利用MOCVD技术生长As掺杂的p-ZnMgO薄膜[J]. 发光学报, 2011,32(10): 1020-1023

ZHAO Long, YIN Wei, XIA Xiao-chuan, WANG Hui, SHI Zhi-feng, ZHAO Wang, WANG Jin, DONG Xin, ZHANG Bao-lin, DU Guo-tong. As-doped p-type ZnMgO Films Grown by MOCVD[J]. Chinese Journal of Luminescence, 2011,32(10): 1020-1023
赵龙, 殷伟, 夏晓川, 王辉, 史志锋, 赵旺, 王瑾, 董鑫, 张宝林, 杜国同. 利用MOCVD技术生长As掺杂的p-ZnMgO薄膜[J]. 发光学报, 2011,32(10): 1020-1023 DOI：

ZHAO Long, YIN Wei, XIA Xiao-chuan, WANG Hui, SHI Zhi-feng, ZHAO Wang, WANG Jin, DONG Xin, ZHANG Bao-lin, DU Guo-tong. As-doped p-type ZnMgO Films Grown by MOCVD[J]. Chinese Journal of Luminescence, 2011,32(10): 1020-1023 DOI：

摘要

利用GaAs夹层掺杂的新方法

采用金属有机化学气相沉积(MOVCD)技术

通过控制生长温度

在蓝宝石衬底上成功制备出As掺杂的p型ZnMgO薄膜。利用X射线衍射分析(XRD)、霍尔效应测试和光致发光(PL)谱等表征方法对薄膜的晶体结构、电学性能和光学特性进行分析。结果表明:高温生长的ZnMgO薄膜具有良好的

轴取向性;480~520 ℃时所制备的ZnMgO薄膜为p型导电

500 ℃时所制备的样品电阻率最低

为26.33 cm

空穴浓度达1.63810

-3

迁移率为1.45 cm

/(Vs);室温PL谱显示

制得的p型ZnMgO薄膜具有较大的紫外与可见发光峰强度比

表明其具有良好的光学性能。

Abstract

By introducing the GaAs interlayer and controling growth temperature

the p-type ZnMgO films were grown on (0001) Al

substrates by metal organic chemical vapor deposition (MOCVD) method. The X-ray diffraction results indicated that the ZnMgO films showed

-axis preferential orientation at temperature of 440~520 ℃. A conversion of conduction type was confirmed by Hall effect measurement in a range of temperature from 480 to 520 ℃. The lowest resistivity was 26.33 cm

with a carrier concentration of 1.63810

-3

and a hall mobility of 1.45 cm

/(Vs). The room temperature photoluminescence (PL) spectrum displayed all the p-type ZnMgO films showed good optical qualities

with a big ratio of near band emission (NBE) to deep level emission (DLE).

关键词

Keywords

references

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