Temperature-dependent PL of InGaN/GaN Multiple Quantum Wells with Variable Content of In

XING Bing; CAO Wen-yu; DU Wei-min

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Temperature-dependent PL of InGaN/GaN Multiple Quantum Wells with Variable Content of In

paper | 更新时间：2020-08-12

- Temperature-dependent PL of InGaN/GaN Multiple Quantum Wells with Variable Content of In
- Chinese Journal of Luminescence Vol. 31, Issue 6, Pages: 864-869(2010)
- 作者机构：
  
  北京大学物理学院北京,100871
- 作者简介：
- 基金信息：
- DOI：
  CLC： O482.31
- Received：24 May 2010，
  
  Revised：20 July 2010，
  
  Published Online：22 November 2010，
  
  Published：22 November 2010
- 稿件说明：
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邢兵, 曹文彧, 杜为民. 不同In含量InGaN/GaN量子阱材料的变温PL谱[J]. 发光学报, 2010,31(6): 864-869

XING Bing, CAO Wen-yu, DU Wei-min. Temperature-dependent PL of InGaN/GaN Multiple Quantum Wells with Variable Content of In[J]. Chinese Journal of Luminescence, 2010,31(6): 864-869
邢兵, 曹文彧, 杜为民. 不同In含量InGaN/GaN量子阱材料的变温PL谱[J]. 发光学报, 2010,31(6): 864-869 DOI：

XING Bing, CAO Wen-yu, DU Wei-min. Temperature-dependent PL of InGaN/GaN Multiple Quantum Wells with Variable Content of In[J]. Chinese Journal of Luminescence, 2010,31(6): 864-869 DOI：

摘要

通过对不同In含量的InGaN/GaN量子阱材料的变温光致发光(PL)谱进行实验分析

得出样品激活能和PL谱峰值能量随温度变化的S形曲线中拐点温度与In含量的关系。说明对于我们的样品

这种S形曲线并不是来源于量子限制Stark效应(QCSE)

而是与量子阱中In团簇有关。对比结果表明

含In量越多的材料其局域的能量越大

由热扰动脱离局域所需要的温度越高。

Abstract

Temperature-dependent photoluminescence (PL) of InGaN/GaN multiple quantum wells (MQWs) is studied. Three samples have different percentage composition of In: 10%

14% and 17%. With increasing temperature

we can observe "S-shaped" behavior of the peak energy for all three samples. Because the second temperature turn of the "S-shaped" curves are different for each samples

and the blueshift energy of 10 meV in our samples is less than the energy shift result from QCSE

the S-shape is unrelated with QCSE. By using multi-channel Arrhenius plot formula

the samples' activation energies are calculated

which stand for the level of localized In-cluster. And it is found that both the activation energies and the second temperature turn of the "S-shaped" curves increase with increasing the content of indium for three samples. This phenomenon can be demonstrated by the reason that the sample which containing much In has lager activation energy

the photo-carriers need much thermal energy to get out of the local potential minima induced by In-cluster. These results further illustrate that the emission of InGaN/GaN multiple quantum wells is due to the radiative recombination of excitons localized in potential minima induced by In-cluster.

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references

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