Application of semiconductor nanostructure materials in devices has become one of the major focuses in recent nanoscience researches. And considerable effort has been made to fabricate the zinc oxide (ZnO). With its large exciton binding energy of 60 meV

ZnO has been recognized as a promising photonic material in the shortwavelength region with significant potential in laser emission

field emission

and nanoscale heterojunction. Electrodeposition of polycrystalline semiconductor is mainly used for photovoltaic and optoelectronic applications. It is a simple and inexpensive technique compared to molecular beam epitaxy (MBE)

liquid phase deposition (LPD)

or chemical vapor deposition (CVD). Granular systems consisting of nanoscale ferromagnetic clusters imbedded in a semiconductor matrix have been recently realized using low temperature MBE by ion implantation/annealing

or simple annealing. As an alternative to this approach

we have investigated the electrodeposition of semiconductor-based systems consisting of Mn

2+

in a ZnO semiconductor host.In this paper

we present the results of structural and optical properties of Mn doped ZnO nano columns electrodeposited onto p-type Si (111) substrates. Mn

2+

-doped ZnO nanocolumns have been successfully grown by electrodeposition method on Si substrate. The columns are 500~600 nm long with diameters ranging in 200~300 nm. X-ray diffraction (XRD) and X-ray photospectroscopy (XPS) studies suggeste that the Mn ions dope into the ZnO crystal lattice. The concentration of Mn ions is 2%. In the resonant-Raman spectrum

phonon frequency shifts to higher wavenumbers. In photoluminescence spectrum

a weak ultraviolet emission and a strong visible emission are observed.