Electron Transport Layers of Inverted Heterojunction Organic Solar Cells

WU Bing; LIU Peng-yi; LI Yan-wu; HOU Lin-tao

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Electron Transport Layers of Inverted Heterojunction Organic Solar Cells

paper | 更新时间：2020-08-12

- Electron Transport Layers of Inverted Heterojunction Organic Solar Cells
- Chinese Journal of Luminescence Vol. 31, Issue 5, Pages: 753-756(2010)
- 作者机构：
  
  暨南大学物理系,广东广州,510632
- 作者简介：
- 基金信息：
- DOI：
  CLC： TM914.4
- Received：24 August 2009，
  
  Revised：26 September 2009，
  
  Published Online：21 September 2010，
  
  Published：21 September 2010
- 稿件说明：
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吴冰, 刘彭义, 李艳武, 侯林涛. 倒置异质结有机太阳能电池的电子传输层[J]. 发光学报, 2010,31(5): 753-756

WU Bing, LIU Peng-yi, LI Yan-wu, HOU Lin-tao. Electron Transport Layers of Inverted Heterojunction Organic Solar Cells[J]. 发光学报, 2010,31(5): 753-756
吴冰, 刘彭义, 李艳武, 侯林涛. 倒置异质结有机太阳能电池的电子传输层[J]. 发光学报, 2010,31(5): 753-756 DOI：

WU Bing, LIU Peng-yi, LI Yan-wu, HOU Lin-tao. Electron Transport Layers of Inverted Heterojunction Organic Solar Cells[J]. 发光学报, 2010,31(5): 753-756 DOI：

摘要

制备了结构为ITO/BCP或Alq

(

40 nm)/C

(50 nm)/Rubrene(50 nm)/MoO

(5 nm)/Al(130 nm)的倒置异质结有机太阳能电池

其中BCP或Alq

作电子传输层。实验结果表明:当BCP或Alq

6 nm时

器件性能随电子传输层厚度的变化不大;当BCP或Alq

10 nm时

随电子传输层厚度的增加

含Alq

器件的性能衰减很快

含BCP器件的性能衰减相对较慢

且其开路电压保持不变。分析表明:当电子传输层较薄时

粗糙的ITO使电子较容易从C

注入到ITO;当电子传输层较厚时

BCP/C

之间的能带弯曲使二者之间几乎不存在势垒

含BCP器件性能较差主要源于BCP较差的电子迁移率

而含Alq

器件性能较差主要源于Alq

之间的势垒。

Abstract

Inverted heterojunction organic solar cells with a structure of ITO/BCP or Alq

(

40 nm)/C

(50 nm)/Rubrene(50 nm)/MoO

(5 nm)/Al(130 nm) were prepared

in which BCP or Alq

was used as electron transport layer. The experiment results show that when BCP or Alq

6 nm

device performance hardly changes with the increase of thickness of electron transport layers; When BCP or Alq

10 nm

device performance degrades quickly with the increase of thickness of Alq

but slower and open circuit voltage remains unchanged with the increase of thickness of BCP. When electron transport layer is thin

the roughness of ITO makes electrons injection from C

into ITO easy; when electron transport layer is thick

since band bending of BCP/C

almost make that potential barrier between BCP and C

does not exist

the bad device performance with BCP mainly comes from poor BCP electron mobility

that of one with Alq

was primarily due to potential barrier between Alq

and C

关键词

Keywords

references

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