Impact of Asymmetry and Doping Density on Electron Raman Scattering in Triangular Double Quantum Wells

GU Dong-xia; LIU Cui-hong; GUO Zheng-li; LU Fa

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Impact of Asymmetry and Doping Density on Electron Raman Scattering in Triangular Double Quantum Wells

paper | 更新时间：2020-08-12

- Impact of Asymmetry and Doping Density on Electron Raman Scattering in Triangular Double Quantum Wells
- Chinese Journal of Luminescence Vol. 31, Issue 4, Pages: 477-483(2010)
- 作者机构：
  
  广州大学物理与电子工程学院, 广东广州 510006
- 作者简介：
- 基金信息：
  
  Research supported by Natural Science Foundation of China(60878002).
- DOI：
  CLC： O472
- Received：02 September 2009，
  
  Revised：13 November 2009，
  
  Published Online：27 August 2010，
  
  Published：27 August 2010
- 稿件说明：
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谷冬霞, 刘翠红, 郭正丽, 卢发. 双三角量子阱中不对称性及掺杂浓度对电子拉曼散射的影响[J]. 发光学报, 2010,31(4): 477-483

GU Dong-xia, LIU Cui-hong, GUO Zheng-li, LU Fa. Impact of Asymmetry and Doping Density on Electron Raman Scattering in Triangular Double Quantum Wells[J]. 发光学报, 2010,31(4): 477-483
谷冬霞, 刘翠红, 郭正丽, 卢发. 双三角量子阱中不对称性及掺杂浓度对电子拉曼散射的影响[J]. 发光学报, 2010,31(4): 477-483 DOI：

GU Dong-xia, LIU Cui-hong, GUO Zheng-li, LU Fa. Impact of Asymmetry and Doping Density on Electron Raman Scattering in Triangular Double Quantum Wells[J]. 发光学报, 2010,31(4): 477-483 DOI：

摘要

在有效质量近似下

从理论上研究了非对称双三角量子阱的拉曼散射。推导了导带子带间电子跃迁的微分散射截面表达式

以GaAs/Al

As材料为例进行了数值计算。结果表明

散射光谱不仅与掺杂浓度有关

而且与双量子阱的不对称性有关

随着量子阱不对称性的增加或掺杂浓度的减少

散射峰发生了红移。本工作对设计新型微电子和光电子器件有一定的指导意义。

Abstract

Electron Raman scattering (ERS) is investigated theoretically in asymmetric triangular double quantum wells (ATDQWs) within the framework of effective-mass approximation. The differential cross-section (DCS) is derived. Numerical calculations are performed for GaAs/Al

As ATDQWs. Results show that the ERS spectrum depends not only on the doping content but also on the asymmetry of ATDQWs. The spectrum yields a red shift with increasing the asymmetry of quantum wells or decreasing the Al doping content.

关键词

Keywords

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