Investigation of Strain of GaN Light-emitting Diode Films Transferred to Metal Substrate from Si(111)

XIONG Yi-jing; ZHANG Meng; XIONG Chuan-bing; XIAO Zong-hu; WANG Guang-xu; WANG Yan-ming; J

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Investigation of Strain of GaN Light-emitting Diode Films Transferred to Metal Substrate from Si(111)

paper | 更新时间：2020-08-12

- Investigation of Strain of GaN Light-emitting Diode Films Transferred to Metal Substrate from Si(111)
- Chinese Journal of Luminescence Vol. 31, Issue 4, Pages: 531-537(2010)
- 作者机构：
  
  南昌大学教育部发光材料与器件工程研究中心,江西南昌,330047
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN304.055
- Received：10 March 2010，
  
  Revised：06 May 2010，
  
  Published Online：27 August 2010，
  
  Published：27 August 2010
- 稿件说明：
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熊贻婧, 张萌, 熊传兵, 肖宗湖, 王光绪, 汪延明, 江风益. Si衬底GaN基LED外延薄膜转移至金属基板的应力变化[J]. 发光学报, 2010,31(4): 531-537

XIONG Yi-jing, ZHANG Meng, XIONG Chuan-bing, XIAO Zong-hu, WANG Guang-xu, WANG Yan-ming, JIANG Feng-yi. Investigation of Strain of GaN Light-emitting Diode Films Transferred to Metal Substrate from Si(111)[J]. 发光学报, 2010,31(4): 531-537
熊贻婧, 张萌, 熊传兵, 肖宗湖, 王光绪, 汪延明, 江风益. Si衬底GaN基LED外延薄膜转移至金属基板的应力变化[J]. 发光学报, 2010,31(4): 531-537 DOI：

XIONG Yi-jing, ZHANG Meng, XIONG Chuan-bing, XIAO Zong-hu, WANG Guang-xu, WANG Yan-ming, JIANG Feng-yi. Investigation of Strain of GaN Light-emitting Diode Films Transferred to Metal Substrate from Si(111)[J]. 发光学报, 2010,31(4): 531-537 DOI：

摘要

采用电镀金属基板及湿法腐蚀衬底的方法将硅衬底上外延生长的GaN MQW LED薄膜转移至不同结构的金属基板

通过高分辨X射线衍射(HRXRD)和光致发光(PL)研究了转移的GaN薄膜应力变化。研究发现:(1)转移至铜基板、铬基板、铜/镍/铜叠层基板等三种基板的GaN薄膜张应力均减小

其中转移至铬基板的GaN薄膜张应力最小。(2)随着铬基板中铬主体层厚度的增加

转移后的GaN薄膜应力不发生明显变化。

Abstract

GaN-based MQW light-emitting diode films was transferred to metal substrate from Si(111) substrate by electro-plating and chemical etching. Then

high resolution X-ray diffraction(HRXRD) and photoluminescence(PL) was used to investigate the strain of GaN films in the transfer process. In the study

we designed a series of metal substrates of different structure: (1) Copper substrate

(2)chrome substrate and (3)copper/nickel/copper substrate because of their special thermal and mechanical properties. It was revealed that the tensile strain of GaN films decreases when it is transferred from Si(111) substrate to such three kinds of metal substrates

which is propitious to GaN films. And there is a maximal decrease of tensile strain when GaN films are transferred to chrome substrate. The main layer of electro-plating chrome in the chrome substrate is playing an important role in the sustentation to GaN films. And it was found that

with the thickness increasing of main layer

the strain of GaN films has no change

so the thickness of main layer could be added as more as possible

which can enhance the mechanical properties of chips in the manufacture process.

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