The Aging Characteristics of GaN-based Blue LED on Si Substrate

XIAO You-peng; MO Chun-lan; QIU Chong; JIANG Feng-yi

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The Aging Characteristics of GaN-based Blue LED on Si Substrate

paper | 更新时间：2020-08-12

- The Aging Characteristics of GaN-based Blue LED on Si Substrate
- Chinese Journal of Luminescence Vol. 31, Issue 3, Pages: 364-368(2010)
- 作者机构：
  
  1. 南昌大学教育部发光材料与器件工程研究中心,江西南昌,330047
  2. 晶能光电(江西)有限公司,江西南昌,330096
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN383.1;O482.31
- Received：09 October 2009，
  
  Revised：02 January 1900，
  
  Published Online：30 June 2010，
  
  Published：30 June 2010
- 稿件说明：
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XIAO You-peng, MO Chun-lan, QIU Chong, et al. The Aging Characteristics of GaN-based Blue LED on Si Substrate[J]. Chinese journal of luminescence, 2010, 31(3): 364-368.
DOI：

XIAO You-peng, MO Chun-lan, QIU Chong, et al. The Aging Characteristics of GaN-based Blue LED on Si Substrate[J]. Chinese journal of luminescence, 2010, 31(3): 364-368. DOI：

摘要

报道了芯片尺寸为500 μm×500 μm 硅衬底GaN基蓝光LED在常温下经1 000 h加速老化后的电学和发光性能

其光功率随老化时间的变化分先升后降两个阶段;老化后的反向漏电流和正向小电压下的电流均有明显的增加;老化后器件的外量子效率(EQE)比老化前低;老化前后EQE衰减幅度在不同的注入电流下存在明显差异

衰减幅度最小处出现在发光效率最高时对应的电流密度区间。

Abstract

The electrical and optical aging characteristics of GaN-based light-emitting diodes on Si substrate were studied. The LED samples were stressed at room temperature with an injection current of 200 mA. Light-output power increases in the first stage and decreases with aging time. The current-voltage characteristics were also analyzed. Reverse current and forward current at low bias were increased significantly. The external quantum efficiency (EQE) of device after aging is lower than the pre-aging one. The EQE attenuation before and after aging are significantly different at different injection currents. The smallest attenuation occurs in the current density range corresponding to the highest efficiency.

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references

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