The electronic structures and optical properties of pure and Al-N codoped wurtzite ZnO were calculated using first principle ultrasoft pseudopotential approach of the plane wave based upon the density func-ational theory.Codoped theory showed that
in the ZnO doped system
when the concentration of Al and N equal
Al-N complex formed
N may be fully compensated
but the concentration of N is twice or more times as the concentration of Al
may be the formation of Al-N
2
Al-N
3
Al-N
4
complex
these complexes are likely to reduce the ionization energy of a single N atom.To verify the feasibility of this approach
we chosen 32-atom supercell model to calculated the electronic structure and related parameters of the Al-N codoped wurtzite ZnO
and analysised the mechanism of the increasing of the hole concentration in Al-N codoped p-type ZnO.Firstly
we calculated the binding energy of Al-N complex codoped ZnO and found that Al-N complex can exist in ZnO stably
therefore Al-N codoped ZnO can improve the N solubility of doping. Studies showed that
due to the orbital hybrid between N-2p and Zn-3d
the Fermi level is deeply into the valence band
the top of the valence band shift up and the bottom of the conduction band shift down
resulting in the band gap narrowed.While proper control the ratio of Al and N
the exclusion between the acceptor atoms weakened and the acceptor level was lower after the Al-N complex doped ZnO.So Al-N codoping is an important method to improve the characteristic of p-type ZnO.Besides
in the Al-N codoped ZnO system
the decrease of band gap and the absorption bandedge red-shift will happen after Al-N codoping
experimental phenomena also approve the result.
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Related Author
ZHU Yizhi
ZHANG Song
SHEN Tao
SHI Linlin
GUO Heng
WANG Shuang
ZHANG Xu
LIU Xian-zhe
Related Institution
The Center for Industrial Technology Innovation and Development of Bijie
State Key Laboratory of Optical Technologies on Nano-Fabrication and Micro-Engineering, Institute of Optics and Electronics, Chinese Academy of Sciences
College of Physics and Optoelectronic Engineering, Taiyuan University of Technology
Department of Science, Taiyuan Institute of Technology
Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, School of Materials Sciences and Engineering, South China University of Technology