Fabrication and Characteristics of Transparent Conducting Bismuth-doped Thin Indium Oxide Film

TIAN Miao-miao; FAN Yi; LIU Xing-yuan

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Fabrication and Characteristics of Transparent Conducting Bismuth-doped Thin Indium Oxide Film

paper | 更新时间：2020-08-12

- Fabrication and Characteristics of Transparent Conducting Bismuth-doped Thin Indium Oxide Film
- Chinese Journal of Luminescence Vol. 31, Issue 4, Pages: 605-608(2010)
- 作者机构：
  
  1. 中国科学院长春光学精密机械与物理研究所激发态物理重点实验室,吉林长春,130033
  2. 中国科学院研究生院北京,100039
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN383.1;O484.4
- Received：20 January 2010，
  
  Revised：24 March 2010，
  
  Published Online：27 August 2010，
  
  Published：27 August 2010
- 稿件说明：
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田苗苗, 范翊, 刘星元. 透明导电铟铋氧化物薄膜的制备及其性能[J]. 发光学报, 2010,31(4): 605-608

TIAN Miao-miao, FAN Yi, LIU Xing-yuan. Fabrication and Characteristics of Transparent Conducting Bismuth-doped Thin Indium Oxide Film[J]. 发光学报, 2010,31(4): 605-608
田苗苗, 范翊, 刘星元. 透明导电铟铋氧化物薄膜的制备及其性能[J]. 发光学报, 2010,31(4): 605-608 DOI：

TIAN Miao-miao, FAN Yi, LIU Xing-yuan. Fabrication and Characteristics of Transparent Conducting Bismuth-doped Thin Indium Oxide Film[J]. 发光学报, 2010,31(4): 605-608 DOI：

摘要

以氧化铟为主体材料

以铋为掺杂材料

采用真空热蒸发方法研制出2.5%铋掺杂的透明导电氧化物薄膜(IBO)。实验表明:IBO薄膜具有良好的表面形貌

载流子浓度为3.95510

-3

载流子迁移率达到50.21 cm

-1

电导率为 3.14310

-3

在可见光范围内的平均透过率超过82%

功函数为4.76 eV。采用其作为阳极制作的OLED得到最大亮度30 230 cd/m

最大电流效率为5.1 cd/A。结果表明IBO是一种良好的光电器件阳极材料。

Abstract

Transparent conducting thin indium bismuth oxide (IBO) film was prepared by using a modification-specific reactive thermal co-evaporation method. The room temperature carrier concentrations

resistivities and Hall carrier mobilities of the IBO coating were estimated from Hall effect measurement system. Transmittance spectra were measured with a Shimadzu UV-3101PC spectrophotometer. A field emission scanning electron microscopy (SEM) Hitachi S-4800 and GENE SIS2000 XMS 60S (EDAX Inc.) were used to investigate the morphology and ingredient of the IBO film

respectively. The thin IBO film shows a good optical transmittance in the visible spectra range and a electrical resistivity of 3.14310

-3

cm corresponding to a carrier density of 3.95510

-3

and a Hall mobility of 50.21 cm

-1

respectively. Using IBO film as the anode

organic light-emitting diode (OLED) with the structure of Glass/IBO/MoO

/NPB/Alq

/LiF/Al exhibits a high luminance of 30 230 cd/m

and an EL efficiency of 5.1 cd/A. Our results indicated that IBO is a promising transparent conducting oxide material

and a suitable electrical contact for optoelectronic devices.

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references

Lewis B G, Paine D C. Applications and processing of transparent conducting oxides

. MRS Bulletin, 2000, 25 (8):22-27.

Dawar A L, Joshi J C. Semiconducting transparent thin films: their properties and applications

. Mater. Sci., 1984, 19 (1):1-23.

Minami T. New n-type transparent conducting oxides

. MRS Bulletin, 2000, 25 (8):38-44.

Pan C A, Ma T P. High quality transparent oxide thin films prepared by thermal evaporation

. Appl. Phys. Lett., 1980, 37 (2):163-166.

Wang Xin, Xiang Rong, Li Ye, et al. Effect of thickness on the properties of ITO thin films grown on sapphire substrate

. Chin. J. Lumin. (发光学报), 2009, 30 (5):712-716 (in Chinese).

Zhang Y, Yin H, Huang J, et al. Recent progress in transparent and conducting films

. OME Information, 2006, 2 (1):56-60.

Wang Y, Yan Y, Shen M, et al. Advances in transparent conducting thin films

. Materials Review, 2006, 5 (20):317-319.

Gillham E J, Preston J S. Transparent conducting films

. Phys. Soc. B, 1952, 65 (8):649.

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Related Institution

College of Physics and Information Engineering， Quanzhou Normal University

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School of Science, Lanzhou University of Technology, Lanzhou 730050, China

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