Influence of O-Ar Ratio on Optoelectronic Properties of Co-doped ZnO

YUAN Ming; LI Hong-jian; LI Xue-yong; XU Ren-bo; ZHOU Zi-you; WANG Ji-fei

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Influence of O-Ar Ratio on Optoelectronic Properties of Co-doped ZnO

paper | 更新时间：2020-08-12

- Influence of O-Ar Ratio on Optoelectronic Properties of Co-doped ZnO
- Chinese Journal of Luminescence Vol. 31, Issue 4, Pages: 498-502(2010)
- 作者机构：
  
  1. 中南大学物理科学与技术学院, 湖南长沙 410083
  2. 中南大学材料科学与工程学院,湖南长沙,410083
- 作者简介：
- 基金信息：
- DOI：
  CLC： O472;O482.31
- Received：15 September 2009，
  
  Revised：30 November 2009，
  
  Published Online：27 August 2010，
  
  Published：27 August 2010
- 稿件说明：
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袁明, 李宏建, 李雪勇, 徐仁伯, 周子游, 王继飞. 氧氩比对钴掺杂氧化锌薄膜光电性能的影响[J]. 发光学报, 2010,31(4): 498-502

YUAN Ming, LI Hong-jian, LI Xue-yong, XU Ren-bo, ZHOU Zi-you, WANG Ji-fei. Influence of O-Ar Ratio on Optoelectronic Properties of Co-doped ZnO[J]. 发光学报, 2010,31(4): 498-502
袁明, 李宏建, 李雪勇, 徐仁伯, 周子游, 王继飞. 氧氩比对钴掺杂氧化锌薄膜光电性能的影响[J]. 发光学报, 2010,31(4): 498-502 DOI：

YUAN Ming, LI Hong-jian, LI Xue-yong, XU Ren-bo, ZHOU Zi-you, WANG Ji-fei. Influence of O-Ar Ratio on Optoelectronic Properties of Co-doped ZnO[J]. 发光学报, 2010,31(4): 498-502 DOI：

摘要

以氧化锌陶瓷靶和金属钴靶为靶材

利用磁控共溅射方法制备钴掺杂氧化锌(Co-ZnO)薄膜。研究了氧氩比对薄膜的结构、光学和电学性能的影响。结果表明:薄膜具有类似于ZnO的六方纤锌矿结构

并沿

轴择优生长;当氧氩比为2 ∶ 8时

薄膜具有较好的纳米晶粒和表面结构

其霍尔迁移率为2.18810

/Vs

最小电阻率为1.32610

其薄膜透光率最高

且在紫外区有一个相对较强的发射峰。

Abstract

The Co doped thin ZnO films were prepared on glass substrates using RF magnetron sputtering method. The influence of O-Ar ratio on the structural

electrical and optical properties of the films have been studied. The films are single phase and have wurtzite structure with

-axis orientation

and have good textures with little nano-crystalline grains and smooth surface when O-Ar ratio is 2 ∶ 8. The concentration of carriers of these films decreases as O-Ar ratio decreases

but as the Hall mobilities increased the Hall resistance is the lowest when O-Ar ratio is 2 ∶ 8. The film deposited at the O-Ar ratio of 2 ∶ 8 shows a highest transmittance and has an emission peak.

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