YOU Wei-guo, ZHANG Yong, LI Jing, YANG Feng, CHENG C H, ZHAO Yong. Effect of Sputtering Atmosphere on the Structure and Optical Properties of ZnO Thin Films by RF Reactive Magnetron Sputtering[J]. 发光学报, 2010,31(4): 503-508
YOU Wei-guo, ZHANG Yong, LI Jing, YANG Feng, CHENG C H, ZHAO Yong. Effect of Sputtering Atmosphere on the Structure and Optical Properties of ZnO Thin Films by RF Reactive Magnetron Sputtering[J]. 发光学报, 2010,31(4): 503-508DOI:
Effect of Sputtering Atmosphere on the Structure and Optical Properties of ZnO Thin Films by RF Reactive Magnetron Sputtering
Thin ZnO films were prepared by RF reactive magnetron sputtering with different sputtering pressure and argon-oxygen ratio.The effect of the sputtering pressure and argon-oxygen ratio on the structure and optical properties of the ZnO films were studied using the X-ray diffraction (XRD)
scanning electron microscopy (SEM) and F-7100 photoluminescence (PL) spectroscopy. The results indicated that the thin ZnO films have hexagonal wurtzite single phase structure and a preferred orientation with the c axis perpendicular to the substrates.When the sputtering pressure is 0.6 Pa and the argon-oxygen ratio is Ar/O
2
=20/5.5 sccm
the (002) plane diffraction peak intensity and the grain size are larger
the FWHM of (002) peak is the smallest
UV photoluminescence peak intensity is the strongest.
关键词
Keywords
references
King S L, Gardeniers J G E, Boyd L W. Pulsed-laser deposited ZnO for device application
. Appl. Surf. Sci., 1996, 96-98 :811-818.
Yang Lirong, Jin Zhengguo, Bu Shaojing, et al. Preparation and optical properties of ZnO thin films
. Ordance Material Science and Engineering (兵器材料科学与工程), 2004, 27 (1):34-38 (in Chinese).
Shi Zengliang, Liu Dali, Yan Xiaobong, et al. Effects of the low-temperature buffer layer on the properties of ZnO thin films
. Chin. J. Lumin. (发光学报), 2008, 29 (1):124-128 (in Chinese).
Weng Zhankun, Liu Aimin, Liu Yanhong, et al. Photoluminescence and formation of ZnO thin films on n-InP(100) by electrodeposition
. Chin. J. Lumin. (发光学报), 2008, 29 (2):283-288 (in Chinese).
Liu Xuedong, Gu Shulin, Li Feng, et al. The effect of carrier gas H2 used during MOCVD-growth on the properties of N-doped ZnO
. Chin. J. Lumin. (发光学报), 2008, 29 (3):441-446 (in Chinese).
Bae S H, Lee S Y, Jin B J, et al. Growth and characterization of ZnO thin films grown by pulsed laser deposition
. Appl. Surf. Sci., 2001, 169-170 :525-528.
Fu Z, Lin B, Zu J. Photoluminescence and structure of ZnO films deposited on Si substrates by metal-organic chemical vapor deposition
. Thin Solid Films, 2002, 402 (1-2):302-306.
Kim Youngsung, Tai Weonpil. Electrical and optical properties of A1-doped ZnO thin films by sol-gel process
. Appl. Surf. Sci., 2007, 253 (11):4911-4916.
Parmod Sagar, Shishodia P K, Mehra R M. Influence of pH value on the quality of sol-gel derived ZnO films
. Appl. Surf. Sci., 2007, 253 (12):5419-5424.
Park K C, Ma D Y, Kim K H. The physical properties of Al-doped zinc oxide films prepared by RF magnetron sputtering
. Thin Solid Films, 1997, 305 (1-2):201-209.
Yang Chengtao, Zeng Zeyu, Chen Zhu, et al. Characterization of ZnO thin films deposited on diamond-like carbon coated onto Si and SiO2/Si substrate
. J. Cryst.Growth, 2006, 293 (2):299-304.
Tang I-Tseng, Wang Y C, Hwang W C, et al.Investigation of piezoelectric ZnO film deposited on diamond like carbon coated onto Si substrate under different sputtering conditions
. J. Cryst.Growth, 2003, 252 (1-3):190-198.
Tang Z K, Wong G K L, Yu P, et al. Room-temperature ultraviolet laser emission from self-assembled ZnO microcrystallite thin films
. Appl. Phys. Lett.,1998, 72 (25):3270-3275.
Guo Chengxin, Fu Zhuxi, Shichaoshu. Superlinear increase phenomenon of UV luminescence of ZnO film under cathodo-luminescent excitation
. Chin. J. Lumin. (发光学报), 1998, 19 (3):239-241 (in Chinese).
Song G L, Liang H, Sun K X. Study on the visible emission mechanism of nanocoystalline ZnO powder
. Acta Photo-nica Sinica (光子学报), 2004, 33 (4):485-488 (in Chinese).
Zhang Xitian, Liu Yichun, Zhi Zhuang Zhi, et al. Investigation on nanocrystalline ZnO thin films prepared by thermal oxidation of ZnS thin films
. Chin. J. Semicond. (半导体学报), 2003, 24 (1):44-48 (in Chinese).