As the surprising development of fiber telecommunication and microelectronics technology

opto-electronic integrated circuit (OEIC) has becomes the focus of advanced research in the world recently. At present

there have been many new technologies that are applied to silicon-based light emission

such as po-rous silicon

nano crystals

SiGe

and so on

because Si material is low cost and the manufacture technology is mature. However

these techniques realize optical interconnection difficultly

which can not be compatible with the mature very large scale integrated circuits (VLSI) technology. One of the key works is to realize a practical light source to satisfy the requirement of optical interconnection. To obtain a Si LED(light-emitting diode) which can transmit optical signal in a chip

it was considered to improve the light intense and decrease cost by using new manufacture technology. In this paper

a forked type of Si LED is designed and manufactured with Singapore Charters 0.35 μm double-grid standard CMOS technology. The device structure adopts n-well and p-sub junction

which n-well is a forked type and is embedded in p-sub. The idea of layout design is to achieve even light of Si LED

because the contact area of n-well and p-sub is large

and the electric field is symmetrical and uniform. At room temperature

the Si LED is reverse biased. The Si LEDs emitting micrographs and real layouts are captured by an Olympus IC microscope

and the

I-V

characteristics and emission spectra of Si LED are presented. With forward bias

the threshold voltage is 0.9 V. And the Si LED can emit an visible light when the reverse bias is 15 V. Its radiant intensity is 10 nW at 50 mA current and the emitting peak value is located at 758 nm. As it is known

Si is an indirect band gap material

the emission intense of Si LED would be low. But the emission of our Si LED can meet the detect requirement of Si detectors.