Improved Hole-injection Contact by Employing an Ultra-thin MoO<SUB>3</SUB> Carrier Injection Layer

HOU Lin-tao; LIU Peng-yi; ZHANG Jing-lei; WU Chun-hong; LI Yan-wu; WU Bing

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Improved Hole-injection Contact by Employing an Ultra-thin MoO₃ Carrier Injection Layer

paper | 更新时间：2020-08-12

- Improved Hole-injection Contact by Employing an Ultra-thin MoO₃ Carrier Injection Layer
- Chinese Journal of Luminescence Vol. 31, Issue 3, Pages: 326-330(2010)
- 作者机构：
  
  暨南大学理工学院物理系,广东广州,510632
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN383.1
- Received：26 May 2009，
  
  Revised：02 January 1900，
  
  Published Online：30 June 2010，
  
  Published：30 June 2010
- 稿件说明：
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HOU Lin-tao, LIU Peng-yi, ZHANG Jing-lei, et al. Improved Hole-injection Contact by Employing an Ultra-thin MoO₃ Carrier Injection Layer[J]. Chinese journal of luminescence, 2010, 31(3): 326-330.
DOI：

HOU Lin-tao, LIU Peng-yi, ZHANG Jing-lei, et al. Improved Hole-injection Contact by Employing an Ultra-thin MoO₃ Carrier Injection Layer[J]. Chinese journal of luminescence, 2010, 31(3): 326-330. DOI：

摘要

研究了三氧化钼(MoO

)薄层作为有机电致发光器件空穴注入层的器件性能和注入机制。发现1 nm厚度下发光器件性能最佳

器件的最大电流效率比对比发光器件的最大电流效率提高1.6倍。器件的电容曲线表明MoO

薄层能有效提高空穴载流子的注入

多数载流子开始注入的拐点大约降低了9 V。单空穴载流子电流曲线说明MoO

器件的电流注入是空间电荷受限电流注入机制

MoO

使阳极界面处形成欧姆接触

而对比器件的电流注入是陷阱电荷受限电流注入机制。器件的光伏曲线进一步说明器件性能的提高是由于MoO

层能使阳极界面能级分布发生改变

1 nm MoO

厚度下器件的内建电势从对比器件的0.25 V提高到了0.8 V

有效降低了空穴注入势垒

提高了器件性能

但过厚的MoO

层由于增加了器件的串联内阻

会导致器件性能降低。

Abstract

An efficient hole-injection contact was achieved for organic light-emitting diodes (OLEDs) based on molybdenum oxide (MoO

) as the buffer layer on indium tin oxide. The significant effect of MoO

is that the devices show low operational voltage and high electroluminescence efficiency in a wide range of MoO

thickness. The device with a 1 nm-thick MoO

layer shows the best performance

the current efficiency is enhanced by 1.6 times by comparing with the control device. Capacitance-voltage measurement demonstrated that hole injection is enhanced in low operational voltage through the addition of MoO

. Results of the hole-only devices revealed that ohmic hole injection is formed at ITO/MoO

/NPB interface. Photovoltaic measurements confirmed that the improved hole injection is due to the reduction of barrier height

which is resulted from the addition of transition metal oxide.

关键词

Keywords

references

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Improved Hole-injection Contact by Employing an Ultra-thin MoO3 Carrier Injection Layer

DOI：

摘要

Abstract

关键词

Keywords

references

Improved Hole-injection Contact by Employing an Ultra-thin MoO₃ Carrier Injection Layer