Self-assembly of SiO<SUB>x</SUB>Novel Nanostructures and Their Optical Property

WANG Li; ZHANG Guang-bin; QIN Xiao-ying; LIANG Qi; YU Yong-qiang; WANG Jun-ming

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Self-assembly of SiO_xNovel Nanostructures and Their Optical Property

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- Self-assembly of SiO_xNovel Nanostructures and Their Optical Property
- Chinese Journal of Luminescence Vol. 31, Issue 3, Pages: 390-394(2010)
- 作者机构：
  
  1. 合肥工业大学电物学院,安徽合肥,230009
  2. 安徽建筑工业学院电信学院,安徽合肥,230601
  3. 中国科学院固体物理研究所,安徽合肥,230031
- 作者简介：
- 基金信息：
- DOI：
  CLC： O482.31
- Received：12 December 2009，
  
  Revised：02 January 1900，
  
  Published Online：30 June 2010，
  
  Published：30 June 2010
- 稿件说明：
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WANG Li, ZHANG Guang-bin, QIN Xiao-ying, et al. Self-assembly of SiO_xNovel Nanostructures and Their Optical Property[J]. Chinese journal of luminescence, 2010, 31(3): 390-394.
DOI：

WANG Li, ZHANG Guang-bin, QIN Xiao-ying, et al. Self-assembly of SiO_xNovel Nanostructures and Their Optical Property[J]. Chinese journal of luminescence, 2010, 31(3): 390-394. DOI：

摘要

采用化学气相沉积法

以纳米Mg

Si和SiO

的混合粉体作为硅源

在较低温度自组织生长了大量绳状SiO

新奇纳米结构。利用扫描电子显微镜、透射电子显微镜等手段对纳米结构进行了系统表征

并在室温观测到了光致发光

其发光峰峰位在560 nm附近

在此基础上对该纳米结构的生长机理进行了深入的讨论。

Abstract

Self-assembly of rod-like SiO

(x=1~2) nanostructures were formed via chemical vapor deposition method by heating the Mg

Si and SiO

nanoparticles mixture at low temperature. The nanostructures were analyzed by scanning electron microscopy

transmission electron microscopy

energy dispersive spectroscopy and low-energy electron diffraction methods. The photoluminescence (PL) characterization spectrum of the nanostructures showed a strong peak at 560 nm. Furthermore

the growth mechanism of the SiO

nanostructures was discussed qualitatively.

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Keywords

references

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Self-assembly of SiOxNovel Nanostructures and Their Optical Property

DOI：

摘要

Abstract

关键词

Keywords

references

Self-assembly of SiO_xNovel Nanostructures and Their Optical Property