Influence of Oxygen Flow Rate on the Morphology and the Optical Properties of Thin ZnO Films Grown by Pulsed Laser Deposition

CAO Pei-jiang; LIN Chuan-qiang; ZENG Yu-xiang; LIU Wen-jun; JIA Fang; ZHU De-liang; MA Xia

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Influence of Oxygen Flow Rate on the Morphology and the Optical Properties of Thin ZnO Films Grown by Pulsed Laser Deposition

paper | 更新时间：2020-08-12

- Influence of Oxygen Flow Rate on the Morphology and the Optical Properties of Thin ZnO Films Grown by Pulsed Laser Deposition
- Chinese Journal of Luminescence Vol. 31, Issue 2, Pages: 239-242(2010)
- 作者机构：
  
  深圳大学材料学院深圳市特种功能材料重点实验室,广东深圳,518060
- 作者简介：
- 基金信息：
- DOI：
  CLC： O472.3;O482.31
- Received：25 November 2009，
  
  Revised：02 January 1900，
  
  Published Online：30 April 2010，
  
  Published：30 April 2010
- 稿件说明：
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CAO Pei-jiang, LIN Chuan-qiang, ZENG Yu-xiang, et al. Influence of Oxygen Flow Rate on the Morphology and the Optical Properties of Thin ZnO Films Grown by Pulsed Laser Deposition[J]. Chinese journal of luminescence, 2010, 31(2): 239-242.
DOI：

CAO Pei-jiang, LIN Chuan-qiang, ZENG Yu-xiang, et al. Influence of Oxygen Flow Rate on the Morphology and the Optical Properties of Thin ZnO Films Grown by Pulsed Laser Deposition[J]. Chinese journal of luminescence, 2010, 31(2): 239-242. DOI：

摘要

使用脉冲激光沉积(PLD)方法在石英(SiO

)和单晶Si(111)基底上制备了具有高

轴择优取向的ZnO薄膜。测试结果显示:在30~70 sccm氧气流量范围内

氧气流量50 sccm时制备的ZnO薄膜具有较好的结晶质量、较高的光学透过率(≥80%)、较高的氧含量(~40.71%)、较快的生长速率(~252 nm/h)和较好的发光特性:450~580 nm附近发射峰最弱

同时~378 nm附近的紫外发光峰最强

表明薄膜材料中含有较少的氧空位等缺陷。

Abstract

ZnO is an interesting wide-band-gap semiconductor material with a direct band gap of 3.37 eV at room temperature and it makes more attention to the ultraviolet (UV) optoelectronic devices

such as UV laser

optical waveguide

and exciton-related devices. Usually

an insufficient supply of oxygen in ZnO during growth precludes various applications. In order to overcome these difficulties and obtain a strong ultraviolet near band edge emission and a much weaker emission band correlated with deep-level defects

it is necessary to prepare a high-quality thin ZnO film. In this paper

different oxygen flow rates (30

50 and 70 sccm) are introduced into the vacuum chamber and the influence of oxygen flow rate to the thin film quality is studied. It can be seen that thin ZnO films with strong

-axis preferred orientation are grown on single crystal silicon (111) and quartz (SiO

) substrates by pulsed laser deposition (PLD) method. In the range of 30~70 sccm for oxygen flow rate

thin ZnO film fabricated under the condition of O

flow rate of 50 sccm has higher optical transmittance above 80%

higher O

content ~ 40.71%

higher growth rate ~252 nm

stronger ultraviolet near band edge emission and a weaker emission band correlated with deep-level defects.

关键词

Keywords

references

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Related Author

LI Xiao-ping

CAO Pei-jiang

SU Shi-chen

JIA Fang

LIU Wen-jun

ZHU De-liang

MA Xiao-cui

LV You-ming

Related Institution

School of Material Science, Shenzhen University, Shenzhen Key Laboratory of Special Functional Materials

Institute of Optoelectronic Electronic Materials and Technology, South China Normal University

大连理工大学物理系, 三束材料改性国家重点实验室

中国科学院上海硅酸盐研究所, 高性能陶瓷和超微结构国家重点实验室

吉林大学电子科学与工程学院, 集成光电子国家重点实验室, 吉林, 长春, 130023

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