Effects of Molybdenum Oxide Anode Buffer Layer on Performance of Organic Solar Cells

LI Shuang; ZHOU Xiang

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Effects of Molybdenum Oxide Anode Buffer Layer on Performance of Organic Solar Cells

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- Effects of Molybdenum Oxide Anode Buffer Layer on Performance of Organic Solar Cells
- Chinese Journal of Luminescence Vol. 31, Issue 2, Pages: 291-295(2010)
- 作者机构：
  
  中山大学光电材料与技术国家重点实验室,广东广州,510275
- 作者简介：
- 基金信息：
- DOI：
  CLC： O482.7
- Received：30 August 2009，
  
  Revised：02 January 1900，
  
  Published Online：30 April 2010，
  
  Published：30 April 2010
- 稿件说明：
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LI Shuang, ZHOU Xiang. Effects of Molybdenum Oxide Anode Buffer Layer on Performance of Organic Solar Cells[J]. Chinese journal of luminescence, 2010, 31(2): 291-295.
DOI：

LI Shuang, ZHOU Xiang. Effects of Molybdenum Oxide Anode Buffer Layer on Performance of Organic Solar Cells[J]. Chinese journal of luminescence, 2010, 31(2): 291-295. DOI：

摘要

研究了MoO

阳极缓冲层对基于CuPc/C

异质结的有机小分子太阳电池器件性能的影响。发现:MoO

阳极缓冲层略微降低了器件的短路电流、开路电压及能量转换效率;MoO

阳极缓冲层提高了器件的整流比;具有MoO

阳极缓冲层的器件在持续光照条件下连续工作20 min

其主要性能参数(如短路电流、开路电压、填充因子及能量转换效率)无明显衰减

而没有MoO

阳极缓冲层的对比器件在相同条件下连续工作20 min

其能量转换效率衰减了大约45%。研究结果表明:MoO

阳极缓冲层明显提高了基于CuPc/C

异质结的有机小分子太阳电池器件的稳定性

可能的原因主要是MoO

阳极缓冲层改善了ITO阳极和CuPc界面

抑制了因持续光照连续工作引起的界面老化

从而提高了器件的稳定性。

Abstract

Organic solar cells (OSCs) have attracted considerable attention due to their potential for low-cost and large-area solar energy conversion. A lot of work has been undertaken on the electrode buffer layer

which could improve the interface between the electrode and the organic active materials

block exciton to prevent exciton quench at the interface and increase the charge collection

leading to enhanced performance of the OSCs. In this article

the effect of molybdenum oxide (MoO

) buffer layer on the performance of the OSCs with a heterojunction of CuPc/C

was investigated. It was found that the OSCs

with a 10 nm thick MoO

anode buffer layer

showed a little smaller short current

open voltage and power conversion efficiency compared to the control devices without the MoO

anode buffer layer. However

the stability of the devices with a 10 nm thick MoO

anode buffer layer is significantly improved: under uninterrupted illumination

the fill factor

open voltage

and power conversion efficiency of the device without MoO

buffer layer decreases 45% during 20 minute continuous operating

while the fill factor

open voltage

and power conversion efficiency of the device with a 10 nm MoO

anode buffer layer keeps nearly constant

which is attributed to the suppression of the degradation of the interface between ITO and CuPc caused by the uninterrupted illumination

by inducing a MoO

buffer layer into the interface.

关键词

Keywords

references

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