Fabrication of Na-N Codoped p-type ZnO Films by RF Reactive Magnetron Sputtering and Post-annealing

LIN Lan; YE Zhi-zhen; GONG Li; BIE Xun; LU Jian-guo; ZHAO Bing-hui

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Fabrication of Na-N Codoped p-type ZnO Films by RF Reactive Magnetron Sputtering and Post-annealing

paper | 更新时间：2020-08-12

- Fabrication of Na-N Codoped p-type ZnO Films by RF Reactive Magnetron Sputtering and Post-annealing
- Chinese Journal of Luminescence Vol. 31, Issue 2, Pages: 199-203(2010)
- 作者机构：
  
  浙江大学硅材料国家重点实验室,浙江杭州,310027
- 作者简介：
- 基金信息：
- DOI：
  CLC： O472.4;O484.1
- Received：25 November 2009，
  
  Revised：02 January 1900，
  
  Published Online：30 April 2010，
  
  Published：30 April 2010
- 稿件说明：
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LIN Lan, YE Zhi-zhen, GONG Li, et al. Fabrication of Na-N Codoped p-type ZnO Films by RF Reactive Magnetron Sputtering and Post-annealing[J]. Chinese journal of luminescence, 2010, 31(2): 199-203.
DOI：

LIN Lan, YE Zhi-zhen, GONG Li, et al. Fabrication of Na-N Codoped p-type ZnO Films by RF Reactive Magnetron Sputtering and Post-annealing[J]. Chinese journal of luminescence, 2010, 31(2): 199-203. DOI：

摘要

采用射频反应磁控溅射法退火生长得到了Na-N共掺杂p-ZnO薄膜。XRD测试结果表明

退火前后均得到

轴择优取向的ZnO薄膜。Hall测试结果表明:退火后薄膜的电学性能明显改善

得到了p-ZnO薄膜

退火温度为450 ℃时取得最佳电学性能:室温电阻率为139.2 Ω·cm

迁移率为0.2 cm

·V

-1

·s

-1

空穴浓度为2.5×10

-3

。XPS分析表明:Na掺入ZnO中作为受主Na

而存在

N主要以N—H键的形式存在

其受主N

的作用不明显

但是否存在Na

-N

受主复合体

还需进一步的研究。

Abstract

Na-N co-doped p-type ZnO ∶ (Na

N)] thin films were prepared on glass substrates by RF reactive magnetron sputtering and post-annealing techniques in the N

O ambient. X-ray diffraction (XRD) measurements showed that all films possessed a good crystallinity with

-axis preferential orientation. After annealing

the intensity of the (002) diffraction peak and the value of 2

increase and the FWHM decreases. Hall measurements showed that the electrical properties of ZnO ∶ (Na

N) films were improved after annealing and the p-type behavior was realized. The film annealed at 450 ℃ showed the lowest resistivity of 139.2 Ω·cm with a Hall mobility of 0.2 cm

·V

-1

·s

-1

and a carrier concentration of 2.5×10

-3

. XPS measurements showed that Na

acceptor in ZnO ∶ (Na

N) is responsible for the p-type conductivity of the ZnO ∶ (Na

N). In addition

Na-N complex may exist in the films

which acts as acceptor. Detailed investigation is now in progress.

关键词

Keywords

references

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