Effect of Au Buffer Layer on the Structure of ZnO Films Grown on Quartz Substrate

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Effect of Au Buffer Layer on the Structure of ZnO Films Grown on Quartz Substrate

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- Effect of Au Buffer Layer on the Structure of ZnO Films Grown on Quartz Substrate
- Chinese Journal of Luminescence Vol. 31, Issue 2, Pages: 219-222(2010)
- 作者机构：
  
  电子科技大学电子薄膜与集成器件国家重点实验室,四川成都,610054
- 作者简介：
- 基金信息：
- DOI：
  CLC： O472.3;O482.3
- Received：02 November 2009，
  
  Revised：2010-1-9，
  
  Published：2010
- 稿件说明：
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李宁, 陈金菊, 邓宏. 石英衬底上Au缓冲层对ZnO薄膜微结构的影响[J]. 发光学报, 2010,31(2): 219-222

LI Ning, CHEN Jin-ju, DENG Hong. Effect of Au Buffer Layer on the Structure of ZnO Films Grown on Quartz Substrate[J]. Chinese Journal of Luminescence, 2010,31(2): 219-222
李宁, 陈金菊, 邓宏. 石英衬底上Au缓冲层对ZnO薄膜微结构的影响[J]. 发光学报, 2010,31(2): 219-222 DOI：

LI Ning, CHEN Jin-ju, DENG Hong. Effect of Au Buffer Layer on the Structure of ZnO Films Grown on Quartz Substrate[J]. Chinese Journal of Luminescence, 2010,31(2): 219-222 DOI：

摘要

采用单源化学气相沉积(SSCVD)法，在石英衬底上以Au为缓冲层，Zn

4

(OH)

2

(O

2

CCH

3

)

6

2H

2

O为固相源制备ZnO薄膜。SEM和XRD测试ZnO薄膜的微结构，结果表明：相对于SiO

2

衬底上生长的ZnO薄膜，Au/SiO

2

衬底上生长的ZnO薄膜具有较好的结晶质量和表面平整度；对制备ZnO薄膜的衬底温度进行了工艺优化，结果表明：500℃时制备的ZnO薄膜颗粒大小均匀，结晶质量较好；通过荧光光谱仪对Au/SiO

2

衬底上的ZnO薄膜进行光致发光(PL)谱测试，ZnO薄膜在400nm出现紫光发射峰，而没有出现与缺陷相关的深能级发射峰，表明ZnO薄膜具有较好的结晶质量。

Abstract

Taking [Zn

4

(OH)

2

(O

2

CCH

3

)

6

2H

2

O] as solid sources

ZnO thin films were deposited on quartz and gold-plated quartz substrates by SSCVD technique at normal pressure. The structure and morpho-logy of the samples was characterized by scanning electron microscope (SEM) and X-ray diffraction (XRD)

respectively

while the optical properties were estimated by photoluminescence(PL) spectra. The results showed that the ZnO thin films with Au buffer layer is of high crystallinic qualities and is highly

c

-axis oriented. The prepared ZnO thin films on gold-plated quartz substrates at 500 ℃ are found to be compact and uniform

with better crystallinic qualities. A strong band edge emission in the PL spectra associated with the free exciton emission is observed at about 400 nm

while other emissions related to specific defects could be negligible compared with the intensive UV emission

which indicated that the ZnO thin films has low concentration of defects and high crystal qualities.

关键词

Keywords

references

Jason B Baxter, Wu Feng, Eray S Aydil. Growth mechanism and characterization of zinc oxide hexagonal columns [J]. Appl. Phys. Lett., 2003, 83(18):3797-3799.[2] Zu P, Tang Z K, Wong G K L, et al. Ultraviolet spontaneous and stimulated emissions from ZnO microcrystallite thin films at room temperature [J]. Sol. Stat. Commun., 1997, 103(8):459-463.[3] Vanheusden K, Seager C H, Warren W L, et al. Correlation between photoluminescence and oxygen vacancies in ZnO phosphors [J]. Phys. Stat. Sol.(b), 1996, 68(3):403-405.[4] Cui Junpeng, Duan Yao, Wang Xiaofeng, et al. ZnO film grown on Si substrate with an Au buffer layer [J]. Chin. J. Lumin.(发光学报)， 2008, 29(10):861-864 (in Chinese).[5] Vispute R D, Talyansky V, Choopun S, et al. Heteroepitaxy of ZnO on GaN and its implications for fabrication of hybrid optoelectronic devices [J]. Appl. Phys. Lett., 1998, 73(3):349-351.[6] Lan Zhenli, Zhang Xiqing, Yang Guangwu, et al. Structural and optical characterization of ZnO thin films grown by plasma-assisted molecular beam epitaxy [J]. Spectroscopy and Spectral Analysis (光谱学与光谱分析)， 2008, 28(2):253-255 (in Chinese).

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