Optical Properties of Cu-doped Thin ZnO Films

QU Sheng-wei; TANG xin; LU Hai-feng; LIU Ming; ZHANG Qing-yu

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Optical Properties of Cu-doped Thin ZnO Films

paper | 更新时间：2020-08-12

- Optical Properties of Cu-doped Thin ZnO Films
- Chinese Journal of Luminescence Vol. 31, Issue 2, Pages: 204-208(2010)
- 作者机构：
  
  1. 大连理工大学三束材料改性重点实验室, 辽宁大连 116024
  2. 中国科学院计算机网络信息中心, 北京 100080
- 作者简介：
  
  [ "" ]
- 基金信息：
- DOI：
  CLC： O472.3;O482.31
- Received：10 December 2009，
  
  Revised：1900-1-2，
  
  Published Online：30 April 2010，
  
  Published：30 April 2010
- 稿件说明：
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QU Sheng-wei, TANG xin, LU Hai-feng, et al. Optical Properties of Cu-doped Thin ZnO Films[J]. Chinese Journal of Luminescence, 2010, 31(2): 204-208.
DOI：

QU Sheng-wei, TANG xin, LU Hai-feng, et al. Optical Properties of Cu-doped Thin ZnO Films[J]. Chinese Journal of Luminescence, 2010, 31(2): 204-208. DOI：

摘要

采用射频反应磁控溅射方法

在Si(100)和石英基片上使用双靶溅射的方法制备了Cu掺杂ZnO 薄膜。利用X射线衍射、透射光谱和光致发光光谱分析了薄膜的晶体结构及光学性质

并与密度泛函理论计算的结果进行了对比。研究结果显示:Cu掺杂ZnO薄膜均具有高的

轴择优取向

无Cu及其氧化物相关相析出

掺杂对晶格参数的影响较小

与理论计算结果一致。Cu掺杂显著改变了ZnO薄膜在近紫外及可见光波段的吸收特性

其光学带隙随着Cu掺杂量的增加有所减小

带隙宽度的变化趋势与理论结果有着很好的一致性。Cu掺杂显著降低了ZnO薄膜的发光效率

具有明显的发光猝灭作用

但并不影响光致发光的发光峰位。说明Cu掺杂导致的吸收特性的改变可能与杂质能级有关

这与能带结构计算发现的Cu-3d电子态位于价带顶附近的禁带中是一致的。

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