Electrical and Optical Properties of Li-doped ZnO Nanorods

WANG Xiang-hu; LI Rong-bin; CONG Chun-xiao

doi:null

您当前的位置：

首页 >

文章列表页 >

Electrical and Optical Properties of Li-doped ZnO Nanorods

paper | 更新时间：2020-08-12

- Electrical and Optical Properties of Li-doped ZnO Nanorods
- Chinese Journal of Luminescence Vol. 31, Issue 2, Pages: 243-247(2010)
- 作者机构：
  
  1. 中国科学院激发态物理重点实验室长春光学精密机械与物理研究所,吉林长春,130033
  2. 上海电机学院机械学院上海,200245
- 作者简介：
- 基金信息：
- DOI：
  CLC： O472.3;O482.31
- Received：25 November 2009，
  
  Revised：02 January 1900，
  
  Published Online：30 April 2010，
  
  Published：30 April 2010
- 稿件说明：
移动端阅览
WANG Xiang-hu, LI Rong-bin, CONG Chun-xiao. Electrical and Optical Properties of Li-doped ZnO Nanorods[J]. Chinese journal of luminescence, 2010, 31(2): 243-247.
DOI：

WANG Xiang-hu, LI Rong-bin, CONG Chun-xiao. Electrical and Optical Properties of Li-doped ZnO Nanorods[J]. Chinese journal of luminescence, 2010, 31(2): 243-247. DOI：

摘要

利用气相输运方法

在(111)面硅衬底上制备了名义上原子数分数为2%的Li掺杂的ZnO纳米棒(样品A)。作为比较

我们在相同的生长条件下制备了没有任何掺杂的ZnO纳米棒(样品B)。XRD分析测试表明:样品A和样品B中的ZnO纳米棒具有纤锌矿六边形结构

没有其他氧化物

例如Li

O。Hall效应测量表明:样品A导电类型为p型

空穴载流子浓度为6.72×10

-3

空穴载流子迁移率为2.46 cm

·V

-1

·s

-1

。样品B为n型

电子载流子浓度为7.16×10

-3

电子载流子迁移率为4.73 cm

·V

-1

·s

-1

。低温光致发光光谱测试表明

样品A和样品B发光峰明显的区别是位于3.351 eV(样品B)和 3.364 eV(样品A)处。根据文献报道

在没有掺杂的ZnO中

3.364 eV发光峰源于施主束缚激子发光。通过变温光致发光光谱的测试

证明了在样品A中

位于3.351 eV的发光峰源于受主束缚激子发光

其光学受主能级位于价带顶142 meV处。

Abstract

Li-doped ZnO nanorods was grown on n-Si (111) substrate by chemical vapor deposition. XRD pattern showed that the nanorods are pure wurtzite ZnO of hexagonal crystal structure without any other oxide

such as Li

O. Hall effect experiment under Van der Pauw configuration showed that Li-doped ZnO nanorods behave the p-type conductivity with hole concentration of 6.72×10

-3

and a Hall mobility of 2.46 cm

·V

-1

·s

-1

. A neutral acceptor- bound exciton emission (A°X) was confirmed by the measurements of temperature-dependent photoluminescence (PL) spectra. The optical acceptor energy level is calculated to be about 142 meV.

关键词

Keywords

references

. Meng X Q, Shen D Z, Zhao D X, et al. Photoluminescence properties of catalyst-free growth of needle-like ZnO nanowires [J]. Nanotechnology, 2005, 16 (4):609-612.

. Hong W K, Sohn J I, Hwang D K, et al. Tunable electronic transport characteristics of surface-architecture-controlled ZnO nanowire field effect transistors [J]. Nano Lett., 2008, 8 (3):950-956.

. Unalan H E, Hiralal P, Rupesinghe N, et al. Rapid synthesis of aligned zinc oxide nanowires [J]. Nanotechnology, 2008, 19 (25):255608-1-5.

. Fang Guojia, Wang Mingjun, Liu Nishuang, et al. Vertically aligned and patterned growth, photo luminescence and field electron emission properties of ZnO nanowires [J]. Chin. J. Lumin. (发光学报), 2008, 29 (3):421-424 (in Chinese).

. Lo B, Chang J Y, Ghule A V, et al. Seed-mediated fabrication of ZnO nanorods with controllable morphology and photoluminescence properties [J]. Scr. Mater., 2006, 54 (3):411-415.

. Park S S, Lee J M, Sung J K, et al. ZnO nanotips and nanorods on carbon nanotube/Si substrates: anomalous p-type like optical properties of undoped ZnO nanotips [J]. Nanotechnology, 2008, 19 (24):245708-1-5.

. Li G M, Wang X C, Wang Y H, et al. Synthesis and field emission properties of ZnCdO hollow micro-nano spheres [J]. Phys., 2008, 40 (8):2649-2653.

. Xu Hongtu, Ning Yuehui, Liang Jiaqi, et al. The structural and optical properties of ZnO nano-spheres synthesized via solvothermal method [J]. Chin. J. Lumin. (发光学报) , 2008, 29 (3):513-518 (in Chinese).

. Xiao J, Zhang X X, Zhang G M, Field emission from zinc oxide nanotowers: the role of the top morphology [J]. Nanotechnology, 2008, 19 (29):295706-1-6.

. Wang Y G, Sakurai M, Aono M. Mass production of ZnO nanotetrapods by a flowing gas phase reaction method [J]. Nanotechnology, 2008, 19 (29):245610-1-5.

. Lao C S, Gao P X, Yang R S, et al. Formation of double-side teethed nanocombs of ZnO and self-catalysis of Zn-terminated polar surface [J]. Chem. Phys. Lett. , 2006, 417 (4-6):358-362.

. Ma Shufang, Liang Jian, Wang Lianhong, et al. Study on preparation and photoluminescence properties of ZnO hexagonal nanotubes [J]. Chin. J. Lumin. (发光学报) , 2008, 29 (1):182-185 (in Chiense).

. Wang X H, Yao B, Shen D Z, et al. Electrical and optical characteristics of Li-doped ZnO [J]. Chin. J. Lumin. (发光学报) , 2006, 27 (6):945-948 (in Chinese).

. Zeng Y J, Ye Z Z, Xu W Z, et al. Dopant source choice for formation of p-type ZnO ∶ Li acceptor [J]. Appl. Phys. Lett., 2006, 88 (6):062107-1-3.

. Han X, Wang G, Wang Q. Ultraviolet lasing and time-resolved photoluminescence of well-aligned ZnO nanorod arrays [J]. Appl. Phys. Lett., 2005, 86 (22):223106-1-3.

. Zeng Y J , Ye Z Z, Lu J G, et al. Identification of acceptor state in Li-doped p-type ZnO thin films [J]. Appl. Phys. Lett., 2006, 89 (4):0421016-1-3.

Views

158

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Luminescence Properties of all Inorganic Perovskite CsPbBr₃ Quantum Dots and Film Synthesized by Cesium Acetate

Nitrogen-plasma Passivation of GaAs Semiconductor Surface

Experimental Research on Hall Effect of Graphene at Room-temperature

Van der Pauw Method in the Test of ZnO Film

Related Author

Bao-lin ZHANG

Guo-guang WU

Xin DONG

Yuan-tao ZHANG

Xue MA

Li-jin HAN

CAO Xi-wen

BO Bao-xue

Related Institution

State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University

State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology

Institute of Photonics and Photon-Technology, Northwest University, Shannxi Important Laboratory for Photoelectric and Functional Materials, Provincical Cultivation Base of State Improtant Laboratory, Xi'an 710069, China

Structure Research Laboratory, Chinese Academy of Sciences

Department of Physics, University of Science and Technology of China

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰