The Impact of Stripe Width in the Variable Stripe Length Method on GaN Gain Measurements

WANG Wei; YANG Zi-wen; YU Tao; XING Bing; WANG Lei; LI Rui; DU Wei-min; HU Xiao-dong

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The Impact of Stripe Width in the Variable Stripe Length Method on GaN Gain Measurements

paper | 更新时间：2020-08-12

- The Impact of Stripe Width in the Variable Stripe Length Method on GaN Gain Measurements
- Chinese Journal of Luminescence Vol. 31, Issue 1, Pages: 86-90(2010)
- 作者机构：
  
  北京大学物理学院北京,100871
- 作者简介：
- 基金信息：
- DOI：
  CLC： O472.3;TN248.4
- Received：25 January 2009，
  
  Revised：02 January 1900，
  
  Published Online：20 February 2010，
  
  Published：20 February 2010
- 稿件说明：
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WANG Wei, YANG Zi-wen, YU Tao, et al. The Impact of Stripe Width in the Variable Stripe Length Method on GaN Gain Measurements[J]. Chinese journal of luminescence, 2010, 31(1): 86-90.
DOI：

WANG Wei, YANG Zi-wen, YU Tao, et al. The Impact of Stripe Width in the Variable Stripe Length Method on GaN Gain Measurements[J]. Chinese journal of luminescence, 2010, 31(1): 86-90. DOI：

摘要

研究了光学变条长实验中条的宽度对半导体激光器光增益测量的影响

提出利用光刻溅射处理样品来严格控制泵浦条的宽度

并详细研究了泵浦条宽度与样品增益及饱和长度关系。实验表明:泵浦条宽度越窄

饱和长度越长

但测得的增益系数有所减小。本文利用非平衡载流子扩散模型对此现象进行了解释。

Abstract

In this paper

a method strictly controlling the width of pump stripe in the measurement of variable stripe length (VSL) method is present. For the gain measurements

we deal samples with lithography and sputtering

so that three different wide stripes

2.6

6.2 and 10.5 μm

are exposed separately on three samples

besides the rest parts are covered by 100 nm thick aluminum coating to strictly control the width of the pump stripe. We specially noticed that the pump stripes exposed are all along the same crystal orientation

in order to avoid the influence of different crystal orientation on optical gain. Using the VSL method

we studied the optical gain and saturation semiconductor laser with different pump stripe width. The gain spectra were discussed for three different pump stripe widths of 2.6

6.2 and 10.5 μm

respectively. An increase of the modal gain and the decrease of saturation length with increasing stripe width were observed for most wavelengths on the amplified spontaneous emission spectrum through our experiments. The phenomenon that the gain changes with the pump stripe width could be due to the carrier diffusion. The carrier diffusions impact on different width pump stripe was discussed by theoretical calculation. The conclusion indicated that diffusion leads to lower non-equilibrium carrier concentration in a narrower pump stripe

and the modal gain decreases. To obtain effective optical gain and the long saturation length

experiments in many papers suggested making the pump stripe as narrow as possible

but this approach did not take the impact of diffusion into account. Our experiments showed that the diffusion can not be ignored when the stripe is narrow. Based on our experiments and calculation

pump stripe width is an important parameter related to the optical gain in VSL. We can choose an appropriate width of the pump stripe according to the needs when measuring the optical gain and its spectrum through the variable stripe length method.

关键词

Keywords

references

. Xie Lunjun, Chen Guangde, Zhu Youzhang, et al. Different luminescence behavior between the surface and edge of ZnO film [J]. Chin. J. Lumin.(发光学报), 2006, 27 (6):910-915 (in Chinese).

. Wang Mingyue, Yuan Jinshe, Yu Guohao. Correlation of the yellow photoluminescence and excitation sources of GaN film grown by MOVPE [J]. Chin. J. Lumin. (发光学报), 2009, 30 (1):73-76 (in Chinese).

. Zheng Weimian, Lu Yingbo, Song Shumei, et al. Photolumcnescence study of the acceptor binding energy in GaAs/AlAs quantum wells [J]. Chin. J. Lumin. (发光学报), 2008, 29 (1):156-160 (in Chinese).

. Wu Dianzhong, Wang Wenxin, Yang Chengliang, et al. InAs quantum dots with InGaAs caplayer infrared detector grown by MBE [J]. Chin. J. Lumin. (发光学报), 2009, 30 (2):209-213 (in Chinese).

. Yi Juemin, Li Hongbo, Tang Fangqiong, et al. White lighting LEDs from InGaN blue LEDs and CdTe nanocrystals [J]. Chin. J. Lumin. (发光学报), 2008, 29 (6):1071-1075 (in Chinese).

. Hakki B W, Paoli T L. A way to measure the gain of semiconductor [J]. J. Appl. Phys., 1973, 44 :4413-4415.

. Lange C, Chatterjee S, Schlichenmaier C, et al. Transient gain spectroscopy of (GaIn)As quantum wells: Experiment and microscopic analysis [J]. Appl. Phys. Lett., 2007, 90 (25):251102-1-3.

. Kawakami Y, Narukawa Y, Omae K, et al. Dynamics of optical gain in InxGa1-xN multi-quantum-well-based laser diodes [J]. Appl. Phys. Lett., 2000, 77 (14):2151-2153.

. Lange C, Schwalm M, Chatterjee S, et al. The variable stripe-length method revisited: Improved analysis [J]. Appl. Phys. Lett., 2007, 91 (19):191107-1-4.

. Penzkofer A, Holzer W, Tillmann H, et al. Leaky-mode emission of luminescent thin films on transparent substrates [J]. Opti.Commun., 2004, 229 (1-6):279-290.

. Vehse M, Meinertz J, Lange O, et al. Analysis of gain saturation behavior in GaN based quantum well lasers [J]. Phys. Stat. Sol. (c), 2002, 1 (1):43-50.

. Swietlik T, Franssen G, Skierbiszewski C, et al. Comparison of gain in group-Ⅲ-nitride laser structures grown by metal-organic vapour phase epitaxy and plasma-assisted molecular beam epitaxy on bulk GaN substrates [J]. Semicond. Sci. Technol., 2007, 22 (7):736-741.

. Mickevi iusa J, Tamulaitis G, Shur M S, et al. Saturated gain in GaN epilayers studied by variable stripe length technique [J]. J. Appl. Phys., 2006, 99 (10):103513-1-6.

. Vehse M, Michler P, Gutowski J, et al. Influence of composition and well-width fluctuations on optical gain in (In,Ga)N multiple quantum wells [J]. Semicond., Sci. Technol., 2001, 16 (5):406-412.

. Chii-Chang Chen, Kun-Long Hsieh, Jinn-Kong Sheu, et al. Dependence of optical gain on direction of optically pumped cavity on (0001)-plane for InGaN/GaN multiple quantum well structure [J]. Materials Science and Engineering (b),2002, 93 (1-3):28-30.

. Kyhm K, Taylor R A, Ryan J F, et al. Analysis of gain saturation in In0.02Ga0.98N/In0.16Ga0.84N multiple quantum wells [J]. Appl. Phys. Lett., 2001, 79 (21):3434-3436.

. Frankowsky G, Steuber F, Harle V, et al. Optical gain in GaInN/GaN heterostructures [J]. Appl. Phys. Lett., 1996, 68 (26):3746-3748.

. Mohs G, Aoki T, Nagai M, et al. Failure of the modal gain model in a GaN based laser diode [J]. Sol. Stat. Commun., 1997, 104 (11):643-648.

. Enke L, Bingsheng Z H, Jinsheng L. Physics of Semiconductors [M]. 7th edition, Beijing: China Publishing House of Electronics Industry, 2008, 145-178 (in Chinese).

. Chernyak L, Osinsky A, Schulte A. Minority carrier transport in GaN and related materials [J]. Sol. Stat. Electron., 2001, 45 (9):1687-1702.

. Yariv A. Quantum Electronics [M]. 3rd edition, San Francisco: John Wiley & Sons, 1989, 560-581.

. Michler P, Lange O, Vehse M, et al. Gain saturation in (In,Ga)N/GaN/(Al,Ga)N laser structures [J]. Phys. Stat. Sol. (a), 2000, 180 (1):391-396.

. Vehse M, Michler P, Lange O, et al. Optical gain and saturation in nitride-based laser structures [J]. Appl. Phys. Lett., 2001, 79 (12):1763-1765.

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