Structural Design of Vertical-external-cavity Surface-emitting Semiconductor Laser with 920 nm

LIANG Xue-mei; LU Jin-kai; CHENG Li-wen; QIN Li; NING Yong-qiang; WANG Li-jun

doi:null

您当前的位置：

首页 >

文章列表页 >

Structural Design of Vertical-external-cavity Surface-emitting Semiconductor Laser with 920 nm

paper | 更新时间：2020-08-12

- Structural Design of Vertical-external-cavity Surface-emitting Semiconductor Laser with 920 nm
- Chinese Journal of Luminescence Vol. 31, Issue 1, Pages: 79-85(2010)
- 作者机构：
  
  1. 中国科学院研究生院北京,100049
  2. 空军航空大学,吉林长春,130022
  3. 中国科学院长春光学精密机械与物理研究所,吉林长春,130033
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN248.4
- Received：25 August 2009，
  
  Revised：02 January 1900，
  
  Published Online：20 February 2010，
  
  Published：20 February 2010
- 稿件说明：
移动端阅览
LIANG Xue-mei, LU Jin-kai, CHENG Li-wen, et al. Structural Design of Vertical-external-cavity Surface-emitting Semiconductor Laser with 920 nm[J]. Chinese journal of luminescence, 2010, 31(1): 79-85.
DOI：

LIANG Xue-mei, LU Jin-kai, CHENG Li-wen, et al. Structural Design of Vertical-external-cavity Surface-emitting Semiconductor Laser with 920 nm[J]. Chinese journal of luminescence, 2010, 31(1): 79-85. DOI：

摘要

设计并优化了一种用808 nm的大功率激光二极管为抽运光源

0.09

0.91

As量子阱结构为增益介质的920 nm光抽运半导体垂直外腔面发射激光器。运用有限元方法

对激光器的电特性方程和光特性方程求自洽解

计算了器件各种特性参量。分析了单个周期内不同阱的个数(1

2和3)、不同阱深、不同垒宽、不同非吸收层组分、不同非吸收层尺寸条件下

器件性能的改变

特别是模式、阈值和光-光转换效率的改变

从而选择一个最佳的结构。

Abstract

A vertical-external-cavity surface-emitting 920 nm semiconductor laser (OP-VECSEL) with active region of In

0.09

0.91

As quantum well (QW) system pumped by 808 nm laser diode module was constructed and optimized. By the finite element method

self-consistent solutions of electronic and optical equations of the semiconductor laser were realized and the characteristic parameters of OP-VECSEL were calculated. The performances of the especial mode in device

the threshold and the optical-optical conversion efficiency were analyzed by dealing with different structure parameters

including number of QWs (1

2 and 3) in one period

QW depth

width and component of barrier and dimension of the non-absorption layer. The best structure of the laser was chosen.

关键词

Keywords

references

. Kuznestov M, Harkimi F, Sprague A R, et al. Design and characteristics of high-power(＞0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams [J]. IEEE J. Sel. Top. Quantum Electron., 1999, 5 (3):561-573.

. Chillar J, Butterworth S, Zeitschel A, et al. High power optically pumped semiconductor lasers [J]. SPIE, 2004, 5332 :143-150.

. Fan L, Fallahi M, Hader J, et al. Over 3 W high-efficiency vertical-external-cavity surface-emitting lasers and application as efficient fiber laser pump sources [J]. Appl. Phys. Lett., 2005, 86 (21):211116-1-3.

. Cheng Liwen Liang Xuemei, Qin Li, et al. Theoretical analysis of key parameters of 980 nm optically pumped semiconductor vertical external cavity surface emitting laser [J]. Chin. J. Lumin. (发光学报), 2008, 29 (4):713-715 (in Chinese).

. Peng Biao, Ning Yongqiang, Qin Li, et al. Polarization characteristics of 980 nm high power vertical cavity surface emitting laser [J]. Chin. J. Lumin.(发光学报), 2008, 29 (5):845-850 (in Chinese).

. Ma Qiang, Tian Zhenhua, Wang Zhenfu, et al. A theoretical model of high power VCSEL based on the thermal-offset-current [J]. Chin. J. Lumin.(发光学报), 2009, 30 (4):463-466 (in Chinese).

. Aschwanden A, Lorenser D, Unold H J, et al. 10 GHz passively mode-locked external-cavity semiconductor laser with 1.4 W average output power [J]. Appl. Phys. Lett., 2005, 86 (13):131102-1-3.

. Hastie J, Calvez S, Dawson M D. High power CW red VECSEL with linearly polarized TEM00 output beam [J]. Optics Exp., 2005, 13 (1):77-81.

. Chillar J L A, Zhou H, Weiss E, et al. Blue and green optically-pumped semiconductor lasers for display [J]. SPIE, 2005, 5740 :41-47.

. Chen Weiyou, Zhang Yejin, Liu Shiyong. Computer Aided Design and Analysis of Semiconductor Laser [M]. Changchun: Publishing House of Jilin University, 2003,1-10 (in Chinese).

. Jiang Jianping. Semiconductor Laser [M]. Beijing: Publishing House of Electronics Industry, 2000,109-110 (in Chinese).

. Ongstad A P, Gallant D J, Dente G C. Carrier lifetime saturation in InGaAs single quantum wells [J]. Appl. Phys. Lett., 1995, 66 (20):2730-2732.

Views

271

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Theoretical Analysis of Key Parameters of 980nm Optically Pumped Semiconductor Vertical External Cavity Surface Emitting Laser

Design and Research of High Tuning Efficiency V-cavity Tunable Semiconductor Laser

Thermal Impact of High Power Semiconductor Laser with Voids in Solder Layer

Design of A Novel Hybrid Surface Plasmonic Nanolaser

Research Progress of GaN HEMT Device Structure

Related Author

CHENG Li-wen

LIANG Xue-mei

QIN Li

WANG Xiang-peng

SHENG Yang

NING Yong-qiang

WANG Li-jun

Jian-jun HE

Related Institution

Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences

Graduate School of Chinese Academy of Sciences

Crosslight Software China

State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology

School of Opto-Electronic Engineering, Changchun University of Science and Technology

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰