Low-temperature Growth of ZnO Nanowire Array on Glass Substrate by Chemical Vapor Deposition

XIA Wen-gao; CHEN Jin-ju; DENG Hong

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Low-temperature Growth of ZnO Nanowire Array on Glass Substrate by Chemical Vapor Deposition

paper | 更新时间：2020-08-12

- Low-temperature Growth of ZnO Nanowire Array on Glass Substrate by Chemical Vapor Deposition
- Chinese Journal of Luminescence Vol. 31, Issue 2, Pages: 258-260(2010)
- 作者机构：
  
  电子科技大学电子薄膜与集成器件国家重点实验室,四川成都,610054
- 作者简介：
- 基金信息：
- DOI：
  CLC： O484.1
- Received：20 November 2009，
  
  Revised：1900-1-2，
  
  Published Online：30 April 2010，
  
  Published：30 April 2010
- 稿件说明：
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XIA Wen-gao, CHEN Jin-ju, DENG Hong. Low-temperature Growth of ZnO Nanowire Array on Glass Substrate by Chemical Vapor Deposition[J]. Chinese Journal of Luminescence, 2010, 31(2): 258-260.
DOI：

XIA Wen-gao, CHEN Jin-ju, DENG Hong. Low-temperature Growth of ZnO Nanowire Array on Glass Substrate by Chemical Vapor Deposition[J]. Chinese Journal of Luminescence, 2010, 31(2): 258-260. DOI：

摘要

采用化学气相沉积(CVD)法在镀Cr(20 nm)的玻璃衬底上

低温制备了ZnO纳米线阵列。利用扫描电子显微镜(SEM)和X射线衍射(XRD)对样品的表面形貌和微结构进行了分析表征。结果表明:源分解温度1 350 ℃

衬底温度450~500 ℃

氩气流量为35 sccm时

ZnO纳米线在玻璃衬底上呈现有序生长;XRD谱图中只观测到ZnO(002)衍射峰。表明制备的纳米线阵列具有高度

轴择优取向生长特性和较高的结晶质量。

Abstract

Well-aligned ZnO nanowire arrays were synthesized on Chromium (20 nm) coated glass substrates via chemical vapor deposition (CVD) method in a low temperature. The surface morphology and microstructure of products was characterized by scanning electron microscope (SEM) and X-ray diffraction (XRD). Well-aligned ZnO nanowire arrays were prepared on glass in SEM images when the reaction temperature of source come up to 1 350 ℃

the substrate temperature maintains about 450~500 ℃

and the argon gas flow rate is 35 sccm. The presence of only (002) diffraction peak in the XRD patterns indicated that ZnO nanowire arrays exhibits

-axis preferred orientation and good crystal quality.

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references

. Look D C. Recent advance in ZnO material and devices [J]. Materials Science and Engineering B, 2001, 80 (1-3):383-387.

. Fang Guojia, Wang Mingjun, Liu Nishuang, et al. Vertically aligned and patterned growth, photoluminescence and field electron emission properties of ZnO nanowires [J]. Chin. J. Lumin. (发光学报), 2008, 29 (3):421-424 (in Chinese).

. Yu Dongqi, Li Jiao, Hu Hao, et al. Structural and optical properties of ZnO nanoneedle grown by catalyst-free synthesis [J]. Chin. J. Lumin. (发光学报), 2008, 29 (3):519-522 (in Chinese).

. Koide N, Han L Y. Measuring methods of cell performance of dye-sensitized solar cells [J]. Review of Scientific Instruments, 2004, 75 (9):2828-2831.

. Kashyout A B, Soliman M, ElGamal M, et al. Preparation and characterization of nano particles ZnO films for dye-sensitized solar cells [J]. Materials Chem. Phys., 2005, 90 (2-3):230-233.

. Law M, Greene L E, Johnson J C, et al. Nanowire dye-sensitized solar cells [J]. Nat. Mater., 2005, 4 (6):455-459.

. Hosono E, Fujihara S, Honma I, et al. The fabrication of an upright-standing zinc oxide nanosheet for use in dye-sensitized solar cells [J]. Adv. Mater., 2005, 17 (17):2091-2094.

. Tang Bin, Deng Hong. Preparation and growth mechanism of well-aligned ZnO nanowires by chemical vapor deposition[J]. J. Synthetic Crystals (人工晶体学报), 2007, 36 (2):59-62 (in Chinese).

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