Characterization and Analysis on the Optical Properties of InxGa1-xN/InyGa1-yN Multiple Quantum Well Structures

GUO Hong-ying; PAN Ding-zhen; FAN Jun-qing; MA Xu; DAI Zhen-hong; SUN Yuan-ping

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Characterization and Analysis on the Optical Properties of In_xGa_1-xN/In_yGa_1-yN Multiple Quantum Well Structures

paper | 更新时间：2020-08-12

- Characterization and Analysis on the Optical Properties of In_xGa_1-xN/In_yGa_1-yN Multiple Quantum Well Structures
- Chinese Journal of Luminescence Vol. 30, Issue 6, Pages: 797-801(2009)
- 作者机构：
  
  烟台大学光电信息科学技术学院,山东烟台,264005
- 作者简介：
- 基金信息：
- DOI：
  CLC： O482.31
- Received：22 January 2009，
  
  Revised：02 January 1900，
  
  Published Online：30 December 2009，
  
  Published：30 December 2009
- 稿件说明：
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GUO Hong-ying, PAN Ding-zhen, FAN Jun-qing, et al. Characterization and Analysis on the Optical Properties of In_xGa_1-xN/In_yGa_1-yN Multiple Quantum Well Structures[J]. Chinese journal of luminescence, 2009, 30(6): 797-801.
DOI：

GUO Hong-ying, PAN Ding-zhen, FAN Jun-qing, et al. Characterization and Analysis on the Optical Properties of In_xGa_1-xN/In_yGa_1-yN Multiple Quantum Well Structures[J]. Chinese journal of luminescence, 2009, 30(6): 797-801. DOI：

摘要

利用MOCVD方法在蓝宝石衬底上生长了In

1-x

N/In

1-y

N多量子阱结构外延层

并用变温光致发光(PL)光谱、选择激发光谱以及激发(PLE)光谱等手段研究了该结构的量子效率、多峰效应的起源以及峰位随温度变化等信息。变温PL光谱的结果表明:在温度从30 K变化到300 K时

其峰值强度只下降了1.36倍且发光波长发生了蓝移。通过选择激发光谱证明了其发光峰位的独立性。PLE结果表明了GaN和势垒层的Stokes位移很小

但是In

1-x

N阱层的Stokes位移变化很大。同时

提出了一种可同时获得多个吸收边的数据处理方法。

Abstract

The In

1-x

N/In

1-y

N multiple quantum well structures were grown on sapphire substrate by metal-organic chemical vapor deposition (MOCVD). The quantum efficiency

multi-emission peaks effects and peak-shift information were observed by temperature dependent photoluminescence (PL) spectra

selective excitation PL spectra and PL excitation spectra. The temperature dependent PL spectra showed that the intensity of the main emission peaks decreased only by a factor of 1.36 and peak position has a blue-shift when temperature increases in 30~300 K. Selective excitation PL spectra showed that every peak appeared in PL spectra is separate. The PLE result shows a small Stokes shift for GaN and barrier layer while it is larger for the well layers. A fitting method was also suggested to obtain several absorption edges simultaneously.

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Keywords

references

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