Effect of Structure Parameters on the Performances of GaN Schottky Barrier Ultraviolet Photodetectors and Device Design

ZHOU Mei; ZHAO De-gang

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Effect of Structure Parameters on the Performances of GaN Schottky Barrier Ultraviolet Photodetectors and Device Design

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- Effect of Structure Parameters on the Performances of GaN Schottky Barrier Ultraviolet Photodetectors and Device Design
- Chinese Journal of Luminescence Vol. 30, Issue 6, Pages: 824-831(2009)
- 作者机构：
  
  1. 中国农业大学理学院应用物理系北京,100083
  2. 中国科学院半导体研究所集成光电子学国家重点实验室, 北京 100083
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN364
- Received：19 February 2009，
  
  Revised：02 January 1900，
  
  Published Online：30 December 2009，
  
  Published：30 December 2009
- 稿件说明：
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ZHOU Mei, ZHAO De-gang. Effect of Structure Parameters on the Performances of GaN Schottky Barrier Ultraviolet Photodetectors and Device Design[J]. Chinese journal of luminescence, 2009, 30(6): 824-831.
DOI：

ZHOU Mei, ZHAO De-gang. Effect of Structure Parameters on the Performances of GaN Schottky Barrier Ultraviolet Photodetectors and Device Design[J]. Chinese journal of luminescence, 2009, 30(6): 824-831. DOI：

摘要

研究了GaN肖特基结构(n

-GaN /n

-GaN)紫外探测器的结构参数对器件性能的影响机理。模拟计算结果表明:提高肖特基势垒高度和减小表面复合速率

不仅可以增加器件的量子效率

而且可以极大地减小器件的暗电流;适当地增加n

-GaN层厚度和载流子浓度可以提高器件的量子效率

但减小n

-GaN层的载流子浓度却有利于减小器件的暗电流。我们针对实际应用的需要

提出了一个优化器件结构参数的设计方案

特别是如果实际应用中对器件的量子效率和暗电流都有较高的要求

肖特基势垒高度应该≥0.8 eV

-GaN层的厚度≥200 nm

载流子浓度1×10

-3

左右

表面复合速率＜1×10

cm/s。

Abstract

The influence of structure parameters on the performance of GaN Schottky barrier (n

-GaN /n

-GaN)ultraviolet photodetectors was investigated. The simulation results indicated that the performance can be improved by increasing the Schottky barrier height and decreasing the surface recombination velocity

thus

the quantum efficiency could be enhanced and the dark current could be rapidly reduced. It was also found that the quantum efficiency can be increased by increasing the thickness or the carrier concentration of n

-GaN layer

however

the dark current can be reduced by decreasing the thickness of n

-GaN layer. A good design of GaN Schottky barrier ultraviolet photodetector is proposed. Especially for the fabrication of GaN Schottky barrier ultraviolet photodetector with high quantum efficiency and low dark current

the Schottky barrier should be higher than 0.8 eV

the thickness of n

-GaN layer should be larger than 200 nm

the carrier concentration of n

-GaN layer should be around 1×10

-3

and the surface recombination velocity should be lower than 1×10

cm/s.

关键词

Keywords

references

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