Effect of Buffer Layer Growth Temperature on Structural and Electrical Properties of In<SUB>0.82</SUB>Ga<SUB>0.18</SUB>As with Two Step Growth Technique

ZHANG Tie-min; MIAO Guo-qing; SONG Hang; JIANG Hong; LI Zhi-ming; FU Jun; YAN Li-na

doi:null

您当前的位置：

首页 >

文章列表页 >

Effect of Buffer Layer Growth Temperature on Structural and Electrical Properties of In_0.82Ga_0.18As with Two Step Growth Technique

paper | 更新时间：2020-08-12

- Effect of Buffer Layer Growth Temperature on Structural and Electrical Properties of In_0.82Ga_0.18As with Two Step Growth Technique
- Chinese Journal of Luminescence Vol. 30, Issue 6, Pages: 787-791(2009)
- 作者机构：
  
  1. 海南师范大学物理与电子工程学院,海南海口,571158
  2. 中国科学院激发态物理重点实验室长春光学精密机械与物理研究所,吉林长春,130033
- 作者简介：
- 基金信息：
- DOI：
  CLC： O472.1;O472.4
- Received：23 February 2009，
  
  Revised：02 January 1900，
  
  Published Online：30 December 2009，
  
  Published：30 December 2009
- 稿件说明：
移动端阅览
ZHANG Tie-min, MIAO Guo-qing, SONG Hang, et al. Effect of Buffer Layer Growth Temperature on Structural and Electrical Properties of In_0.82Ga_0.18As with Two Step Growth Technique[J]. Chinese journal of luminescence, 2009, 30(6): 787-791.
DOI：

ZHANG Tie-min, MIAO Guo-qing, SONG Hang, et al. Effect of Buffer Layer Growth Temperature on Structural and Electrical Properties of In_0.82Ga_0.18As with Two Step Growth Technique[J]. Chinese journal of luminescence, 2009, 30(6): 787-791. DOI：

摘要

采用低压金属有机化学气相沉积(LP-MOCVD)技术

两步生长法在InP衬底上制备In

0.82

0.18

As材料。研究缓冲层的生长温度对In

0.82

0.18

As薄膜的结构及电学性能的影响。固定外延薄膜的生长条件

仅改变缓冲层生长温度(分别为410

430

450

470 ℃)

且维持缓冲层其他生长条件不变。用拉曼散射研究样品的结构性能

测量四个样品的拉曼散射光谱

得到样品的GaAs的纵向光学(LO)声子散射峰的非对称比分别为1.53

1.52

1.39和1.76。测量样品的霍耳效应表明

载流子浓度随缓冲层生长温度变化而改变

同时迁移率也随缓冲层生长温度变化而改变。通过实验得出:缓冲层的生长温度能够影响In

0.82

0.18

As薄膜的结构及电学性能。最佳的缓冲层生长温度为450 ℃。

Abstract

0.82

0.18

As was grown by low-pressure metal organic chemical vapor deposition (LP-MOCVD) on InP substrates with two-step growth technique. Effect of buffer layer growth temperature on structural and electrical properties of In

0.82

0.18

As was analyzed

which was characterized by scanning electron microscopy (SEM)

Raman scattering and Hall measurement. The results showed that the properties of epilayers have close relation to the buffer layer growth temperature and the optimum buffer layer growth temperature was about 450 ℃.

关键词

Keywords

references

. Hoogeveen Ruud W M, Van der A Ronald J, Goede Albert P H. Extended wavelength InGaAs infrared (1.0~2.4 μm) detector arrays on SCIAMACHY for space-based spectrometry of the Earth atmosphere [J]. Infrared Phys. Techn., 2001, 42 (1):1-16.

. Nagai H, Noguchi Y. Crack formation in InP-GaxIn1-xAs-InP double heterostructure fabrication [J]. Appl. Phys. Lett., 1976, 29 (11):740-741.

. Bandy S, Nishimoto C, Hyder S, et al. Saturation velocity determination for In0.53Ga0.47As field-effect transistors [J]. Appl. Phys. Lett., 1981, 38 (10):817-819.

. Murray S L, Newman F D, Murray C S, et al. MOCVD growth of lattice-matched and mismatched InGaAs materials for thermophotovoltaic energy conversion [J]. Semicond. Sci. Technol., 2003, 18 (5):s202-s208.

. Bachmann K J, Shay J L. An InGaAs detector for the 1.0~1.7 μm wavelength range [J]. Appl. Phys. Lett., 1978, 32 (7):446-448.

. Durel S, Caulet J, Gauneau M, et al. High quality lattice mismatched InGaAs layer grown on InP . Second International Conference on Indium Phosphide and Related Materials, New York: IEEE, 1990, 139-143.

. Chai Y G, Chow R. Molecular beam epitaxial growth of lattice-mismatched In0.77Ga0.23As on InP [J]. J. Appl. Phys., 1982, 53 (2):1229-1232.

. Wada M, Hosomatsu H. Wide wavelength and low dark current lattice-mismatched InGaAs/InAsP photodiodes grown by metalorganic vapor-phase epitaxy [J]. Appl. Phys. Lett., 1994, 64 (10):1265-1267.

. Ko H J, Chen Y F, Ko J M, et al. Two-step MBE growth of ZnO layers on electron beam exposed (111)CaF2 [J]. J. Cryst. Growth, 1999, 207 (1-2):87-94.

. Chen H, Guo L W, Cui Q, et al. Low-temperature buffer layer for growth of a low-dislocation-density SiGe layer on Si by molecular-beam epitaxy [J]. J. Appl. Phys., 1996, 79 (2):1167-1169.

. Shih C F, Chen N C, Lin S Y, et al. AlGaN films grown on (0001) sapphire by a two-step method [J]. Appl. Phys. Lett., 2005, 86 (21):211103-1-3.

. Yuan H R, Chua S J, Miao Z L, et al. Growth and structural properties of thick InAs films on GaAs with low-pressure metal-organic vapor phase epitaxy [J]. J. Cryst. Growth, 2004, 273 (1-2):63-67.

. Akasaki I. Nitride semiconductors-impact on the future world [J]. J. Cryst. Growth, 2002, 237-239 (2):905-911.

. Zhang T, Miao G, Jin Y, et al. Effect of In content of the buffer layer on crystalline quality and electrical property of In0.82Ga0.18As/InP grown by LP-MOCVD [J]. Microelectron. J., 2007, 38 (3):398-400.

. Snyder C W, Mansfield J F, Orr B G. Kinetically controlled critical thickness for coherent islanding and thick highly strained pseudomorphic films of InxGa1-xAs on GaAs(100) [J]. Phys. Rev. B, 1992, 46 (15):9551-9854.

. Goldman R S, Chang J C P, Kavanagh K L. Control of surface morphology and strain relaxation in InGaAs grown on GaAs using a step-graded buffer [J]. SPIE, 1994, 2140 :179-188.

. Groenen J, Landa G, Carles R, et al. Tensile and compressive strain relief in InxGa1-xAs epilayers grown on InP probed by Raman scattering [J]. J. Appl. Phys., 1997, 82 (2):803-809.

. Jusserand B, Voisin P, Voos M, et al. Raman scattering in GaSb-AlSb strained layer superlattices [J]. Appl. Phys. Lett., 1985, 46 (7):678-680.

Views

180

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Effect of the In_xGa_1-xAs Buffer Layer Compositions on Crystalline Quality and Surface Morphology of In_0.82Ga_0.18As Grown by Low Pressure MOCVD

Effects of Growth Parameters on Stimulated Emission Characteristics of AlGaN-based Deep Ultraviolet Multiple Quantum Wells on 4H-SiC Substrates

Effect of Low Growth Pressure of HT-AlN Buffer on GaN Epilayer Grown on Si(111)

Controllable Growth of High Quality ZnO Thin Film on c-sapphire

Effect of Growth Temperature on UV Absorption Characteristics and Growth Orientation of Cubic MgZnO Films

Related Author

ZHANG Tine-min

MIAO Guo-qing

JIN Yi-xin

XIE Jian-chun

JIANG Hong

LI Zhi-ming

SONG Hang

ZHANG Ruijie

Related Institution

Graduate School of the Chinese Academy of Sciences

Key Laboratory of Excited State Processes, Chinese Academy of Sciences

Advanced Ultraviolet Optoelectronics Co.， Ltd.

Research and Development Center for Wide Bandgap Semiconductors， Institute of Semiconductors， Chinese Academy of Sciences

College of Materials Science and Opto-Electronic Technology， University of Chinese Academy of Sciences

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰

Effect of Buffer Layer Growth Temperature on Structural and Electrical Properties of In0.82Ga0.18As with Two Step Growth Technique

DOI：

摘要

Abstract

关键词

Keywords

references

Effect of Buffer Layer Growth Temperature on Structural and Electrical Properties of In_0.82Ga_0.18As with Two Step Growth Technique