Organic Red Electroluminescence Devices Based on PVK with High Color Purity and High Stability
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Organic Red Electroluminescence Devices Based on PVK with High Color Purity and High Stability
Chinese Journal of LuminescenceVol. 30, Issue 6, Pages: 728-733(2009)
作者机构:
河北大学 物理科学与技术学院,河北 保定,071002
作者简介:
基金信息:
DOI:
CLC:TN383.1;TN873.3
Received:25 February 2009,
Revised:02 January 1900,
Published Online:30 December 2009,
Published:30 December 2009
稿件说明:
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YANG Shao-peng, WANG Li-shun, QIU Xiao-li, et al. Organic Red Electroluminescence Devices Based on PVK with High Color Purity and High Stability[J]. Chinese journal of luminescence, 2009, 30(6): 728-733.
DOI:
YANG Shao-peng, WANG Li-shun, QIU Xiao-li, et al. Organic Red Electroluminescence Devices Based on PVK with High Color Purity and High Stability[J]. Chinese journal of luminescence, 2009, 30(6): 728-733.DOI:
Organic Red Electroluminescence Devices Based on PVK with High Color Purity and High Stability
Since Tang and VanSlyke developed an efficient organic light-emitting diode (OLED) based on an organic bilayer structure in 1987
the efficiency has been increased
particularly
the use of n- and p-doped organic transport materials with small-molecule OLEDs leads to improving conductivities and significantly better injection of charge carriers into the OLED. Further concepts have been established such as the insertion of additional organic layers as exciton and charge carrier blockers which can localize the emission zone and prevent exciton quenching effects as well as charge carrier imbalance. In spite of rapid advances in the organic electroluminescent device (OELD)
there have still been many hurdles to be overcome for manufacturing a high-resolution full color display. The development of a stable
efficient
and saturated red device remains an important goal for OLEDs which is obtained by using a discrete emitting layer or doping fluorescent and phosphorescent dyes into a host layer. In this report
a organic red electroluminescent device was fabricated based on hole transporting material PVK doped with Ir(piq)
2
(acac) by the spin-coating method and vacuum evaporate plating technology. The structure of the device is ITO/CuPc/PVK ∶ Ir(piq)
2
(acac)/BCP/Alq
3
/LiF/Al. The effect of the doping ratio on the performance of the device was investigated. The device has high perfor-mance when the doping ratio is 1 ∶ 0.08 in mass that the CIE coordinate is located at (
x
=0.66
y
=0.33) and the main emission peak is at 625 nm. The full width at half maximum of the spectrum is only 55 nm. It is attributed to the structure of micro-cavity which is improved by the reasonable thickness of films. The color of a dye can be modified by inserting it into a microcavity. Indeed
a microcavity is formed within a OLED by weak reflections from interfaces. The spectrum of the device has fine monochromaticity that the color purity is 98.2%. The luminescence performance of the device is well improved.
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references
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