Influences of Annealing Treatment on Structure and Optical Properties of ZnS Films

XU Yan-dong; LI Qing-shan; MENG Yan-feng; ZHANG Xia; YU Ye-mei; LI Xin-kun; DING Xu-li

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Influences of Annealing Treatment on Structure and Optical Properties of ZnS Films

paper | 更新时间：2020-08-12

- Influences of Annealing Treatment on Structure and Optical Properties of ZnS Films
- Chinese Journal of Luminescence Vol. 30, Issue 5, Pages: 634-639(2009)
- 作者机构：
  
  1. 鲁东大学,山东烟台,264025
  2. 曲阜师范大学物理工程学院, 山东曲阜,273165
  3. 曲阜师范大学激光研究所, 山东曲阜,273165
- 作者简介：
- 基金信息：
- DOI：
  CLC： O484.1;O484.4+1
- Received：10 November 2008，
  
  Revised：02 January 1900，
  
  Published Online：30 October 2009，
  
  Published：30 October 2009
- 稿件说明：
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XU Yan-dong, LI Qing-shan, MENG Yan-feng, et al. Influences of Annealing Treatment on Structure and Optical Properties of ZnS Films[J]. Chinese journal of luminescence, 2009, 30(5): 634-639.
DOI：

XU Yan-dong, LI Qing-shan, MENG Yan-feng, et al. Influences of Annealing Treatment on Structure and Optical Properties of ZnS Films[J]. Chinese journal of luminescence, 2009, 30(5): 634-639. DOI：

摘要

在200 ℃下利用激光沉积技术分别在玻璃和Si(100)上沉积制备了ZnS薄膜

并在300

400

500 ℃下退火1 h。用X射线衍射(XRD)仪、紫外/可见光/近红外分光光度计、台阶仪和原子力显微镜(AFM)分别对不同衬底上样品的特征进行了观察。结果表明

玻璃上的ZnS薄膜只在28.5°附近存在着(111)方向的高度取向生长。在可见光范围内透射率为60%~90%。计算显示薄膜的光学带隙在3.46~3.53 eV之间

其小于体材料带隙的原因在于硫元素的缺失。根据光学带隙判断薄膜是单晶立方结构的β-ZnS。Si(100)上生长的是多晶ZnS薄膜:500 ℃下退火后

表面也比未退火表面更加平整致密

变化规律与ZnS/glass的类似。说明高温下退火可以有效地促进晶粒的结合并改善薄膜质量。

Abstract

ZnS films were prepared on glass and p-Si(100) substrates by pulse laser deposition at 200 ℃ temperature. Annealing treatment was conducted at 300

400 and 500 ℃. XRD spectra

ultraviolet-visible spectra

Alpha-step surface profiler and atomic force microscopy(AFM) was used to observe the characteristics of ZnS/glass and ZnS/Si(100).The results showed that highly oriented films are prepared with only one sharp XRD peak at 2

=28.5°corresponding to β-ZnS (111) crystalline orientation on glass substrates. The UV-Vis absorption showed that the films deposited on glass have a good transmission over 60% in visible region. The calculation of optical band gap ranged from 3.46~3.53 eV that can be ascribed to sulphur deficiency. The images from AFM showed that annealed treatment at 500 ℃ can increase the grain size and improve the quality of ZnS films on Si(100)

making the film surface become more smooth and compact than that of as-grown films at 200 ℃.

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references

. Velumani S, Ascencio J A. Formation of ZnS nanorods by simple evaporation technique [J]. Appl. Phys. A, 2004, 79 (1):153-156.

. Yano S, Schroeder R, Sakai H, et al. High-electric-field photocurrent in thin-film ZnS formed by pulsed-laser deposition [J]. Appl. Phys. Lett., 2003, 82 (13):2026-2028.

. Fan Zhixin, Chen Junlin. Theoretical calculation for optimum Mn content in ZnS : Mn nanocrystals [J]. Chin. J. Lumin.(发光学报), 2002, 23 (4):373-376 (in Chinese).

. Bandic Z Z, Piquette E C, McCaldin J O, et al. Solid phase recrystallization of ZnS thin films on sapphire[J]. Appl. Phys.Lett., 1998, 72 (22):2862-2864.

. Zhang Dongfen, Zhang Yahui, Guo Lin, et al. Synthesis of α-ZnS nanoparticles and their photoluminescence and Raman properties [J]. Acta Phys. Chim. Sin.(物理化学学报), 2007, 23 (12):1985-1988 (in Chinese).

. Wang Zhijian, Zhang Haiming, Zhang Ligong, et al. Preparation of ZnS nanopowder doped with Mn by a novel chemical process [J]. Chin. J. Lumin.(发光学报), 2002, 23 (4):364-368 (in Chinese).

. Chen W, Malm J O, Zwiller V, et al. Energy structure and fluorescence of Eu2+ in ZnS ∶ Eu nanoparticles [J]. Phys. Rev. B, 2000, 61 (16):11021-11024.

. Tang Qian, Li Bing, Liu Cai, et al. Study of nano-magnitude ZnS thin films prepared by magnetron sputtering technique [J]. J. Sichuan University (Natural Science Edition)(四川大学学报,自然科学版), 2008, 25 (3):619-622 (in Chinese).

. Isaiah O, Oladeji, Lee C. Synthesis and processing of CdS/ZnS multilayer films for solar cell application [J]. Thin Solid Films, 2005, 474 (1-2):77-83.

. Wirth E, Sitter H, Bauer P, et al. Monocrystalline (100)-oriented ZnS layers grown on Si by molecular beam epitaxy [J]. J. Cryst. Growth, 1995, 146 (1-4):404-407.

. Zhao Xiaowei, Zhang Jiying, Yang Baojun, et al. Effect of substrate temperature on the epilayer quality of ZnS grown on the Si substra te by LP-MOCVD [J]. Chin. J. Lumin.(发光学报), 2000, 21 (1):6-9 (in Chinese).

. Varitimos T E, Tustison R M. Ion beam sputtering of ZnS thin films [J]. Thin Solid Films, 1987, 151 (1):27-33.

. Cheng Jianbo, Qi Kangcheng, Li Junjian. ZnS· Ag cathodoluminescent thin film deposited by RF-sputtering [J]. J. Vocuum Science and Technology (真空科学与技术学报), 1999, 19 (3):196-200 (in Chinese) .

. Hillie K T, Curren C, Swart H C. ZnS thin films grown on Si(100) by XeCl pulsed laser ablation [J]. Appl. Surf. Sci., 2001, 177 (1-2):73-77.

. McLaughlin M, Sakeek H F, Maguire P, et al.Properties of ZnS thin films perpared by 248-nm pulsed laser deposition [J]. Appl. Phys. Lett., 1993, 63 (14):1865-1867.

. Jiu Zhixian, Zhang Binglin, Yao Ning, et al. ZnS thin film deposited by pulsed lasers and its luminescent characteristic [J]. Laser Techonlogy, 2004, 28 (6):620- 624.

. Fei Long, Wang Weimin, Cui Zhankui, et al. An improved method for chemical bath deposition of ZnS thin fims [J]. Chem. Phys. Lett., 2008, 462 (1-3):84-87.

. Alireza Goudarzi, Ghaffar Motedayen Aval, Reza Sahraei, et al. Ammonia-free chemical bath deposition of nanocrystalline ZnS thin film buffer layer for solar cells [J]. Thin Solid Films, 2008, 516 (2):4953-4957.

. Zhang Rengang, Wang Baoyi, Zhang Hui, et al. The properties of the as-sputtered ZnO films under different deposition parameters after sulfidation [J]. Acta Phys. Sin.(物理学报), 2005, 54 (5):2389-2393 (in Chinese).

. Ben Nasr T, Kamoun N, Kanzari M, et al.Effect of pH on the properties of ZnS thin films grown by chemical bath deposition [J]. Thin Solid Films, 2006, 500 (1-2):4-8.

. Lopea M C, Espinos J P, Martí N F, et al. Growth of ZnS thin films obtained by chemical spray pyrolysis: The influence of precursors [J]. J. Cryst. Growth, 2005, 285 (1-2):66-75.

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