The Preparation and Optical Properties of Zn1-xMgxO and Zn1-xMnxO Thin Films by Sol-gel Process

LU Ting; ZHANG Zhi-yong; YAN Jun-feng; ZHAO Li-li; ZHAO Wu

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The Preparation and Optical Properties of Zn_1-xMg_xO and Zn_1-xMn_xO Thin Films by Sol-gel Process

paper | 更新时间：2020-08-12

- The Preparation and Optical Properties of Zn_1-xMg_xO and Zn_1-xMn_xO Thin Films by Sol-gel Process
- Chinese Journal of Luminescence Vol. 30, Issue 5, Pages: 624-629(2009)
- 作者机构：
  
  西北大学信息科学与技术学院,陕西西安,710127
- 作者简介：
- 基金信息：
- DOI：
  CLC： O482.31
- Received：17 July 2008，
  
  Revised：02 January 1900，
  
  Published Online：30 October 2009，
  
  Published：30 October 2009
- 稿件说明：
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LU Ting, ZHANG Zhi-yong, YAN Jun-feng, et al. The Preparation and Optical Properties of Zn_1-xMg_xO and Zn_1-xMn_xO Thin Films by Sol-gel Process[J]. Chinese journal of luminescence, 2009, 30(5): 624-629.
DOI：

LU Ting, ZHANG Zhi-yong, YAN Jun-feng, et al. The Preparation and Optical Properties of Zn_1-xMg_xO and Zn_1-xMn_xO Thin Films by Sol-gel Process[J]. Chinese journal of luminescence, 2009, 30(5): 624-629. DOI：

摘要

采用溶胶-凝胶技术

在Si(110)衬底上制备了Mg、Mn掺杂外延生长的Zn

1-x

O和Zn

1-x

O薄膜

通过XRD、AFM、PL等考察不同杂质浓度对薄膜结晶质量和发光性能的影响。结果表明:Zn

1-x

O和Zn

1-x

O薄膜均具有较高的T

(002)结构系数和较为光滑、平整的表面形貌。掺杂使得薄膜的紫外发光峰向短波方向移动至365 nm左右

同时Zn

1-x

O薄膜的室温可见光发射得以有效地钝化

使其近带边紫外光发射与深能级可见光发射比例高达56

极大地提高了薄膜紫外发光性能。并对掺杂薄膜紫外发光蓝移和Zn

1-x

O薄膜室温可见光发射的猝灭机理进行了深入探讨

得出掺杂组分为Zn

0.85

0.15

O、Zn

0.97

0.03

O时

薄膜具有最强的紫外光发射性能。

Abstract

Zinc oxide (ZnO) semiconductor with a large exciton binding energy of 60 meV and a direct-band gap of 3.37 eV has attracted tremendous attention in recent years because of its high potential for applications

such as short wavelength optical devices

photonic devices and laser systems etc. Especially

the optical pro-perties of ZnO can be obviously influenced by impurity doping with different concentrations

so several techniques

such as pulsed laser deposition

reactive thermal evaporation and sol-gel process

have been employed to synthesize high quality ZnO and doped-ZnO thin films. In this work

based on the fact that metal-doped concentrations have great influence on the crystal structure and ultraviolet(UV) emission of ZnO

such as Mg-doped and Mn-doped ZnO thin films

a consistent set of epitaxial n-type conducting Zn

1-x

xO and Zn

1-x

xO thin films were grown by sol-gel process on Si(110) substrates

and their crystal structures and radiation qualities influenced by different doping concentrations were studied. Meanwhile

the results of XRD

atomic force microscope(AFM) and photoluminescence(PL) spectrum indicated that the crystal structure

surface morphology and UV emission are sensitive to the doping concentrations. Compared with ZnO

1-x

-Mg

xO and Zn

1-x

xO thin films tends to growth in c-axis-orientation

and a strong blue-shift UV emission peak at 365 nm appears both in Zn

1-x

xO and Zn

1-x

xO. In particular

the visible emission of ZnO

which is typically due to the existence of surface defects and oxygen vacancies(V″

) defects appears between 430 and 490 nm in the PL spectra. It is passivated in Zn

1-x

xO films at room temperature

which leads to that the UV emission qualities of Zn

1-x

xO thin films being greater as 56 times as the visible emissions in the optimal doping concentration. At the same time

the causes of blue-shift and Zn

1-x

xOs visible emissions passivation was studied

through the experiments it was indicated that Zn

1-x

xOs blue-shift UV emissions could be primarily caused by the Burstein-Moss(BM) effect

and the visible emissions passivation could be caused by the reduction of V″

defects induced by the Mn oxide. At last

the optimal doping concentrations of Zn

0.85

0.15

O and Zn

0.97

0.03

O were demonstrated

which displays the strong blue-shift UV emissions and the best UV emission qualities.

关键词

Keywords

references

. Yan Xiaolong, Liu Dali, Shi Zengliang, et al. Effects of surface pretreatment on ZnO thin films quality [J]. Chin. J. Lumin.(发光学报), 2005, 26 (6):777-780 (in Chinese).

. Zu P, Tang Z K, Wong G K L, et al. Ultraviolet spontaneous and stimulated emissions from ZnO microcrystallite thin films at room temperature [J]. Solid State Communications, 1997, 103 (4):459-463.

. Cheng Hsin-ming, Hsua Hsu-cheng, Chenb Shiow-lian, et al. Efficient UV photoluminescence from monodispersed secondary ZnO colloidal spheres synthesized by sol-gel method [J]. J. Crystal Growth, 2005, 277 (2):192-199.

. Jayakumara O D, Gopalakrishnana I K, Sudakarb C, et al. Synthesis of manganese doped ZnO single crystals and their magnetization studies [J]. J. Crystal Growth, 2006, 294 (3):432-436.

. Yang Bingchu, Zhang Li, Ma Xuelong, et al. The structural and optical properties of Mn-doped ZnO thin film [J]. Chin. J. Lumin. (发光学报), 2007, 28 (6):875-879 (in Chinese).

. Dong Xin, Zhao Wang, Zhang Baolin, et al. Study on optical properties of p-doped MgZnO fabricalted by MOCVD [J]. Chin. J. Lumin. (发光学报), 2008, 29 (1):129-132 (in Chinese).

. Su Shichen, Lu Youming, Zhang Zhenzhong, et al. Structural ad optical properties of high quality MgxZn1-xO films grown by P-MBE [J]. Chin. J. Lumin. (发光学报), 2008, 29 (2):309-312 (in Chinese).

. Zhang Ning, Li Qingshan, Zhao Bo, et al. Influence of annealing on the structure and photoluminescence of ZnO thin films made by sol-gel method [J]. Chin. J. Lumin.(发光学报), 2006, 27 (5):782-786 (in Chinese).

. Ning Guanghui, Zhao Xiaopeng, Li Jia, et al. Structure and optical properties of Zn1-xMgxO nanoparticles prepared by sol-gel method [J]. Optical Materials, 2004, 27 (1):1-5.

. Chang Renchuan, Chu Shengyuan, Yeh Po-Wen, et al. The influence of Mg doped ZnO thin films on the properties of Love wave sensors [J]. Sensors and Actuators B, Chem., 2008, 132 (1):290-295.

. Dai Hongli. The technical optimization and study of optical properties of ZnO thin films prepared by sol-gel process . Xian: Northwest University, 2004(in Chinese).

. Li Jinhua, Zhang Jiying, Zhao Dongxu, et al. Structure and magnetism of Mn-doped ZnO nanocrystals annealed at diffe-rent temperature [J]. Chin. J. Liquid Crystals and Displays (液晶与显示), 2007, 22 (1):11-14 (in Chinese).

. Hu Juntao, Guo Peng, Mei Jiawei, et al. Luminescent properties after annealing of arrayed ZnO sub-microrods prepared by two-step chemical solution deposition [J]. Chin. J. Lumin.(发光学报), 2006, 27 (2):221-224 (in Chinese).

. Fujihara S, Suzuki A, Kimura T, et al. Mn-doping effects on electrical and luminescent properties of ZnO of red phosphor thin films [J]. J. Appl. Phys., 2003, 94 (17):2411-2416.

. Xiao Zhiyan, Zhang Weili, Zhang Xi, et al. Excitonic luminescence properties of nanocrystalline ZnO films [J]. Chin. J. Lumin.(发光学报), 2003, 24 (4):343-347 (in Chinese).

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