Growth and Characterization of InGaAsSb on InP Substrate by Molecular Beam Epitaxy

LI Zhan-guo; LIU Guo-jun; YOU Ming-hui; LI Lin; JIN Zhe-jun; LI Mei; WANG Yong; WANG Xiao-h

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Growth and Characterization of InGaAsSb on InP Substrate by Molecular Beam Epitaxy

paper | 更新时间：2020-08-12

- Growth and Characterization of InGaAsSb on InP Substrate by Molecular Beam Epitaxy
- Chinese Journal of Luminescence Vol. 30, Issue 5, Pages: 630-633(2009)
- 作者机构：
  
  长春理工大学高功率半导体激光国家重点实验室, 吉林长春 130022
- 作者简介：
- 基金信息：
- DOI：
  CLC： O482.31
- Received：25 January 2009，
  
  Revised：02 January 1900，
  
  Published Online：30 October 2009，
  
  Published：30 October 2009
- 稿件说明：
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LI Zhan-guo, LIU Guo-jun, YOU Ming-hui, et al. Growth and Characterization of InGaAsSb on InP Substrate by Molecular Beam Epitaxy[J]. Chinese journal of luminescence, 2009, 30(5): 630-633.
DOI：

LI Zhan-guo, LIU Guo-jun, YOU Ming-hui, et al. Growth and Characterization of InGaAsSb on InP Substrate by Molecular Beam Epitaxy[J]. Chinese journal of luminescence, 2009, 30(5): 630-633. DOI：

摘要

研究了InP基InGaAsSb外延材料受生长温度和Ⅴ/Ⅲ比的影响。实验中利用高能电子衍射(RHHEED)监测获得了合适的生长温度和Ⅴ/Ⅲ比

采用扫描电子显微镜 (SEM)、X射线光电子能谱(XPS)、X射线双晶衍射(XRDCD)和光致发光(PL)谱等方法研究了InGaAsSb薄膜材料的表面形貌、结晶质量和发光特性。通过控制生长温度和Ⅴ/Ⅲ比

获得了X射线衍射峰半峰全宽较窄的高质量的外延材料。

Abstract

In this work

the InGaAsSb epilayers were grown on InP substrate

the reflection high-energy electron diffraction(RHEED) was used for in-situ monitoring InGaAsSb surface morphology. We systematically studied the effect of the growth temperature and Ⅴ/Ⅲ ratio on a serious of heteroepitaxial quality InGaAsSb films.Optimized the growth-temperature

the epilayers were performed at maintaining binary growth in the cases of 350 ℃

and the folllowing higher quality film appears at 400 ℃.The epitaxial thin films characterization were presented and analyzed

such as surface morphology

interface inspection

crystalline quality and photoluminecence characteristic by scanning electron microscopy (SEM)

X-ray photoelectron spectrum (XPS)

X-ray double-crystal diffraction (XRDCD) and photoluminecence (PL)

etc.

We also showed some questions about the growth temperature and Ⅴ/Ⅲ ratio. In conclusions

the high quality InGaAsSb epilayers with optimized growth temperature and Ⅴ/Ⅲ ratio were obtained

which exhibits a XRD peak with narrow full-width at half maximum (FWHM).

关键词

Keywords

references

. Song Fuying. Process and charater of InSb by MBE without GaAs buffer [J]. Infrared and Laser Technology (红外与激光技术), 1995, 24 (5):63-67 (in Chinese).

. Zhang Xiong, Li Aizhen, Zhang Yonggang, et al. Room temperature AlGaAsSb/InGaAsSb 2 μm ridge-waveguide multi-quantum-well lasers [J]. Chin. J. Rare Metals (稀有金属), 2004, 28 (3):574-576 (in Chinese).

. Tang Tian, Zhang Yonggang, Zheng Yanlan, et al. Strained AlGaAsSb/InGaAsSb materials grown by molecular beam epitaxy [J]. Chin. J. Rare Metals (稀有金属), 2004, 28 (3):530-532 (in Chinese).

. Kawamura Yuichi, Amano Masanobu, Ouchi Kazuhiro, et al. Molecular beam epitaxial growth and characterization of InGaAsSb quantum well structures on InP for lasers operating at 2 μm wavelength region [J]. Technical Report of IEICE, 2003, 103 (47):31-36.

. Lao Yanfeng, Wu Huizhen. Design of GaInAs/InGaAsP quantum wells for 1.44 μm semiconductor lasers [J]. Chin. J. Rare Metals (稀有金属), 2004, 28 (3):511-515 (in Chinese).

. Gao Shaowen, Chen Yiqiao, Li Aizhen. Calculation of band structure of GaxIn1-xAs/GaInAsP strained quantum wells [J]. J. Functional Materials and Devices (功能材料与器件学报), 2002, 8 (3):218-222 (in Chinese).

. Tang Tian, Zhang Yongang, Zheng Yanlan, et al. Photoluminecence characteristic of InGaAsSb multiple quantum-well materials [J]. J. Functional Materials and Devices (功能材料与器件学报), 2005, 11 (2):183-186 (in Chinese).

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Related Author

LI Zhan-guo

LIU Guo-jun

LI Mei

YOU Ming-hui

XIONG Min

LI Lin

ZHANG Bao-shun

WANG Xiao-hua

Related Institution

Harbin Institute of Technology

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Laboratory of Solid-State Optoelectronics Information Technology， Institute of Semiconductors， Chinese Academy of Sciences

State Key Laboratory of High-power Semiconductor Laser, Changchun University of Science and Technology

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