Electron- and Hole-spin Relaxations in InAs/GaAs Single Quantum Dots

LI Wen-sheng; SUN Bao-quan

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Electron- and Hole-spin Relaxations in InAs/GaAs Single Quantum Dots

paper | 更新时间：2020-08-12

- Electron- and Hole-spin Relaxations in InAs/GaAs Single Quantum Dots
- Chinese Journal of Luminescence Vol. 30, Issue 5, Pages: 668-672(2009)
- 作者机构：
  
  1. 中国科学院半导体研究所超晶格国家重点实验室, 北京 100083
  2. 通辽职业学院生物化工系,内蒙古通辽,028000
- 作者简介：
- 基金信息：
- DOI：
  CLC： O472.3
- Received：25 January 2009，
  
  Revised：02 January 1900，
  
  Published Online：30 October 2009，
  
  Published：30 October 2009
- 稿件说明：
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LI Wen-sheng, SUN Bao-quan. Electron- and Hole-spin Relaxations in InAs/GaAs Single Quantum Dots[J]. Chinese journal of luminescence, 2009, 30(5): 668-672.
DOI：

LI Wen-sheng, SUN Bao-quan. Electron- and Hole-spin Relaxations in InAs/GaAs Single Quantum Dots[J]. Chinese journal of luminescence, 2009, 30(5): 668-672. DOI：

摘要

利用分子束外延制备了三种类型量子点样品

它们分别是:未掺杂样品、n型Si调制掺杂样品和p型Be调制掺杂样品。在5 K温度下

采用共聚焦显微镜系统

测量了单量子点的光致发光谱和时间分辨光谱

研究了单量子点中三种类型激子(本征激子、负电荷激子和正电荷激子)的电子/空穴自旋翻转时间。它们的自旋翻转时间常数分别为: 本征激子的自旋翻转时间约16 ns

正电荷激子中电子的自旋翻转时间约2 ns

负电荷激子中空穴的自旋翻转时间约50 ps。

Abstract

Quantum dots (QDs) samples studied in the experiment were grown by molecular-beam epitaxy on a semi-insulating GaAs substrate. They are undoping QD sample

n-doping QD sample and p-doping QD sample. The samples grown in sequence are: 400 nm GaAs layer

100 nm Al

0.5

As layer

0.36 nm GaAs layer with the Si-doping (1.5×10

-3

)

or Be-doping (1×10

-3

)

10 nm GaAs layer

2.35 monolayers (ML) InAs at a growth rate of 0.001 ML/s

200 nm GaAs layer. For undoping QD sample

there is a non Si or Be doped 0.36 nm GaAs layer. The sample has an ultralow density of the QDs. Therefore

we can isolate single QDs without the use of the nanoscaled masks or mesas. In the experiment the sample was cooled to 5 K and a Ti: sapphire laser operating at 750 nm is used as an excitation source. The scanning confocal microscopy with an objective (NA:0.5) is used to spatially resolve single QDs. The polarized photoluminescence (PL) and time-resolved PL measurements were carried out by time-correlated single-photon counting setup. The excitation light is a right circular polarization light. The polarization PL and time-resolved PL emissions were analyzed by a

/4 and

/2 wave plate and a linear polarizer to distinguish different polarization components. All the experiments were performed at low excitation power

which ensures the luminescence working in the single photon emission mode. The main conclusions were given: (1) The exciton-spin relaxation time for undoping QD sample is about 16 ns;(2) The electron spin-flip time is about 2 ns for p-doping QD sample;(3) The hole spin-flip time is about 50 ps for n-doping QD sample.

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references

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