Electron Raman Scattering in Spherical Quantum Dots

SUN Hai-chao; ZHANG Yu-qin; LIU Cui-hong

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Electron Raman Scattering in Spherical Quantum Dots

paper | 更新时间：2020-08-12

- Electron Raman Scattering in Spherical Quantum Dots
- Chinese Journal of Luminescence Vol. 30, Issue 4, Pages: 447-452(2009)
- 作者机构：
  
  广州大学物理电子工程学院,广东广州,510006
- 作者简介：
- 基金信息：
- DOI：
  CLC： O472
- Received：10 November 2008，
  
  Revised：02 January 1900，
  
  Published Online：30 August 2009，
  
  Published：30 August 2009
- 稿件说明：
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SUN Hai-chao, ZHANG Yu-qin, LIU Cui-hong. Electron Raman Scattering in Spherical Quantum Dots[J]. Chinese journal of luminescence, 2009, 30(4): 447-452.
DOI：

SUN Hai-chao, ZHANG Yu-qin, LIU Cui-hong. Electron Raman Scattering in Spherical Quantum Dots[J]. Chinese journal of luminescence, 2009, 30(4): 447-452. DOI：

摘要

研究了球型半导体量子点中的电子拉曼散射.讨论了初态为导带全满

价带全空时的电子跃迁过程

给出了电子拉曼散射的跃迁选择定则。通过计算GaAs和CdS材料球型量子点中电子及空穴参与拉曼散射的微分散射截面

分别比较了电子和空穴的不同影响

发现电子对拉曼散射的贡献要远大于空穴的贡献;当选取不同量子点半径时

拉曼散射微分散射截面变化也非常明显;量子点尺寸不变的条件下

改变入射光子能量

可以发现

微分散射截面随入射光子能量增大而减小。

Abstract

The differential cross-section (DCS) for electron Raman scattering (ERS) in a semiconductor spherical quantum dots was presented. The process of ERS neglects the phonon-assisted transcription and the electron states were confined with GaAs or CdS quantum dot system. Single parabolic conduction and valence bands were assumed. The contribution caused by electron and hole was contrasted separately. The selection rules for the process were also studied. Singularities in the spectra are interpreted for various quantum sizes and different incident photon energies.

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references

. Zhu J L, Chen X. Spectrum and binding of an off-center donor in a spherical quantum dot [J]. Phys. Rev. B, 1994, 50 (7):4497-4502.

. Drexler H, Leonard D, Hansen W, et al. Spectroscopy of quantum levels in charge-tunable InGaAs quantum dots [J]. Phys. Rev. Lett., 1994, 73 (16):2252-2255.

. Empedocles S A, Norris D J, Bawendi M G. Photoluminescence spectroscopy of single CdSe nanocrystallite quantum dots [J]. Phys. Rev. Lett., 1996, 77 (18):3873-3876.

. Allan G, Delerue C, Lannoo M. Nature of luminescent surface states of semiconductor nanocrystallites [J]. Phys. Rev. Lett., 1996, 76 (16):2961-2964.

. Biasiol G, Kapon E. Mechanisms of self-ordering of quantum nanostructures grown on nonplanar surfaces [J]. Phys. Rev. Lett., 1998, 81 (14):2962-2965.

. Zhong Q H, Liu C H. Studies of electronic Raman scattering in CdS/HgS cylindrical quantum dot quantum well structures [J]. Thin Solid Films, 2008, 516 (10):3405-3410.

. Wang Guanghui, Guo Kangxian. Interband optical absorptions in a parabolic quantum dot [J]. Phys. E, 2005, 28 (1):14-21.

. Mukai K, Ohtsuka N, Sugawara M, et al. Self-formed In0.5Ga0.5As quantum dors on GaAs substrates emitting at 1.3 μm [J]. Jpn. J. Appl. Phys., Part A, 1994, 33 (12):L1710-L1712.

. Grundman M, Ledentsov N N, Stier O, et al. Excited states in self-organized InAs/GaAs quantum dots: Theory and experiment [J]. Appl. Phys. Lett., 1996, 68 (7):979-981.

. Heiz R, Grundman M, Ledentsov N N, et al. Multiphonon-relaxation processes in silf-organized InAs/GaAs quantum dots [J]. Appl. Phys. Lett., 1996, 68 (3):361-363.

. Mukai K, Shoji H, Sugawara M, et al. Phonon bottleneck in self-formed InxGa1-xAs/GaAs quantum dots by electroluminescence and time-resolved photoluminescence [J]. Phys. B, 1996, 54 (8):R5243-R5246.

. Arakawa H, Sakaki H. Multidimensional quantum well laser and temperature dependence of its threshold current [J]. Appl. Phys. Lett., 1982, 40 (11):939-941.

. Bimberg D, Grundmann M, Heinrichsdorff F, et al. Quantum dot lasers: breakthrough in optoelectronics [J]. Thin Solid Films, 2000, 367 (1-2):235-249.

. Ranjan V, Singh V A. Shallow-deep transitions of impurities in semiconductor nanostructures [J]. J. Appl. Phys., 2001, 89 (11):6415-6421.

. Ismailov T G, Mehdigev B H. Electron Raman scattering in a cylindrical quantum dot in a magnetic field [J]. Phys. E, 2006, 31 (1):72-77.

. Henry C H, Hopfield J J. Raman scattering by polaritons [J]. Phys. Rev. Lett., 1965, 15 (25):964-966.

. Fleury P A, Worlock J M. Electric-field-induced Raman effect in paraelectric crystals [J]. Phys. Rev. Lett., 1967, 18 (16):665-667.

. Comas F, Trallero-Giner C, Perez-alvarez R. Interband-interband electronic Raman scattering in semiconductors [J]. J. Phys. C, 1986, 19 (32):6479-6488.

. Cardona M. Lattice vibrations in semiconductor superlattices [J]. Superlattices Microstruct., 1990, 7 (3):183-192.

. Burnett J H, Cheong H M, Westervelt R M, et al. Resonant inelastic light scattering in remotely doped wide parabolic GaAs/AlxGa1-xAs quantum wells [J]. Phys. Rev. B, 1993, 48 (7):4524-4529.

. Zhang S L, Hou Y T, Ho K S, et al. Raman selection rules in short-period-superlattice multiple quantum wells [J]. Phys. Lett. A, 1994, 186 (5-6):433-437.

. Widulle F, Ruf T, Gbel A, et al. Raman studies of isotope effects in Si and GaAs [J]. Phys. B: Condensed Matter, 1999, 263-264 :381-393.

. Huang Kun, Zhu Bangfen. Dielectric continuum model and Frhlich interaction in superlattices [J]. Phys. Rev. B, 1998, 38 (18):13377-13386.

. Liu C H, Ma B K, Chen C Y. Surface optical phonon-assisted electron Raman scattering in a semiconductor quantum disc[J]. Chin. Phys., 2002, 11 (7):730-736.

. Betancourt-Riera R, Betancourt R, Rosas R, et al. One phonon resonant Raman scattering in quantum wires and free standing wires [J]. Phys. E, 2004, 24 (3-4):257-267.

. Zhao Xianfu, Liu Cuihong. Electron Raman scattering in quantum well wires [J]. Phys. B,2007, 392 (1-2):11-15.

. Chamberlain M P, Trallero-Giner C, Cardona M. Theory of one-phonon Raman scattering in semiconductor microcrystallites [J]. Phys. Rev. B, 1995, 51 (3):1680-1693.

. Bergues J M, Betancourt-Riera R, Riera R, et al. One-phonon-assisted electron Raman scattering in quantum well wires and free-standing wires [J]. J. Phys.: Condens. Matter., 2000, 12 (36):7983-7998.

. Tenne D A, Bakarov A K, Torov A I, et al. Raman study of self-assembled InAs quantum dots embedded in AlAs: influence of growthtemperature[J]. Phys. E, 2002, 13 (2-4):199-202.

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