Effect of A Series of Host Material on Optoelectronic Performance of Red Phosphorescent OLED

LI Hong-yan; ZHANG Yu-xiang; ZHANG Hong-ke; HE Hai-xiao; DOU Qi-chao; ZHU Xiao

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Effect of A Series of Host Material on Optoelectronic Performance of Red Phosphorescent OLED

paper | 更新时间：2020-08-12

- Effect of A Series of Host Material on Optoelectronic Performance of Red Phosphorescent OLED
- Chinese Journal of Luminescence Vol. 30, Issue 5, Pages: 585-589(2009)
- 作者机构：
  
  西安瑞联电子材料有限责任公司, 陕西西安 710065
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN837.3;TN383.1
- Received：19 November 2008，
  
  Revised：02 January 1900，
  
  Published Online：30 October 2009，
  
  Published：30 October 2009
- 稿件说明：
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LI Hong-yan, ZHANG Yu-xiang, ZHANG Hong-ke, et al. Effect of A Series of Host Material on Optoelectronic Performance of Red Phosphorescent OLED[J]. Chinese journal of luminescence, 2009, 30(5): 585-589.
DOI：

LI Hong-yan, ZHANG Yu-xiang, ZHANG Hong-ke, et al. Effect of A Series of Host Material on Optoelectronic Performance of Red Phosphorescent OLED[J]. Chinese journal of luminescence, 2009, 30(5): 585-589. DOI：

摘要

制作了结构为ITO/2T-NATA (20 nm)/NPB(60 nm)/Zn(BTZ)

: Ir(DBQ)

(acac) (80 nm)/Alq

(70 nm)/LiF(1 nm)/Al(200 nm)的红光器件

其中2T-NATA是4

4″-tris(N-(2-naphthyl)-N-phenyl-amino)-triphenylamine

NPB是N

N'-di(naphthalen-1-yl)-N

N'-diphenyl-benzidine

Zn(BTZ)

是Bis-(2-(2-hydroxyphenyl) benzothiazole)zinc

Ir(DBQ)

(acac)是iridium complex

Alq

是tris(8-hydroxyquinolato)aluminum。基于Ir(DBQ)

(acac) 掺杂的Zn(BTZ)

体系的器件给出最高电致发光(EL)性能。结果显示:10％Ir(DBQ)

-(acac) 掺杂Zn(BTZ)

器件的亮度和效率分别为25 000 cd/m

和12 cd/A

其相应的EL峰位于620 nm

色坐标(

=0.63

=0.37)。由于未使用激子阻挡层

所以

比通常磷光器件的制作工艺简单并且操作过程容易控制。

Abstract

Full color display is the goal of organic light-emitting diodes (OLED)

but the fabrication of stable red devices is the great barrier in the mass production of OLED.In order to use organic light-emitting diodes in displays

it is very important to obtain red light emitting with high efficiency.In this paper

a red phosphorescent material is doped into different host materials by a structure of ITO /CuPc(20 nm)/NPB(60 nm)/Zn(BTZ)

: Ir(DBQ)

(acac) (80 nm)/Alq

(70 nm)/LiF(1 nm)/Al (200 nm).It was found that the device can achieve a brightness of 25 000 cd/m

a current efficiency of 12 cd/A and the colour coordinates of (

=0.63



=0.37). Because there is no hole blocking layer

the device producing process would be simple.

关键词

Keywords

references

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