Effect of Al Composition on the Properties of GaN-based Quantum Cascade Laser

CHEN Gui-chu; FAN Guang-han

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Effect of Al Composition on the Properties of GaN-based Quantum Cascade Laser

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- Effect of Al Composition on the Properties of GaN-based Quantum Cascade Laser
- Chinese Journal of Luminescence Vol. 30, Issue 4, Pages: 473-476(2009)
- 作者机构：
  
  1. 肇庆学院物理系,广东肇庆,526061
  2. 华南师范大学光电子材料与技术研究所, 广东广州 510631
- 作者简介：
- 基金信息：
- DOI：
  CLC： O471.5;TN248.4
- Received：23 December 2008，
  
  Revised：1900-1-2，
  
  Published Online：30 August 2009，
  
  Published：30 August 2009
- 稿件说明：
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CHEN Gui-chu, FAN Guang-han. Effect of Al Composition on the Properties of GaN-based Quantum Cascade Laser[J]. Chinese Journal of Luminescence, 2009, 30(4): 473-476.
DOI：

CHEN Gui-chu, FAN Guang-han. Effect of Al Composition on the Properties of GaN-based Quantum Cascade Laser[J]. Chinese Journal of Luminescence, 2009, 30(4): 473-476. DOI：

摘要

通过对激光器一个周期单元的一维薛定谔方程与泊松方程进行自洽求解

得到了能带与电子波函数的分布情况

并且计算了在近共振条件下偶极跃迁元与垒层Al组分的关系

得到了Al组分的优化结果。结果表明

垒层材料的Al组分大约等于0.15时激光器的偶极跃迁元最大

此时激光器处于垂直跃迁工作状态。

Abstract

In order to optimize the Al composition of the barrier in GaN-based quantum cascade laser

we made a self-consistent calculation to the Schrdinger and Poisson equations of one period of barrier in QCL. The band structure and the electron envelope function were obtained. The relation between dipole matrix element and Al composition of the barrier was illuminated. The results showed that the dipole matrix element is the largest for the optimized Al composition to be 0.15.

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references

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