Effect of Al Composition on the Properties of GaN-based Quantum Cascade Laser

CHEN Gui-chu; FAN Guang-han

doi:null

您当前的位置：

首页 >

文章列表页 >

Effect of Al Composition on the Properties of GaN-based Quantum Cascade Laser

paper | 更新时间：2020-08-12

- Effect of Al Composition on the Properties of GaN-based Quantum Cascade Laser
- Chinese Journal of Luminescence Vol. 30, Issue 4, Pages: 473-476(2009)
- 作者机构：
  
  1. 肇庆学院物理系,广东肇庆,526061
  2. 华南师范大学光电子材料与技术研究所, 广东广州 510631
- 作者简介：
- 基金信息：
- DOI：
  CLC： O471.5;TN248.4
- Received：23 December 2008，
  
  Revised：02 January 1900，
  
  Published Online：30 August 2009，
  
  Published：30 August 2009
- 稿件说明：
移动端阅览
CHEN Gui-chu, FAN Guang-han. Effect of Al Composition on the Properties of GaN-based Quantum Cascade Laser[J]. Chinese journal of luminescence, 2009, 30(4): 473-476.
DOI：

CHEN Gui-chu, FAN Guang-han. Effect of Al Composition on the Properties of GaN-based Quantum Cascade Laser[J]. Chinese journal of luminescence, 2009, 30(4): 473-476. DOI：

摘要

通过对激光器一个周期单元的一维薛定谔方程与泊松方程进行自洽求解

得到了能带与电子波函数的分布情况

并且计算了在近共振条件下偶极跃迁元与垒层Al组分的关系

得到了Al组分的优化结果。结果表明

垒层材料的Al组分大约等于0.15时激光器的偶极跃迁元最大

此时激光器处于垂直跃迁工作状态。

Abstract

In order to optimize the Al composition of the barrier in GaN-based quantum cascade laser

we made a self-consistent calculation to the Schrdinger and Poisson equations of one period of barrier in QCL. The band structure and the electron envelope function were obtained. The relation between dipole matrix element and Al composition of the barrier was illuminated. The results showed that the dipole matrix element is the largest for the optimized Al composition to be 0.15.

关键词

Keywords

references

. Faist J, Capasso F, Sivco D, et al. Quantum cascade laser [J]. Science, 1994, 264 (5158):553-556.

. Strasser G, Gianoradoli S, Hvozdava L, et al. GaAs/AlGaAs superlattice quantum cascade lasers at λ≈13 μm [J]. Appl. Phys. Lett., 1999, 75 (10):1345-1347.

. Iizuka N, Kaneko K, Suzuki N, et al. Ultrafast intersubband relaxation (≤150 fs) in AlGaN /GaN multiple quantum wells [J]. Appl. Phys. Lett., 2000, 77 (5):648-650.

. Heber J D, Gmachl C, Ng H M, et al. Comparative study of ultrafast intersubband electron scattering times at 1.55 μm wave length in GaN/AlGaN heterostructures [J]. Appl. Phys. Lett., 2002, 81 (7):1237-1239.

. Bernardini F, Fiorentini V, Vanderbilt D. Spontaneous polarization and piezoelectric constants of Ⅲ-Ⅴ nitrides [J]. Phys. Rev. B, 1997, 56 (16):R10024-R10027.

. Ambacher O, Foutz B, Smart J, et al. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures [J]. J. Appl. Phys., 2000, 87 (1):334-344.

. Sun G, Soref R A, Khurgin J B. Active region design of a terahertz GaN/Al0.15Ga0.85N quantum cascade laser [J]. Superlattices and Microstructures, 2005, 37 (2):107-113.

. Huanga G S, Lua T C, Yao H H, et al. GaN/AlGaN active regions for terahertz quantum cascade lasers grown by low-pressure metal organic vapor deposition [J]. J. Cryst. Grow., 2007, 298 :687-690.

. Ambacher O, Smart J, Shealy J R, et al. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures [J]. J. Appl. Phys., 1999, 85 (6):3222-3233.

. Chin V W, Tansley T L, Osotchan T. Electron mobilities in gallium, indium, and aluminum nitrides [J]. J. Appl. Phys., 1994, 75 (11):7365-7372.

. Brunner D, Angerer H, Bustarret E, et al. Optical constants of epitaxial AlGaN films and their temperature dependence [J]. J. Appl. Phys., 1997, 82 (10):5090-5096.

Views

300

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Effect of Al Composition of Electron Blocking Layer on Photoelectric Performance of GaN-based Blue Laser Diode

Influence of Al Composition on Electrical and Structural Properties of Al_xGa_1-xN/AlN/GaN HEMT Materials Grown by MOCVD

The Effect of Spontaneous Emission on AM Noise for Quantum Cascade Laser

Effect of p-doping Density and Al Composition upon Luminescent Efficiency

Related Author

Bing-she XU

Jian LIANG

Ai-qin ZHANG

Zhi-gang JIA

Hai-liang DONG

Jing LIU

Xiao-juan DU

ZHANG Bao-shun

Related Institution

School of Materials Science and Engineering, Taiyuan University of Technology

Aerospace Science and Technology Defense Technology Research and Experimental Center

Key Laboratory of Interface Science and Engineering of New Materials, Ministry of Education, Taiyuan University of Technology

College of Textile Engineering, Taiyuan University of Technology

Institute of Atomic and Molecular Science of Materials, Shaanxi University of Science and Technology

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰