Lattice Mismatch Effect on Photoluminescence from InAsxP1-x/InP Heterostructuer

YAN Da-wei; SONG Hang; MAO Guo-qing; YU Shu-zhen; JIANG Hong; LI Zhi-ming; LIU Xia; CAO Lia

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Lattice Mismatch Effect on Photoluminescence from InAs_xP_1-x/InP Heterostructuer

paper | 更新时间：2020-08-12

- Lattice Mismatch Effect on Photoluminescence from InAs_xP_1-x/InP Heterostructuer
- Chinese Journal of Luminescence Vol. 30, Issue 3, Pages: 309-313(2009)
- 作者机构：
  
  1. 中国科学院研究生院北京,100049
  2. 中国科学院激发态物理重点实验室, 中国科学院长春光学精密机械与物理研究所,吉林长春,130033
- 作者简介：
- 基金信息：
- DOI：
  CLC： O482.31
- Received：25 August 2008，
  
  Revised：02 January 1900，
  
  Published Online：30 June 2009，
  
  Published：30 June 2009
- 稿件说明：
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YAN Da-wei, SONG Hang, MAO Guo-qing, et al. Lattice Mismatch Effect on Photoluminescence from InAs_xP_1-x/InP Heterostructuer[J]. Chinese journal of luminescence, 2009, 30(3): 309-313.
DOI：

YAN Da-wei, SONG Hang, MAO Guo-qing, et al. Lattice Mismatch Effect on Photoluminescence from InAs_xP_1-x/InP Heterostructuer[J]. Chinese journal of luminescence, 2009, 30(3): 309-313. DOI：

摘要

采用低压金属有机化学气相沉积(LP-MOCVD)技术

在掺Fe的半绝缘InP衬底上制备了InAs

0.157

0.843

外延层。利用变温光致发光研究了InAs

0.157

0.843

外延层在13~300 K温度范围内的发光特性

通过理论分析与计算

证实了在应力作用下InAs

0.157

0.843

外延层价带顶的轻重空穴带发生了劈裂

并研究了导带底与价带顶轻空穴带之间形成的复合发光峰在应力作用下随温度的变化规律。

Abstract

The variable-temperature photoluminescence spectra of strained InAs

1-x

/InP heterostructuer were experimentally determined in the temperature range 13~300 K. A theoretical calculation was presented that takes into account the temperature-induced variations in band gap and biaxial strain to explain the PL spectra. The results showed that strain which is induced by lattice mismatch between epitaxial layer and substrate removes the degeneracy between the light- and heavy-hole states at the top of the valence band

and with temperature under 100 K

the recombinations from the conduction band to the split valence bands are both observed in the photoluminescence spectra. As temperature is raised

it results in an increasingly larger light-hole population than that of heavy-hole due to thermalization

so when temperature is beyond 100 K only the recombination from the conduction band to the light-hole state can be observed.We also find that the energy of the recombination between the conduction band and the light-hole and heavy-hole state changes as a function of temperature.

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Keywords

references

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