Watt-level High Power InGaN-based Blue LED Photometric, Chromatric and Electric Characteristics

LIN Jie-ben; GUO Zhen-ning; CHEN Li-bai; WU Li-xing; RUAN Yuan-shan; LIN Rui-mei

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Watt-level High Power InGaN-based Blue LED Photometric, Chromatric and Electric Characteristics

paper | 更新时间：2020-08-12

- Watt-level High Power InGaN-based Blue LED Photometric, Chromatric and Electric Characteristics
- Chinese Journal of Luminescence Vol. 30, Issue 3, Pages: 379-384(2009)
- 作者机构：
  
  1. 华侨大学信息科学与工程学院, 福建泉州 362021
  2. 福建省泉州市紫欣光电有限公司,福建泉州,362000
  3. 福建省厦门光莆电子有限公司,福建厦门,361006
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN312.8;O482.31
- Received：31 July 2008，
  
  Revised：02 January 1900，
  
  Published Online：30 June 2009，
  
  Published：30 June 2009
- 稿件说明：
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LIN Jie-ben, GUO Zhen-ning, CHEN Li-bai, et al. Watt-level High Power InGaN-based Blue LED Photometric, Chromatric and Electric Characteristics[J]. Chinese journal of luminescence, 2009, 30(3): 379-384.
DOI：

LIN Jie-ben, GUO Zhen-ning, CHEN Li-bai, et al. Watt-level High Power InGaN-based Blue LED Photometric, Chromatric and Electric Characteristics[J]. Chinese journal of luminescence, 2009, 30(3): 379-384. DOI：

摘要

封装并测量了瓦级大功率InGaN蓝色发光二极管(LED)在不同正向电流

驱动下的光通量、电功率、发光效率、发射光谱和色品坐标等参数的变化。研究表明

光通量与电功率随

的增大呈亚线性增加

而发光效率

则下降。当

从50 mA一直增大到450 mA左右时

发射光谱的峰值波长

随

的增加发生蓝移

蓝移现象可能与InGaN蓝光LED芯片在较大电流时能带被拉平以及In成分的作用有关。当

大于500 mA或800 mA后

又发生红移

红移现象可能与大电流注入下InGaN蓝光LED芯片产生的热效应以及电子-空穴对辐射复合有关。此外

光谱的半峰全宽(FWHM)产生宽化现象

色坐标

x和y

值也发生变化。

Abstract

Watt-level high power InGaN-based blue LEDs were packaged using a traditional packaging method

and their luminous flux

electric power

luminous efficiency

emission spectra and chromaticity coordinates were measured under different forward current (

) from 50 to 1 000 mA

with a current interval of 50 mA. The results showed that the luminous flux rises sub-linearly

but the luminous efficiency declines with the increase of

. When the temperature rises with the increase of drive current

the carrier kinetic energy enhances

and then more non-equilibrium electrons diffuse out of the quantum wells

which could result in the decrease of luminous efficiency. The spectrum morphologies and the peak wavelength

shows a slight blue-shift with the increase of

from 50 mA to 450 mA

which is related to the influence of In ingredient and the leveled band-gap at a proper high current. The blue-shift values are different between different blue LEDs. However

when

increases from 500 mA to 800 mA

shows a slow red-shift due to the temperature dependence of band-gap energy

and the electron-hole pair recombination luminescence mechanism. In addition

full width at half maximum (FWHM) of the InGaN-based blue LED emission spectra is widened

and the reason was analyzed by the model of configuration coordinate. Moreover

the chromaticity coordinate

also changes at the same time.Photometric

chromatric and electric characteristics of blue LEDs make important contributions to chip manufacture and the high power white light LEDs

especially

to the high color rendering warm white LEDs.

关键词

Keywords

references

. Katsuya Kobashi, Tsunemasa Taguchi. Warm white LEDs lighting over Ra=95 and its applications [J]. SPIE, 2007, 6486 :648610-1-6.

. Fang Fubo, Wang Yaohao, Song Daihui, et al. Spectroscopic analysis of white LED attenuation [J]. Chin. J. Lumin.(发光学报), 2008, 29 (2):353-356 (in Chinese).

. Wu Qing, Huang Xian, Liu Li, et al. The corresponding relation between the color coordinate and the luminous flux [J]. Chin. J. Lumin. (发光学报), 2007, 28 (5):736-740 (in Chinese).

. Wang Jian, Huang Xian, Liu Li, et al. Effect of temperature and current on LED luminous efficiency [J]. Chin. J. Lumin. (发光学报), 2008, 29 (2):358-362 (in Chinese).

. Naoki Kimura, Ken Sakuma, Syunichiro Hirafune. Extrahigh color rendering white light-emitting diode lamps using oxynitride and nitride phosphors excited by blue light-emitting diode [J]. Appl. Phys. Lett., 2007, 90 (5):051109-1-3.

. Xie Rongjun, Naoto Hirosaki, Naoki Kimura, et al. 2-phosphor-converted white-emitting diodes using oxynitride/nitride phosphors [J]. Appl. Phys. Lett., 2007, 90 (19):191101-1-3.

. Li Xiaobai. Development of GaN-based solid-state devices [J]. Semiconductor Technology (半导体技术), 2001, 26 (5):20-25 (in Chinese).

. Rossia F, Armania N, Salviatia G, et al. The role of Mg complexes in the degradation of InGaN-based LEDs [J]. Super-lattices and Microstructures, 2004, 36 (4-6):859-868.

. Sugahara T, Sato H, Hao M, et al. Direct evidence that dislocations are non-radiative recombination centers in GaN [J]. Jpn. J. Appl. Phys. Part 2, 1998, 37 (4A):L398-L400.

. Lei Yong, Fan Guanghan, Liao Changjun, et al. Research on the thermal property of powerful white LEDs [J]. J. Opto-electronics & Laser (光电子·激光), 2006, 17 (8):945-947 (in Chinese).

. Lin Liang, Chen Zhizhong, Chen Ting, et al. Characteristics of the accelerated aging white LEDs [J]. Chin. J. Lumin.(发光学报), 2005, 26 (5):617-620 (in Chinese).

. Xu Xiaoliang, Shi Chaoshu. Defects and impurities in GaN [J]. Progress in Phys. (物理学进展), 2001, 21 (1):1-11 (in Chinese).

. Lee Y J, Lin P C, Kuo H C, et al. Dichromatic InGaN-based white light emitting diodes by using laser lift-off and wafer-bonding schemes [J]. Appl. Phys. Lett., 2007, 90 (16):161115-1-3.

. Wang X H, Jia H Q, Guo L W, et al. White light-emitting diodes based on a single InGaN emission layer [J]. Appl. Phys. Lett., 2007, 91 (16):161912-1-3.

. Sala F D, Carlo A D, Lugli P, et al. Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures [J]. Appl. Phys. Lett., 1999, 74 (14):2002-2004.

. Yu Lisheng. Semiconductor Hetero-junction Physics [M]. 2nd Edtion, Beijing: Science Press, 2006, 170.

. Fang Rongchuan. Solid Statc Spectroscopy [M]. Hefei: University of Science and Technology of China Press, 2001, 127-132.

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