Binding Energies of Impurity States in Polar Quantum Well Structures in an External Electric Field

WU Yun-feng; LIANG Xi-xia; Bajaj K K

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Binding Energies of Impurity States in Polar Quantum Well Structures in an External Electric Field

paper | 更新时间：2020-08-12

- Binding Energies of Impurity States in Polar Quantum Well Structures in an External Electric Field
- Chinese Journal of Luminescence Vol. 30, Issue 3, Pages: 285-292(2009)
- 作者机构：
  
  1. 大连民族学院理学院,辽宁大连,116600
  2. 内蒙古大学物理系,内蒙古呼和浩特,010021
  3. 爱默瑞大学物理系, 22 亚特兰大,美国,CA303
- 作者简介：
- 基金信息：
- DOI：
  CLC： O472.3;O471.3
- Received：10 September 2008，
  
  Revised：02 January 1900，
  
  Published Online：30 June 2009，
  
  Published：30 June 2009
- 稿件说明：
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WU Yun-feng, LIANG Xi-xia, Bajaj K K. Binding Energies of Impurity States in Polar Quantum Well Structures in an External Electric Field[J]. Chinese journal of luminescence, 2009, 30(3): 285-292.
DOI：

WU Yun-feng, LIANG Xi-xia, Bajaj K K. Binding Energies of Impurity States in Polar Quantum Well Structures in an External Electric Field[J]. Chinese journal of luminescence, 2009, 30(3): 285-292. DOI：

摘要

我们用变分方法研究了外电场下量子阱中的杂质态结合能

计算中既考虑了电子同体纵光学声子和界面光学声子的相互作用又考虑了杂质中心同体纵光学声子和界面光学声子的相互作用。我们以GaAs/Al

0.3

0.7

As量子阱为例

讨论了结合能随杂质位置、阱宽和电场强度的变化规律。得到了电子-声子相互作用对杂质态结合能和斯塔克效应的修正是相当明显的。

Abstract

The binding energies of donor impurity states in quantum wells in the presence of an electric field were investigated by a variational method. The impurity-center as well as the bound electron couplings with both the longitudinal optical (LO) and interface optical (IO) phonons were taken into account in the calculation. The binding energies were obtained as the functions of impurity position

well width and electric field strength. The results for GaAs/Al

0.3

0.7

As quantum wells as an example were given and discussed. It was found that the correction due to electron-phonon interaction to the impurity state binding energies and the Stark shifts is quite significant.

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references

. Jarosik N C, McCombe B D, Shanabrook B V, et al. Binding of shallow donor impurities in quantum-wells structures [J]. Phys. Rev. Lett., 1985, 54 (12):1283-1286.

. McCombe B D, Jiang Z X, Hawrylak P. Spectroscopy of neutral and charged donors in semiconductor quantum wells: Many body effects [J]. Phys. Stat. Sol.(b), 1998, 210 (2):587-597.

. Shanabrook B V, Comas J, Perry T A, et al. Raman scattering from electrons bound to shallow donors in GaAs-AlxGa1-xAs quantum-well structures [J]. Phys. Rev. B, 1984, 29 (12):7096-7098.

. Lemos V, Ritter T, Weinstein B A. Anomalies in the pressure response of the Raman modes in (211)-oriented InxGa1-x-As/GaAs strained-layer superlattices [J]. Appl. Phys. Lett., 1992, 61 (12):1417-1419.

. Spagnolo V, Scamarcio G, Colombelli R, et al. Evidence of electronic confinement in pseudomorphic Si/GaAs superlattices [J]. Phys. Rev. B, 1998, 57 (24):R15100-R15103.

. Klipstein P C, Tapster P R, Apsley N, et al. Electroreflectance spectroscopy from quantum well structures in an electric field [J]. J. Phys. C: Solid State Phys., 1986, 19 (6):857-871.

. Kasapoglua E, Sari H, Sokmen I. Binding energies of shallow donor impurities in different shaped quantum wells under an applied electric field [J]. Physica B, 2003, 339 (1):17-22.

. Matos-Abiague A, Berakdar J. Femtosecond control of electronic motion in semiconductor double quantum wells [J]. Phys. Rev. B, 2004, 69 (15):155304-1-3.

. Chen H, Li X D, Zhou S X. Stark shift of hydrogenic impurity states in a quantum well [J]. Phys. Rev. B, 1991, 44 (12):6220-6223.

. López-Gondar J, d'Albuquerque e Castro J, Oliveira L E. Electric-field effects on shallow impurity states in GaAs-(Ga,Al)As quantum wells [J]. Phys. Rev. B, 1990, 42 (11):7069-7077.

. Shen Z J, Yuan X Z, Shen G T, et al. Effect of electron-surface-optical-phonon interaction on the impurity-state energies in a semiconductor quantum well [J]. Phys. Rev. B, 1994, 49 (16):11035-11039.

. Sil S, Chatterjee A. Ground and excited states of a bound polaron in a purely two-dimensional quantum well [J]. J. Phys.: Cond. Matt., 1991, 3 (47):9401-9416.

. Apostolova T, Huang D H, Cardimona D A. Photon-absorption-induced intersubband optical-phonon scattering of electrons in quantum wells [J]. Phys. Rev. B, 2003, 67 (20):205323-1-3.

. Bibik A I, Gerlach L B, Smondyrev M A. Large polaron in an asymmetrical rectangular quantum well [J]. Phys. Stat. Sol. (b), 2003, 237 (1):186-193.

. Li Y C, Gu S W. Electron-phonon effects on Stark shifts of a bound polaron in a quantum well [J]. Phys. Rev. B, 1992, 45 (20):12102-12105.

. Licari J C, Evrard R. Electron-phonon interaction in a dielectric slab: Effect of the electronic polarizability [J]. Phys. Rev. B, 1977, 15 (4):2254-2264.

. Lee T D, Low F, Pines D. The motion of slow electrons in a polar crystal [J]. Phys. Rev., 1953, 90 :297-302.

. Liang X X. The interaction of interface optical phonons with an electron in an asymmetric quantum well [J]. J. Phys.: Condensed Matter, 1992, 4 (49):9769-9778.

. Zheng R S, Ban S L, Liang X X. Effect of interface and bulk optical phonons on polarons in a quantum well [J]. Phys. Rev. B, 1994, 49 (3):1796-1801.

. Platzman P M. Ground-state energy of bound polarons [J]. Phys. Rev., 1962, 125 (6):1961-1965.

. Bouhassoune M, Charrour R, Fliyou M, et al. Binding energy of shallow impurities in a polar quantum well wire [J]. Physica B, 2001, 304 (1-4):389-397.

. Adachi S. GaAs, AlAs, and AlxGa1-xAs: Material parameters for use in research and device applications [J]. J. Appl. Phys., 1985, 58 (3):R1-R29.

. Deng Z Y, Lai T R, Guo J K, et al. Electronic and shallow donor impurity states in GaAs-Ga1-xAlxAs quantum-well wires: Effects of dielectric mismatch [J]. J. Appl. Phys., 1994, 75 (11):7389-7393.

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