Effect of   Si Nanocrystals Size on Photoluminescence Intensity of Si Nanocrystals Embedded in Si/SiO&lt;sub&gt;2&lt;/sub&gt; Superlattices after Ce&lt;sup&gt;3+&lt;/sup&gt; Implantation

doi:null

您当前的位置：

首页 >

文章列表页 >

Effect of Si Nanocrystals Size on Photoluminescence Intensity of Si Nanocrystals Embedded in Si/SiO2 Superlattices after Ce3+ Implantation

paper | 更新时间：2020-08-12

- Effect of Si Nanocrystals Size on Photoluminescence Intensity of Si Nanocrystals Embedded in Si/SiO2 Superlattices after Ce3+ Implantation
- Chinese Journal of Luminescence Vol. 30, Issue 2, Pages: 243-246(2009)
- 作者机构：
 
 北京交通大学光电子技术研究所发光与光信息技术教育部重点实验室, 北京 100044
- 作者简介：
 
 [ "" ]
- 基金信息：
- DOI：
 CLC： O482.31
- Received：25 October 2008，
 
 Revised：02 January 1900，
 
 Published Online：30 April 2009，
 
 Published：30 April 2009
- 稿件说明：
移动端阅览
Effect of Si Nanocrystals Size on Photoluminescence Intensity of Si Nanocrystals Embedded in Si/SiO2 Superlattices after Ce3+ Implantation[J]. Chinese journal of luminescence, 2009, 30(2): 243-246.
DOI：

Effect of Si Nanocrystals Size on Photoluminescence Intensity of Si Nanocrystals Embedded in Si/SiO2 Superlattices after Ce3+ Implantation[J]. Chinese journal of luminescence, 2009, 30(2): 243-246. DOI：

摘要

利用磁控溅射技术溅射硅靶

通过调节溅射气氛在硅衬底上生长了SiO/SiO

超晶格

热退火处理后超晶格中的SiO发生相分离得到硅纳米晶。通过比较不同退火方式对于硅纳米晶的形成的影响发现

管式炉退火处理的样品给出非常强的室温光致发光

其发光峰的峰位随着硅纳米晶尺寸的增大而红移

且管式炉退火比快速热退火更有利于硅纳米晶的形成。

Abstract

paper

关键词

Keywords

references

. Zhao Yue, Zhao Jie, Li Dongsheng, et al. Relationship between mirority carrier life and morphorlogy with luminescent properties of porous silicon [J]. Chin. J. Lumin. (发光学报), 2007, 28 (1):131-134 (in Chinese).

. Wu Keyue, Huang Weiqi, Xu Li. Preparation of porous SiGe and emission enhancement in near-infrared area [J]. Chin. J. Lumin. (发光学报), 2007, 28 (4):585-588 (in Chinese).

. Ni Mengying, Li Qingshan, Xu Jindong. The optical characteristic of organic dye embedded in annealed porous silicon [J]. Chin. J. Lumin. (发光学报), 2007, 28 (1):131-134 (in Chinese).

. Li Hongliang, Zhai Jiang, Wan Yong, et al. Preparation of the oxidized porous silicon with stable surface composition and intense photoluminescence [J]. Chin. J. Lumin. (发光学报), 2008, 29 (5):879-884 (in Chinese).

. Canham L T. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers [J]. Appl. Phys. Lett., 1990, 57 (10):1046-1048.

. Lockwood D J, Lu Z H, Baribeau J M. Quantum confined luminescence in Si/SiO2 superlattices [J]. Phys. Rev. Lett., 1996, 76 (3):539-541.

. Pavesi L, Dal Negro L, Mazzoleni C. Optical gain in silicon nanocrystals [J]. Nature, 2000, 408 (6811):440-444.

. Zacharias M, Heitmann J, Scholz R. Size-controlled highly luminescent silicon nanocrystals: A SiO/SiO2 superlattice approach [J]. Appl. Phys. Lett., 2002, 80 (4):661-663.

. Shimizu-Iwayama Tsutomu, Hole David E, Townsend Peter D. Light emission from ion beam induced silicon nanoclusters in silicon dioxide: Role of cluster-cluster interactions via a thin oxide [J]. Nucl. Instrum. Meth. B, 1999, 148 (1-4):980-985.

. Yi L X, Heitmann J, Scholz R, et al. Si rings, Si clusters, and Si nanocrystals-different states of ultrathin SiOx layers [J]. Appl. Phys. Lett., 2002, 81 (22):4248-4250.

. Sui Yanping, Ma Zhongyuan, Chen Kunji, et al. The fabrication of nc-Si/SiO2 multilayers and blue-light emission [J]. Acta. Phys. Sin. (物理学报), 2003, 52 (4):989-992 (in Chinese).

Views

119

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

STUDY OF THE ELECTROLUMINESCENCE AND EXCITATION PROCESS OF CaS：TmF₃ FILM PREPARED BY RADIO FREQUENCY MAGNETRON SPUTTERING

STUDY OF ETCHING HOLE AND ARRAY OF ZnSe-ZnS SIS

Related Author

Sun Jiaming

Zhong Guozhu

Fan Xiwu

Zheng Chenwei

Zhang Jiying

Jiang Jinxiu

Chen lianchun

Related Institution

Laboratory of Excited States Processes, Chinese Academy of Sciences, Changchun 130021

Changchun Institute of Physics, Chinese Academy of Sciences, Changchun 130021

Changchun Institute of Physics, Academia Sinica

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰

Effect of Si Nanocrystals Size on Photoluminescence Intensity of Si Nanocrystals Embedded in Si/SiO<sub>2</sub> Superlattices after Ce<sup>3+</sup> Implantation

DOI：

摘要

Abstract

关键词

Keywords

references