InAs Quantum Dots with InGaAs Caplayer Infrared Detector Grown by MBE

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InAs Quantum Dots with InGaAs Caplayer Infrared Detector Grown by MBE

paper | 更新时间：2020-08-12

- InAs Quantum Dots with InGaAs Caplayer Infrared Detector Grown by MBE
- Chinese Journal of Luminescence Vol. 30, Issue 2, Pages: 209-213(2009)
- 作者机构：
  
  1. 首都师范大学物理系
  2. 中国科学院物理研究所北京凝聚态物理国家实验室
- 作者简介：
  
  [ "" ]
- 基金信息：
- DOI：
  CLC： O482.31;O484.4+1
- Received：25 August 2008，
  
  Revised：1900-1-2，
  
  Published Online：30 April 2009，
  
  Published：30 April 2009
- 稿件说明：
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InAs Quantum Dots with InGaAs Caplayer Infrared Detector Grown by MBE[J]. Chinese Journal of Luminescence, 2009, 30(2): 209-213.
DOI：

InAs Quantum Dots with InGaAs Caplayer Infrared Detector Grown by MBE[J]. Chinese Journal of Luminescence, 2009, 30(2): 209-213. DOI：

摘要

利用分子束外延技术(MBE)

在GaAs(001)衬底上自组织生长了不同结构的InAs量子点样品

并制备了量子点红外探测器件。利用原子力显微镜(AFM)和光致发光(PL)光谱研究了量子点的表面结构、形貌和光学性质。渐变InGaAs层的插入有效地释放了InAs量子点所受的应力

抑制了量子点中In组分的偏析

提高了外延层的生长质量

降低了势垒高度

使InAs量子点荧光波长红移。伏安特性曲线和光电流(PC)谱结果表明

生长条件的优化提高了器件的红外响应

具有组分渐变的InGaAs层的探测器响应波长发生明显红移。

Abstract

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references

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. Jun Tatebayashi, Masao Nishioka, Yasuhiko Arakawa, et al. Luminescence in excess of 1.5 μm at room-temperature of InAs quantum dots capped by a thin InGaAs strain-reducing layer [J]. J. Crystal Growth, 2002, 237-239 :1296-1300.

. Kong Meiying, Zeng Yiping, Li Jinmin, et al. Tuning of Infrared absorption wavelength of MBE InGaAs/GaAs quantum dots [J]. Chin. J. Semicond. (半导体学报), 2003, 24 (3):78-80 (in Chinese). InAs Quantum Dots with InGaAs Caplayer Infrared Detector Grown by MBE WU Dian-zhong1, WANG Wen-xin2, YANG Cheng-liang2, JIANG Zhong-wei2, GAO Han-chao2, TIAN Hai-tao2, CHEN Hong2, JIANG Hong-wei1 (1. Department of Physics, Capital Normal University, Beijing 100048, China; 2. Beijing National Laboratory Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China) Abstract: Self-assembled InAs quantum dots (QDs) capping with the InGaAs layer of the graded component are grown by molecular beam epitaxy (MBE) on GaAs (001). Surface structure, morphology and optical properties of QDs were studied by atomic force microscopy (AFM) and photoluminescence spectroscopy (PL). The insertion of InGaAs layer enhances the quality of epitaxial layer, relaxes the stress of InAs quantum dots, changes the energy level of QDs and suppress the component segregation of indium from the quantum dots. Characteristic of devices were studied byphotocurrent spectra(PC) and volt-ampere characteristic curves. Wavelength red-shift of QDs device with InGaAs graded composition layer was determined by PL and PC curves. Key words: InAs quantum dots; InGaAs graded component layer; photoluminescence; molecular beam epitaxy; infrared detector device

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