Effect of p-type Deep Accepter-like Trap on the Charge Carrier Transportation of OLEDs

CHEN Wei; RAO Hai-bo; JIANG Quan; YU Xin-mei; HU Yue; LI Jun-fei; HOU Bin

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Effect of p-type Deep Accepter-like Trap on the Charge Carrier Transportation of OLEDs

paper | 更新时间：2020-08-12

- Effect of p-type Deep Accepter-like Trap on the Charge Carrier Transportation of OLEDs
- Chinese Journal of Luminescence Vol. 30, Issue 1, Pages: 51-54(2009)
- 作者机构：
  
  电子科技大学光电信息学院,四川成都,610054
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN383.1;TN873.3
- Received：16 April 2008，
  
  Revised：02 January 1900，
  
  Published Online：20 February 2009，
  
  Published：20 February 2009
- 稿件说明：
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CHEN Wei, RAO Hai-bo, JIANG Quan, et al. Effect of p-type Deep Accepter-like Trap on the Charge Carrier Transportation of OLEDs[J]. Chinese journal of luminescence, 2009, 30(1): 51-54.
DOI：

CHEN Wei, RAO Hai-bo, JIANG Quan, et al. Effect of p-type Deep Accepter-like Trap on the Charge Carrier Transportation of OLEDs[J]. Chinese journal of luminescence, 2009, 30(1): 51-54. DOI：

摘要

对OLED器件施加扫描电压时

器件的瞬态电压-电流特性表现出滞后现象。并且随着扫描电压的方向、扫描速度的不同

器件瞬态电压-电流曲线也不相同。使用具有ITO/CuPc/NPD/Alq

/LiF/Al结构的OLED器件做电压扫描测试

并尝试用p型深受主型陷阱能级的存在

以及深能级较长的充放电时间特性对OLED器件中载流子输运过程的影响来定性解释上述滞后现象

获得了比较满意的结果

为器件性能的进一步优化找到了方向。

Abstract

Transient voltage-current characteristics of OLED show hysteresis effects in the bias regime depending on the direction and speed of bias sweep. This behaviour was investigated here for the example of device based on the configuration of ITO/CuPc/NPD/Alq<sub>3</sub>/LiF/Al. The existence and relatively long recharging time of p-type deep accepter-like trap on the recharging process after the change of bias of OLED should be responsible for these phenomena. According to the above mentioned analysis

some measurements were taken to change the concentration of those deep traps in order to improve the optical and electric performance of OLED.

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references

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