Influence of Annealing Temperature on Structure and Optical Properties of  Na-doped ZnO Thin Films Prepared by Sol-gel Method

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Influence of Annealing Temperature on Structure and Optical Properties of Na-doped ZnO Thin Films Prepared by Sol-gel Method

paper | 更新时间：2020-08-12

- Influence of Annealing Temperature on Structure and Optical Properties of Na-doped ZnO Thin Films Prepared by Sol-gel Method
- Chinese Journal of Luminescence Vol. 30, Issue 1, Pages: 81-85(2009)
- 作者机构：
  
  1. 烟台大学光电信息学院
  2. 烟台大学环境与材料工程学院
- 作者简介：
  
  [ "" ]
- 基金信息：
- DOI：
  CLC： O482.31
- Received：08 May 2008，
  
  Revised：02 January 1900，
  
  Published Online：20 February 2009，
  
  Published：20 February 2009
- 稿件说明：
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Influence of Annealing Temperature on Structure and Optical Properties of Na-doped ZnO Thin Films Prepared by Sol-gel Method[J]. Chinese journal of luminescence, 2009, 30(1): 81-85.
DOI：

Influence of Annealing Temperature on Structure and Optical Properties of Na-doped ZnO Thin Films Prepared by Sol-gel Method[J]. Chinese journal of luminescence, 2009, 30(1): 81-85. DOI：

摘要

采用溶胶-凝胶旋涂法在Si(100)衬底上制备Na掺杂ZnO薄膜

退火温度分别为873

973

1 073 K。研究了退火温度对Na掺杂ZnO薄膜形貌、微观结构和光学性能的影响。室温光致发光谱显示

在973 K下退火的样品具有中心位于361 nm处尖锐而强的紫外发光峰

在388

425 nm处各有一个比较弱的紫色和蓝色发光峰

在可见光范围内发光峰的强度很弱。

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references

. Ozgur U, Alivov Ya I, Liu C. A comprehensive review of ZnO materials and devices [J]. J. Appl. Phys., 2005, 98 (4):041301-1-3.

. Klingshim C. The luminescence of ZnO under high one- and two-quantum excitation [J]. Phys. Stat. Sol. B, 1975, 71 (2):547-559.

. Tang Z K, Wong G K, Yu P. Room-temperature ultraviolet laser emission from self-assembled ZnO microcrystallite thin films [J]. Appl. Phys. Lett., 1998, 72 (25):3270-3275.

. Chen Z Q, Yamamoto S, Maekawa M. Postgrowth annealing of defects in ZnO studied by positron annihilation, X-ray diffraction, Rutherford backscattering, cathodoluminescence, and Hall measurements [J]. J. Appl. Phys., 2003, 94 (8):4807-4812.

. Hong Seong Kang, Jeong Seok Kang, Jae Won Kim, et al. Annealing effect on the property of ultraviolet and green emissions of ZnO thin films [J]. J. Appl. Phys., 2004, 95 (3):1246-1250.

. Lee Sang Yeol, Li Y, Lee Jang-Sik, et al. Effects of chemical composition on the optical properties of Zn1-xCd<em>xO thin films [J]. Appl. Phys. Lett., 2004, 85 (2):218-220.

. Matsubara K, Fons P, Iwata K, et al. ZnO transparent conducting films deposited by pulsed laser deposition for solar cell applications [J]. Thin Solid Films, 2003, 431-432 :369-372.

. Satoshi Takeda, Makoto Fukawa. Highly stable hydrogenated gallium-doped zinc oxide thin films grown by DC magnetron sputtering using H2/Ar gas [J]. Thin Solid Films, 2004, 468 (1-2):234-239.

. Zhu K F, Zhang E, Guenther C S. Optimized indium tin oxide contact for organic light emitting diode applications [J]. Thin Solid Films, 2000, 363 (1-2):314-317.

. Rajesh Das, Tapathi Jana, Swati Ray. Degradation studies of transparent conducting oxide: a substrate for microcrystalline silicon thin film solar cells [J]. Solar Energy Materials and Solar Cells, 2005, 86 (2):207-216.

. Xu Xiaoli, Ma Shuyi, Chen Yan, et al. Influence of oxygen partial pressure on the structural and optical properties of ZnO films deposited by radio-frequency magnetron sputtering [J]. Chin. J. Lumin. (发光学报), 2007, 28 (5):730-735 (in Chinese).

. Kim Kwang-Sik, Kim Hyoun Woo. Synthesis of ZnO nanorod on bare Si substrate using metal organic chemical vapor deposition [J]. Phys. B, 2003, 328 (3-4):368-371.

. Liu Xuedong, Gu Shulin, Li Feng, et al. The effect of carrier gas H2 used during MOCVD-growth on the properties of N-doped ZnO [J]. Chin. J. Lumin. (发光学报), 2008, 29 (3):441-446 (in Chinese).

. Michihiro Sano, Kazuhiro Miyamoto, Hiroyuki Kato. Role of hydrogen in molecular beam epitaxy of ZnO [J]. J. Appl. Phys., 2004, 95 (10):5527-5531.

. Ma Y, Du G T, Yang S R, et al. Control of conductivity type in undoped ZnO thin films grown by metalorganic vapor phase epitaxy [J]. J. Appl. Phys., 2004, 95 (11):6268-6272.

. Ji Zhenguo, Liu Kun, Yang Chengxing, et al. Structural, optical and electrical properties of ZnO thin films prepared by reactive deposition [J]. J. Cryst. Growth, 2003, 253 (1-4):246-251.

. Nunes P, Fortunato E, Tonello P, et al. Effect of different dopant elements on the properties of ZnO thin films [J]. Va-cuum, 2002, 64 (3-4):281-285.

. Zhang Liting, Wei Ling, Zhang Yang, et al. Microstructure and photoluminescence properties of ZnO ∶ V thin films and effect of post-annealing [J]. Chin. J. Lumin. (发光学报), 2007, 28 (4):561-565 (in Chinese).

. Lidia Armelao, Monica Fabrizio, Stefano Gialaneela, et al. Sol-gel synthesis and characterisation of ZnO-based nano-systems [J]. Thin Solid Flims, 2001, 394 (1-2):90-95.

. Lorenz C, Emmerling A, Fricke J, et al. Aerogels containing strongly photoluminescing zinc oxide nanocrystals [J]. J. Non-Crystalline Solids, 1998, 238 (1-2):1-5.

. Chakrabarti S, Das D, Ganguli D, et al. Tailoring of room temperature excitonic luminescence in sol-gel zinc oxide-silica nanocomposite films [J]. Thin Solid Films, 2003, 441 (1-2):228-237.

. Srinivasan G, Kumar J. Optical and structural characterisation of zinc oxide thin films prepared by sol-gel process [J]. Crystal Research Technology, 2006, 41 (9):893-896.

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