Effect of Si Nanocrystals Size on Photoluminescence Intensity of Si Nanocrystals Embedded in Si/SiO<SUB>2</SUB> Superlattices after Ce<SUP>3+</SUP> Implantation

DU Yu-fan; YI Li-xin; WANG Shen-wei; WU Yang

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Effect of Si Nanocrystals Size on Photoluminescence Intensity of Si Nanocrystals Embedded in Si/SiO₂ Superlattices after Ce³⁺ Implantation

paper | 更新时间：2020-08-12

- Effect of Si Nanocrystals Size on Photoluminescence Intensity of Si Nanocrystals Embedded in Si/SiO₂ Superlattices after Ce³⁺ Implantation
- Chinese Journal of Luminescence Vol. 30, Issue 3, Pages: 417-420(2009)
- 作者机构：
  
  北京交通大学光电子技术研究所, 发光与光信息技术教育部重点实验室北京,100044
- 作者简介：
- 基金信息：
- DOI：
  CLC： O482.31
- Received：25 December 2008，
  
  Revised：1900-1-2，
  
  Published Online：30 June 2009，
  
  Published：30 June 2009
- 稿件说明：
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DU Yu-fan, YI Li-xin, WANG Shen-wei, et al. Effect of Si Nanocrystals Size on Photoluminescence Intensity of Si Nanocrystals Embedded in Si/SiO₂ Superlattices after Ce³⁺ Implantation[J]. Chinese Journal of Luminescence, 2009, 30(3): 417-420.
DOI：

DU Yu-fan, YI Li-xin, WANG Shen-wei, et al. Effect of Si Nanocrystals Size on Photoluminescence Intensity of Si Nanocrystals Embedded in Si/SiO₂ Superlattices after Ce³⁺ Implantation[J]. Chinese Journal of Luminescence, 2009, 30(3): 417-420. DOI：

摘要

通过电子束蒸发方法以及高温退火处理

得到nc-Si/SiO

超晶格。将样品分别注入剂量为2.0×10

-2

和2.0×10

-2

的Ce

再对其进行二次退火处理

获得多组样品。通过对样品光致发光光谱的分析发现

样品发光强度的变化不仅受到Ce

注入剂量的影响

而且也受到nc-Si颗粒大小的影响。在相同注入计量和相同的二次退火处理温度下

nc-Si颗粒较大的样品经Ce

注入后其发光强度增强较为明显。

Abstract

In this paper

SiO/SiO

superlattices samples were prepared on Si substrates by electron beam evaporation

and the thicknesses of SiO layers are 2 nm and 4 nm

4 nm for all the SiO

layers. The samples were annealed in nitrogen atmosphere at high temperature subsequently. And then

with a dose of 2.0×10

-2

and 2.0×10

-2

respectively was implanted into these samples with formed Si nanocrystals. After Ce

doped

the samples were re-annealing at 600 ℃. The photoluminescence (PL) spectra were observed by the fluorescence spectrometry. The PL spectra showed that the PL intensities of samples were not only dependent on the re-annealing temperature and the dose of Ce

but also dependent on the size of nc-Si. The experiment results proved that when the size of nc-Si is 4 nm; the effect of energy transfer between Ce

and nc-Si is more distinct.

关键词

Keywords

references

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Effect of Si Nanocrystals Size on Photoluminescence Intensity of Si Nanocrystals Embedded in Si/SiO2 Superlattices after Ce3+ Implantation

DOI：

摘要

Abstract

关键词

Keywords

references

Effect of Si Nanocrystals Size on Photoluminescence Intensity of Si Nanocrystals Embedded in Si/SiO₂ Superlattices after Ce³⁺ Implantation